bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Host Controlled Analog Front End for 3-Series to 6-Series Cell Li-Ion/Li-Polymer Battery Protection and Gas Gauging Applications Check for Samples: bq76925 FEATURES DESCRIPTION • The bq76925 Host controlled analog front end (AFE) is part of a complete pack monitoring, balancing and protection system for 3-, 4-, 5-, or 6-series cell Li-Ion and Li-Polymer batteries. The bq76925 allows a Host controller to easily monitor individual cell voltages, pack current and temperature. This information may be used by the Host to determine unsafe or faulty operating conditions such as overvoltage, undervoltage, over-temperature and overcurrent, as well as cell imbalance, state of charge and state of health conditions. 1 • • • • • • • • • • Analog Interface for Host cell Measurement – Cell Input MUX, Level Shifter, and Scaler – 1.5-/ 3.0-V Low-Drift, Calibrated Reference Allows Accurate Analog to Digital Conversions Analog Interface for Host Current Measurement – Variable Gain Current Sense Amplifier Capable of Operation with 1-mΩ Sense Resistor Switchable Thermistor Bias output for Host Temperature Measurements Overcurrent Comparator with Dynamically Adjustable Threshold – Alerts Host to Potential Overcurrent Faults – May be used to Wake up Host on Load Connect Integrated Cell Balancing FETs – Individual Host Control – 50 mA per-cell Balancing Current Supports Cell Sense-line Open Wire Detection Integrated 3.3-V Regulator for Powering Micro-controller and/or LEDs I2C Interface for Host Communications – Optional Packet CRC for Robust Operation Supply Voltage Range From 4.2 to 26.4 V Low Power Consumption – 40 µA Typical in Normal Mode – 1.5 µA Maximum in Sleep Mode 20-pin TSSOP or 24-pin QFN Package APPLICATIONS • Primary Protection in Li-Ion Battery Packs – Cordless Power Tools – Light Electric Vehicles (E-Bike, Scooter, etc.) – UPS Systems – Medical Equipment – Portable Test Equipment Cell input voltages are level-shifted, multiplexed, scaled, and output for measurement by a Host ADC. A low-drift calibrated reference voltage is provided on a dedicated pin to enable accurate measurements. The voltage across an external sense resistor is amplified and output to a Host ADC for both charge and discharge current measurements. Two gain settings enable operation with a variety of sense resistor values over a wide range of pack currents. To enable temperature measurements by the Host, the AFE provides a separate output pin for biasing an external thermistor network. This output can be switched on and off under Host control to minimize power consumption. The bq76925 includes a comparator with a dynamically selectable threshold for monitoring current. The comparator result is driven through an open-drain output to alert the host when the threshold is exceeded. This feature can be used to wake up the Host on connection of the load, or to alert the Host to a potential fault condition. The bq76925 integrates cell balancing FETs that are fully controlled by the Host. The balancing current is set by external resistors up to a maximum value of 50 mA. These same FETs may be utilized in conjunction with cell voltage measurements to detect an open wire on a cell sense-line. The Host communicates with the AFE via an I2C interface. A packet CRC may optionally be used to ensure robust operation. The device may be put into a low-current sleep mode via the I2C interface and awakened by pulling up the ALERT pin. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011, Texas Instruments Incorporated bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. PIN DIAGRAMS VCTL NC NC V3P3 SCL RGE PACKAGE (TOP VIEW) BAT PW PACKAGE (TOP VIEW) 24 23 22 19 VCTL 1 20 V3P3 BAT VC6 2 19 3 18 SCL SDA 18 4 17 VREF VC6 VC5 1 VC5 2 17 SDA VREF VC4 5 16 VTB VC4 3 16 VTB VC3 VC2 6 15 VC3 VC2 15 14 VCOUT VIOUT 4 7 5 14 VCOUT VIOUT VC1 8 13 ALERT VC1 6 13 ALERT VC0 VSS 9 12 10 11 SENSEP SENSEN 20 bq76925 9 10 11 12 NC NC SENSEN SENSEP 8 VSS 7 VC0 bq76925 21 PIN FUNCTIONS PIN NO. (1) 2 NAME TYPE 23 VCTL Output 3.3-V Regulator control voltage (1) 2 24 BAT Power Supply voltage, tied to most positive cell 3 1 VC6 Input Sense voltage for most positive cell 4 2 VC5 Input Sense voltage for second most positive cell 5 3 VC4 Input Sense voltage for third most positive cell 6 4 VC3 Input Sense voltage for fourth most positive cell 7 5 VC2 Input Sense voltage for fifth most positive cell 8 6 VC1 Input Sense voltage for least positive cell 9 7 VC0 Input Sense voltage for negative end of cell stack 10 8 VSS Power 9 NC NA No Connection (leave open) 10 NC NA No Connection (leave open) 11 11 SENSEN Input Negative current sense 12 12 SENSEP Input Positive current sense 13 13 ALERT Output Overcurrent alert (open drain) 14 14 VIOUT Output Current measurement voltage 15 15 VCOUT Output Cell measurement voltage 16 16 VTB Output Bias voltage for thermistor network 17 17 VREF Output Reference voltage for ADC 18 18 SDA Input / Output I2C Data (open drain) 19 19 SCL Input I2C Clock (open drain) 20 20 V3P3 Output 21 NC NA No Connection (leave open) 22 NC NA No Connection (leave open) TSSOP QFN 1 DESCRIPTION Ground 3.3-V Regulator When a bypass FET is used to supply the regulated 3.3-V load current, VCTL automatically adjusts to keep V3P3 = 3.3 V. If VCTL is tied to BAT, the load current is supplied through V3P3. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com FUNCTIONAL BLOCK DIAGRAM PACK+ Bypass FET (optional) Hold-up circuit (optional) RBAT 3.3 V µC / LED Supply RVCTL DBAT BAT VCTL VREG ZBAT CBAT POR V3P3 VC6 CV3P3 RIN + - CIN Cell Select VC5 I2C Bal Select SCL RIN + I2C Interface VC4 RIN Cell MUX + - CIN Level Shift VC3 RIN Balance Control + - CIN NTC Bias Switch Thresh Select CIN VCOUT Select EE - SDA REGS Ref Select 1.5 / 3.0 V REF ADC Reference VREF CREF REF×0.5 REF×0.85 VC2 ADC Ch 1 Temp VTB RIN RTH RNTC + CTH - CIN + Amp – VC1 RIN + - CIN ADC Ch 2 Cell Voltage VCOUT COUT Gain = 0.3, 0.6 CIN ADC Ch 3 Pack Current VIOUT VC0 RIN VSS Shunt Select COUT Gain Select + Amp – SENSEN RSENSE RSENSEN Wakeup Detect Overcurrent Alert ALERT Gain = 4, 8 Output Range = 1 V, 2 V CSENSE + Amp – SENSEP RSENSEP Gain = 1 Polarity Select ITHRESH + Comp – 25,50,75,100,…,400 mV bq76925 PACK– ORDERING INFORMATION (1) TA –25°C to 85°C (1) (2) PACKAGE PART NUMBER (2) 20-Pin PW bq76925PW 24-Pin RGE bq76925RGE For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site at www.ti.com. The PW and RGE package options are also available taped and reeled. Add an R suffix to the device type (e.g., bq76925PWR for 2000 units per reel). See applications section of data sheet for layout information. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 3 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) RANGE (2) VBAT Supply voltage range Input voltage range VI MIN MAX UNITS BAT –0.3 36 V Cell input differential, VCn to VCn+1, n = 0 to 5 –0.3 9 Cell input, VCn, n = 1 to 6 –0.3 (6 × n) BAT to VC6 differential –10 10 –3 3 –3 3 VC0 (3) SENSEP, SENSEN Output voltage range VO SCL, SDA –0.3 6 VCOUT, VIOUT, VREF –0.3 3.6 VTB, V3P3 –0.3 7 ALERT –0.3 30 VCTL –0.3 36 V V ICB Cell balancing current 70 mA IIN Cell input current –25 70 mA TSTG Storage temperature range –65 150 °C (1) (2) (3) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only. Functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. All voltages are relative to VSS, except “Cell input differential.” Negative voltage swings on VC0 in the absolute maximum range can cause unwanted circuit behavior and should be avoided. THERMAL INFORMATION bq76925 THERMAL METRIC (1) TSSOP (PW PACKAGE) QFN (RGE PACKAGE) (20) PINS (24) PINS θJA Junction-to-ambient thermal resistance 97.5 36.0 θJC (top) Junction-to-case (top) thermal resistance 31.7 38.6 θJB Junction-to-board thermal resistance 48.4 14.0 ψJT Junction-to-top characterization parameter 1.5 0.6 ψJB Junction-to-board characterization parameter 47.9 14.0 θJC (bottom) Junction-to-case (bottom) thermal resistance n/a 4.6 (1) 4 UNITS °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com RECOMMENDED OPERATING CONDITIONS (1) MIN Supply voltage range MAX UNIT BAT 4.2 TYP 26.4 V Cell input differential, VCn to VCn+1, n = 0 to 5 1.4 4.4 V 4.4 × n V 8 V –125 375 mV 0 5.5 V 5.5 V 0 26.4 V 0 V3P3 + 0.2 V Cell input, VCn, n = 1 to 6 BAT to VC6 differential VIN Input voltage range SENSEP SCL, SDA V3P3 Backfeeding (2) ALERT Wakeup function VCOUT, VIOUT VREF VOUT Output voltage range ALERT RBAT BAT filter resistance CBAT BAT filter capacitance RIN External cell input resistance CIN External cell input capacitance RSENSEN RSENSEP Current sense input filter resistance CSENSE Current sense input filter capacitance RVCTL VCTL pullup resistance CV3P3 V3P3 output capacitance CREF VREF output capacitance COUT ADC channel output capacitance TOPR TFUNC (1) (2) (3) V REFSEL = 0 1.5 V REFSEL = 1 3.0 V Regulating 3.3 5.5 VCTL Cell balancing current 0 VTB V3P3 ICB –8 VC0, SENSEN Alert function V V 0.8 26.4 0 5.5 V 0 50 mA 100 Ω 10 µF (3) Ω 100 0.1 Without external bypass transistor 1 10 µF 1K Ω 0.1 µF 0 With external bypass transistor V Ω 200K Without external bypass transistor 4.7 With external bypass transistor 1.0 µF µF 1.0 µF VCOUT 0.1 VIOUT 470 2000 pF Operating free-air temperature –25 85 °C Functional free-air temperature –40 100 °C All voltages are relative to VSS, except “Cell input differential.” Internal 3.3-V regulator may be overridden (i.e. backfed) by applying an external voltage larger than the regulator voltage. RIN,MIN = 0.5 × (VCnMAX / 50 mA) if cell balancing used so that maximum recommended cell balancing current is not exceeded. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 5 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com ELECTRICAL CHARACTERISTICS BAT = 4.2 to 26.4 V, VCn = 1.4 to 4.4, TA = –25°C to 85°C Typical values stated where TA = 25°C and BAT= 21.6 V (unless otherwise noted) Supply Current PARAMETER TYP MAX UNIT Normal mode supply current All device functions enabled All pins unloaded SDA and SCL high 40 48 µA Standby mode 1 supply current V3P3 and overcurrent monitor enabled All pins unloaded All other device functions disabled SDA and SCL high 14 17 µA Standby mode 2 supply current V3P3 enabled All pins unloaded All device functions disabled SDA and SCL high 12 14 V Sleep mode supply current V3P3 disabled All pins unloaded All device functions disabled SDA and SCL low 1.0 1.5 µA 2.4 2.7 IVCn Input current for selected cell All cell voltages equal Cell balancing disabled Open cell detection disabled during cell voltage monitoring ∆IVCn Cell to cell input current difference All cell voltages equal Cell balancing disabled Open cell detection disabled IDD1 IDD2 IDD3 IDD4 TEST CONDITION MIN n=6 n=1–5 < 0.5 µA < 0.2 µA Internal Power Control (Startup and Shutdown) PARAMETER VPOR Power on reset voltage TEST CONDITION Measured at BAT pin MIN TYP MAX UNIT Initial BAT < 1.4 VBAT rising (1) 4.3 4.5 4.7 V Initial BAT > 1.4 VBAT rising (1) 6.5 7.0 7.5 V 3.6 V 1 ms 0.8 2 V 1 5 μs 1 ms VSHUT Shutdown voltage (2) Measured at BAT pin, BAT falling tPOR Time delay after POR before I2C comms allowed CV3P3 = 4.7 µF VWAKE Wakeup voltage Measured at ALERT pin tWAKE_PLS Wakeup signal pulse width tWAKE_DLY Time delay after wakeup before I2C comms allowed (1) (2) 6 CV3P3 = 4.7 µF Initial power up will start with BAT < 1.4 V, however if BAT falls below VSHUT after rising above VPOR, the power on threshold depends on the minimum level reached by BAT after falling below VSHUT Following POR, the device will operate down to this voltage. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com 3.3 V Voltage Regulator PARAMETER TEST CONDITION MIN TYP MAX UNIT 26.4 V 3.4 V 3.3 V VOLTAGE REGULATOR VCTL Regulator control voltage VV3P3 Regulator output IREG V3P3 output current ISC (1) (2) Measured at VCTL, V3P3 regulating 3.3 Measured at V3P3, IREG = 0 to 4 mA, BAT = 4.2 to 26.4 V 3.2 V3P3 short circuit current limit V3P3 = 0.0 V 10.0 VTB Thermistor bias voltage Measured at VTB, ITB = 0 ITB Thermistor bias current RTB Thermistor bias internal resistance RDS,ON for internal FET switch, ITB = 1.0 mA (1) (2) 3.3 4.0 mA 17.0 mA 1.0 mA 130 Ω VV3P3 90 V When a bypass FET is used to supply the regulated 3.3V load current, VCTL automatically adjusts to keep V3P3 = 3.3 V. Note that VCTL,MIN and the FET VGS will determine the minimum BAT voltage at which the bypass FET will operate. If VCTL is tied to BAT, the load current is supplied through V3P3. Voltage Reference PARAMETER TEST CONDITION MIN TYP MAX UNIT V VOLTAGE REFERENCE Before gain correction, TA = 25°C VREF VREF_CAL Voltage reference output Reference calibration voltage After gain correction, TA = 25°C Measured at VCOUT ∆VREF Voltage reference tolerance TA = 0 – 50°C IREF VREF output current (1) (1) REF_SEL = 0 1.44 1.56 REF_SEL = 1 2.88 3.12 REF_SEL = 0 –0.1% 1.5 +0.1% REF_SEL = 1 –0.1% 3.0 +0.1% VCOUT_SEL = 2 –0.9% 0.5 × VREF +0.9% VCOUT_SEL = 3 –0.5% 0.85 × +0.5% VREF (0.85 × VREF) – (0.5 × VREF) –0.3% 0.35 × +0.3% VREF –40 V V 40 ppm/ °C 10 µA Gain correction factor determined at final test and stored in non-volatile storage. Gain correction is applied by Host controller. Cell Voltage Amplifier PARAMETER TEST CONDITION GVCOUT Cell voltage amplifier gain Measured from VCn to VCOUT OVCOUT Cell voltage amplifier offset Measured from VCn to VCOUT VCOUT Cell voltage amp output range (1) Measured at VCOUT, VCn = 5.0 V MIN TYP MAX REF_SEL = 0 –1.6% 0.3 1.5% REF_SEL = 1 –1.6% 0.6 1.5% –16 15 mV REF_SEL = 0 1.47 1.5 1.53 V REF_SEL = 1 2.94 3.0 3.06 V Measured at VCOUT, VCn = 0.0 V ∆VCOUT Cell voltage amplifier accuracy VCn = 1.4 V to 4.4 V, After correction, (2) Measured at VCOUT (3) REF_SEL = 1 (4) UNIT 0.0 V TA = 25°C –3 3 TA = 0°C to 50°C –5 5 TA = –25°C to 85°C –8 8 mV IVCOUT VCOUT output current (5) 10 µA tVCOUT Delay from VCn select to VCOUT Output step of 200 mV. COUT = 0.1 µF 100 µs (1) (2) (3) (4) (5) For VCn values greater than 5.0 V, VCOUT clamps at approximately V3P3. Correction factor determined at final test and stored in non-volatile storage. Correction is applied by Host controller. Output referred. Input referred accuracy is calculated as ∆VCOUT / GVCOUT (e.g. 3 / 0.6 = 5). Correction factors are calibrated for gain of 0.6. Tolerance at gain of 0.3 is approximately doubled. Contact TI for information on devices calibrated to a gain of 0.3. Max DC load for specified accuracy. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 7 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Current Sense Amplifier PARAMETER GVIOUT VIIN TEST CONDITION Current sense amplifier gain Measured from SENSEN, SENSEP to VIOUT Current sense amp input range Measured from SENSEN, SENSEP to VSS Current sense amp output range Measured at VIOUT Zero current output Measured at VIOUT SENSEP = SENSEN VIOUT ∆VIOUT Current amplifier accuracy IVIOUT VIOUT output current (1) MIN TYP MAX UNIT –125 375 mV REF_SEL = 0 0.25 1.25 V REF_SEL = 1 0.5 2.5 V I_GAIN = 0 4 I_GAIN = 1 8 REF_SEL = 0 1.0 REF_SEL = 1 2.0 V V –1% 1% (1) 10 µA MAX UNIT 5 V Max DC load for specified accuracy Over Current Comparator PARAMETER VBAT_COMP TEST CONDITION TYP Measured from SENSEP to comparator input GVCOMP Comparator amplifier gain VITRIP Current comparator trip threshold (2) 1 25 400 mV VITRIP = 25 mV –6 6 mV VITRIP > 25 mV –10% 10% V 0.4 V ∆VITRIP Current comparator accuracy VOL_ALERT ALERT Output Low Logic VOH_ALERT ALERT Output High Logic IALERT ALERT Pulldown current ALERT = 0.4 V, Output driving low IALERT_LKG ALERT Leakage current ALERT = 5.0 V, Output high-Z tOC Comparator response time (1) (2) (3) MIN Minimum VBAT for comparator operation (1) IALERT = 1 mA (3) NA NA NA 1 mA <1 μA 100 µs The Over Current Comparator is not guaranteed to work when VBAT is below this voltage. Trip threshold selectable from 25, 50, 75, 100, 125, 150, 175, 200, 225, 250, 275, 300, 325, 350, 375 or 400 mV This parameter NA because output is open drain. Internal Temperature Measurement PARAMETER TEST CONDITION VTEMP_INT Internal temperature voltage ∆VTEMP_INT Internal temperature voltage sensitivity MIN Measured at VCOUT, TINT = 25°C 1.15 TYP MAX 1.2 1.25 –4.4 UNIT V mV / ºC Cell Balancing and Open Cell Detection PARAMETER RBAL (1) 8 Cell balancing internal resistance (1) TEST CONDITION MIN TYP MAX RDS,ON for VC1 internal FET switch, VCn = 3.6 V 1 3 5 RDS,ON for internal VC2 to VC6 FET switch, VCn = 3.6 V 3 5.5 8 UNIT Ω Balancing current is not internally limited. The cell balancing operation is completely controlled by the Host processor, no automatic function or time-out is included in the part. Care must be used to ensure that balancing current through the part is below the maximum power dissipation limit. The Host algorithm is responsible for limiting thermal dissipation to package ratings. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com I2C Compatible Interface DC PARAMETERS MIN VIL Input Low Logic Threshold VIH Input High Logic Threshold VOL Output Low Logic Drive VOH Output High Logic Drive (Not applicable due to open-drain outputs) ILKG I2C Pin Leakage TYP MAX UNIT 0.6 V 2.8 V IOL = 1 mA 0.20 IOL = 2.5 mA V 0.40 N/A Pin = 5.0 V, Output in high-Z V <1 µA AC PARAMETERS tr SCL, SDA Rise Time 1000 ns tf SCL, SDA Fall Time 300 ns tw(H) SCL Pulse Width High 4.0 µs tw(L) SCL Pulse Width Low 4.7 µs tsu(STA) Setup time for START condition 4.7 µs th(STA) START condition hold time after which first clock pulse is generated 4.0 µs tsu(DAT) Data setup time 250 ns th(DAT) Data hold time 0 (1) µs tsu(STOP) Setup time for STOP condition 4.0 µs tsu(BUF) Time the bus must be free before new transmission can start 4.7 tV Clock Low to Data Out Valid th(CH) Data Out Hold Time After Clock Low 0 fSCL Clock Frequency 0 tWAKE I2C ready after transition to Wake Mode (1) µs 900 ns ns 100 kHz 2.5 ms Devices must provide internal hold time of at least 300 ns for the SDA signal to bridge the undefined region of the falling edge of SCL. SCL SDA SCL SDA SCL SDA Figure 1. I2C Timing Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 9 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com OPERATIONAL OVERVIEW INTRODUCTION The bq76925 Host controlled analog front end (AFE) is part of a complete pack monitoring, balancing and protection system for 3 to 6 series cell Lithium batteries. The bq76925 allows a Host controller to easily monitor individual cell voltages, pack current and temperature. This information can be used by the Host to detect and act on a fault condition caused when one or more of these parameters exceed the limits of the application. In addition, this information may be used by the Host to determine end-of-charge, end-of-discharge and other gas-gauging and state of health conditions. PACK+ BAT VCTL AVCC V3P3 DVCC VC6 + VC5 SCL SCL VC4 SDA SDA P1.5 COMM + - µController + - VeREF+ VREF VC3 Example: MSP430x20x2 A0 or equivalent bq76925 + - VTB VC2 RTH RNTC + VC1 VCOUT A1 VC0 VIOUT A2 + VeREFAVSS VSS DVSS SENSEP Note: Some components omitted for clarity. P2.7 NMI ALERT SENSEN P2.6 RSENSE FET Driver Circuits PACK- Example only. Not required. Figure 2. Example of bq76925 With Host Controller 10 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com POWER MODES Power On Reset (POR) When initially powering up the bq76925, the voltage on the BAT pin must exceed VPOR (4.7 V max) before the device will turn on. Following this, the device will remain operational as long as the voltage on BAT remains above VSHUT (3.6 V max). If the BAT voltage falls below VSHUT the device will shut down. Recovery from shutdown occurs when BAT rises back above the VPOR threshold and is equivalent to a POR. The VPOR threshold following a shutdown depends on the minimum level reached by BAT after crossing below VSHUT. If BAT does not fall below ~1.4 V, a higher VPOR (7.5 V max) applies. This is illustrated in Figure 3. VBAT VPOR Initial BAT > 1.4 V VPOR Initial BAT < 1.4 V VSHUT 1.4 V OFF ON OFF ON Figure 3. Power On State vs VBAT Following a power on reset, all volatile registers assume their default state. Therefore, care must be taken that transients on the BAT pin during normal operation do not fall below VSHUT. To avoid this condition in systems subject to extreme transients or brown-outs, a hold-up circuit such as the one shown in the functional diagram is recommended. When a hold-up circuit is used, care must be taken to observe the BAT to VC6 maximum ratings. Standby Individual device functions such as cell translator, current amplifier, reference and current comparator can be enabled and disabled under Host control by writing to the POWER_CTL register. This feature can be used to save power by disabling functions that are unused. In the minimum power standby mode, all device functions can be turned off leaving only the 3.3 V regulator active. Sleep In addition to standby, a sleep mode is provided by which the Host can order the bq76925 to shutdown all internal circuitry including the LDO regulator. In this mode the device will consume a minimal amount of current (< 1.5 μA) due only to leakage and powering of the wake-up detection circuitry. Sleep mode is entered by writing a ‘1’ to the SLEEP bit in the POWER_CTL register. In sleep mode, all functions including the LDO are disabled. Wake-up is achieved by pulling up the ALERT pin; however the wake-up circuitry is not armed until the voltage at V3P3 drops to ~0 V. To facilitate the discharge of V3P3, an internal 3-kΩ pull-down is connected from V3P3 to VSS during the time that sleep mode is active. Once V3P3 is discharged, the bq76925 may be awakened by pulling the ALERT pin above VWAKE (2 V max). Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 11 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com The SLEEP_DIS bit in the POWER_CTL register acts as an override to the sleep function. When SLEEP_DIS is set to ‘1’, writing the SLEEP bit has no effect (i.e. sleep mode cannot be entered). If SLEEP_DIS is set after sleep mode has been entered, the device will immediately exit sleep mode. This scenario can arise if SLEEP_DIS is set after SLEEP is set, but before V3P3 has discharged below a valid operating voltage. This scenario can also occur if the V3P3 pin is held up by external circuitry and not allowed to fully discharge. If the over-current alert function is not used, the ALERT pin can function as a dedicated wake-up pin. Otherwise, the ALERT pin will normally be pulled up to the LDO voltage, so care must be taken in the system design so that the wake-up signal does not interfere with proper operation of the regulator. Internal LDO Voltage Regulator The bq76925 provides a regulated 3.3 V supply voltage on the V3P3 pin for operating the device’s internal logic and interface circuitry. This regulator may also be used to directly power an external microcontroller or other external circuitry up to a limit of 4 mA load current. In this configuration, the VCTL pin is tied directly to the BAT pin. For applications requiring more than 4 mA, an external bypass transistor may be used to supply the load current. In this configuration the VCTL pin is tied to the gate of the bypass FET. These two configurations are show in Figure 4. PACK + PACK+ R VCTL R BAT BAT CBAT 3.3 V R BAT BAT VREG VCTL C BAT VREG V3P3 V3P3 C V3P3 bq76925 a) Regulator load supplied through bq76925 VCTL bq76925 C V3P3 b) Regulator load supplied through external pass device Figure 4. LDO Regulator Configurations For the configuration of Figure 4B), a high gain bypass device should be used to ensure stability. A bipolar PNP or p-channel FET bypass device may be used. Contact TI for recommendations. The LDO regulator may be overridden (i.e., back-fed) by an external supply voltage greater than the regulated voltage on V3P3. In this configuration the bq76925 internal logic and interface circuitry will operate from the external supply and the internal 3.3 V regulator will supply no load current. ADC Interface The bq76925 is designed to interface to a multi-channel analog-to-digital converter (ADC) located in an external Host controller, such as an MSP430 Microcontroller or equivalent. Three outputs provide voltage, current and temperature information for measurement by the Host. In addition, the bq76925 includes a low-drift calibrated 1.5 / 3 V reference that is output on a dedicated pin for use as the reference input to the ADC. The gain and offset characteristics of the bq76925 are measured during factory test and stored in non-volatile memory as correction factors. The Host reads these correction factors and applies them to the ADC conversion results in order to achieve high measurement accuracy. In addition, the precise voltage reference of the bq76925 can be used to calibrate out the gain and offset of the Host ADC. Reference Voltage The bq76925 outputs a stable reference voltage for use by the Host ADC. A nominal voltage of 1.5 V or 3 V is selected via the REF_SEL bit in the CONFIG_2 register. The reference voltage is very stable across temperature, but the initial voltage may vary by ±4%. The variation from nominal is manifested as a gain error in the ADC conversion result. To correct for this error, offset and gain correction factors are determined at final test and stored in the non-volatile registers VREF_CAL and VREF_CAL_EXT. The Host reads the correction factors and applies them to the nominal reference voltage to arrive at the actual reference voltage as described under Cell Voltage Monitoring. After gain correction, the tolerance of the reference will be within ±0.1%. 12 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Host ADC Calibration All analog to digital converters have inherent gain and offset errors which adversely affect measurement accuracy. Some microcontrollers may be characterized by the manufacturer and shipped with ADC gain and offset information stored on-chip. It is also possible for such characterization to be done by the end-user on loose devices prior to PCB assembly, or as a part of the assembled PCB test. For applications where such ADC characterization is not provided or is not practical, the bq76925 provides a means for in-situ calibration of the Host ADC. Through setting of the VCOUT_SEL bits in the CELL_CTL register two scaled versions of the reference voltage, 0.5 × VREF and 0.85 × VREF, can be selected for output on the VCOUT pin for measurement by the Host ADC. Measuring both scaled voltages enables the Host to do a two-point calibration of the ADC and compensate for the ADC offset and gain in all subsequent ADC measurement results as shown in Figure 5. Note that the calibration accuracy will be limited by the tolerance of the scaled reference voltage output so that use of this method may not be effective. For these cases, it is recommended to use a higher accuracy source for the two-point calibration shown in Figure 5. VOUT Slope = Actual gain = G’ Actual transfer curve: VADC,ACT = G’ × VIN + VOFFSET Ideal transfer curve: VADC,IDEAL = VIN Corrected result: VADC,COR = (VADC,ACT – VOFFSET) ÷ G’ Slope = Ideal gain = 1 VOFFSET VIN VREF × 0.5 VREF × 0.85 Figure 5. Host ADC Calibration Using VREF Cell Voltage Monitoring The cell voltage monitoring circuits include an input level-shifter, multiplexer (MUX) and scaling amplifier. The Host selects one VCn cell input for measurement by setting the VCOUT_SEL and CELL_SEL bits in the CELL_CTL register. The scaling factor is set by the REF_SEL bit in the CONFIG_2 register. The selected cell input is level shifted to VSS reference, scaled by a nominal gain GVCOUT = 0.3 (REF_SEL = 0) or 0.6 (REF_SEL = 1) and output on the VCOUT pin for measurement by the Host ADC. Similar to the reference voltage, gain and offset correction factors are determined at final test for each individual cell input and stored in non-volatile registers VCn_CAL (n = 1-6) and VC_CAL_EXT_m (m = 1-2). These factors are read by the Host and applied to the ADC voltage measurement results in order to obtain the specified accuracy. The cell voltage offset and gain correction factors are stored as 5-bit signed integers in 2’s complement format. The most significant bits (VCn_OC_4, VCn_GC_4) are stored separately and must be concatenated with the least significant bits (VCn_OFFSET_CORR, VCn_GAIN_CORR). The reference voltage offset and gain correction factors are stored respectively as a 6-bit and 5-bit signed integer in 2’s complement format. As with the cell voltage correction factors, the most significant bits (VREF_OC_5, VREF_OC_4, VREF_GC_4) are stored separately and must be concatenated with the least significant bits (VREF_OFFSET_CORR, VREF_GAIN_CORR). Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 13 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com The actual cell voltage (VCn) is calculated from the measured voltage (VCOUT) as shown in the following equations: ADC Count VCOUT = × VREFNOMINAL Full Scale Count VCn = VCOUT ´ GCV REF + OCVCOUT G VCO UT × (1 + GC VCOUT ) (1) spacer spacer GCVCOUT = éë(VCn_GC_4 << 4 ) + VCn_GAIN_CORR ùû ´ 0.001, OCVCOUT = ëé(VCn_OC_4 << 4 ) + VCn_OFFSET_CORR ûù ´ 0.001, GCVREF = (1 + éë(VREF_GC_4 << 4 ) + VREF_GAIN_CORR ùû ´ 0.001) é(VREF_OC_5 << 5 ) + (VREF_OC_4 << 4 ) + VREF_OFFSET_CORR ûù ´ 0.001 + ë VREFNOMINAL (2) Cell Amplifier Headroom Under Extreme Cell Imbalance For cell voltages across (VC1 – VC0) that are less than ~2.64 V, extreme cell voltage imbalances between (VC1 – VC0) and (VC2 – VC1) can lead to a loss of gain in the (VC2 – VC1) amplifier. The cell imbalance at which the loss of gain occurs is determined by the following equation: (VC2 - VC1) ´ 0.6 > (VC1 - VSS) (3) Assuming VC0 = VSS, it can be seen that when (VC1 – VC0) > 2.64 volts, the voltage across (VC2 – VC1) can range up to the limit of 4.4 V without any loss of gain. At the minimum value of (VC1 – VC0) = 1.4 V, an imbalance of more than 900 mV is tolerated before any loss of gain in the (VC2 – VC1) amplifier. For higher values of (VC1 – VC0), increasingly large imbalances are tolerated. For example, when (VC1 – VC0) = 2.0 V, an imbalance up to 1.33 V (i.e. (VC2 – VC1) = 3.33 V) results in no degradation of amplifier performance. Normally, cell imbalances greater than 900 mV will signal a faulty condition of the battery pack and its use should be discontinued. The loss of gain on the second cell input does not affect the ability of the system to detect this condition. The gain fall-off is gradual so that the measured imbalance will never be less than the critical imbalance set by Equation 3. Therefore if the measured (VC2 – VC1) is greater than (VC1 – VSS) / 0.6, a severe imbalance is detected and the pack should enter a fault state which prevents further use. In this severe cell imbalance condition comparisons of the measured (VC2 – VC1) to any over-voltage limits will be optimistic due to the reduced gain in the amplifier, further emphasizing the need to enter a fault state. Cell Amplifier Headroom Under BAT Voltage Drop Voltage differences between BAT and the top cell potential come from two sources as shown in Figure 6: V3P3 regulator current that flows through the RBAT filter resistor, and the voltage drop in the series diode DBAT of the hold-up circuit. These effects cause BAT to be less than the top cell voltage measured by the cell amplifier. 14 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com PACK+ RBAT DBAT Z BAT BAT VCTL VREG CBAT V3P3 CV3P3 VC6 + - bq76925 Figure 6. Sources of Voltage Drop Affecting the BAT Pin The top cell amplifier (VC6 – VC5) is designed to measure an input voltage down to 1.4 V with a difference between the BAT and VC6 pin up to 1.2 V (i.e. BAT can be 1.2 V lower than VC6). However, in applications with fewer than 6 cells, the upper cell inputs are typically shorted to the top cell input. For example, in a 5-cell application VC6 and VC5 would be shorted together and the (VC5 – VC4) amplifier would measure the top cell voltage. The case is similar for 4- and 3-cell applications. For these cases when using the (VC5 – VC4), (VC4 –VC3) or (VC3 – VC2) amplifier to measure the top cell, the difference between BAT and the top cell amplifier must be less than 240 mV in order to measure cell voltages down to 1.4 V. Note that at higher cell input voltages the top amplifier tolerates a greater difference. For example, in a 5-cell configuration (VC6 and VC5 tied together) the (VC5 – VC4) amplifier is able to measure down to a 1.7 V input with a 600 mV difference between VC5 and BAT. Accordingly, in systems with fewer than 6 cells it is important in system design to minimize RBAT and to use a Schottky type diode for DBAT with a low forward voltage. If it is not possible to reduce the drop at BAT to an acceptable level, then for 4 and 5 cell configurations the (VC6 – VC5) amplifier may be used as the top cell amplifier as show in Table 1, which allows up to a 1.2 V difference between BAT and top cell. Table 1. Alternate Connections for 4 and 5 Cells Configuration Cell 5 Cell 4 Cell 3 Cell 2 Cell 1 5-cell VC6 – VC5 VC4 – VC3 VC3 – VC2 VC2 – VC1 VC1 – VC0 Short VC5 to VC4 VC6 – VC5 VC3 – VC2 VC2 – VC1 VC1 – VC0 Short VC5 to VC4 to VC3 4-cell Unused Cell Inputs Current Monitoring Current is measured by converting current to voltage via a sense resistor connected between SENSEN and SENSEP. A positive voltage at SENSEP with respect to SENSEN indicates a discharge current is flowing, and a negative voltage indicates a charge current. The small voltage developed across the sense resistor is amplified by gain GVIOUT and output on the VIOUT pin for conversion by the Host ADC. The voltage on VIOUT is always positive and for zero current is set to 3/4 of the output range. The current sense amplifier is inverting; discharge current causes VIOUT to decrease and charge current causes VIOUT to increase. Therefore, the measurement range for discharge currents is 3 times the measurement range for charge currents. The current sense amplifier is preceded by a multiplexer that allows measurement of either the SENSEN or SENSEP input with respect to VSS. The Host selects the pin for measurement by writing the I_AMP_CAL bit in the CONFIG_1 register. The Host then calculates the voltage across the sense resistor by subtracting the measured voltage at SENSEN from the measured voltage at SENSEP. If the SENSEN and VSS connections are such that charge and discharge currents do not flow through the connection between them, i.e. there is no voltage drop between SENSEN and VSS due to the current being measured, then the measurement of the SENSEN voltage can be regarded as a calibration step and stored by the Host for use as a pseudo-constant in the VSENSE calculation. The SENSEN voltage measurement would then only need updating when changing environmental conditions warrant. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 15 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com The Host sets GVIOUT by writing the I_GAIN bit in the CONFIG_1 register. The available gains of 4 and 8 enable operation with a variety of sense resistor values over a broad range of pack currents. The gain may be changed at any time allowing for dynamic range and resolution adjustment. The input and output ranges of the amplifier are determined by the value of the REF_SEL bit in the CONFIG_2 register. These values are shown in Table 2. Because the current amplifier is inverting, the Min column under Output Range corresponds to the Max column under Input Range. Likewise, the Max column under Output Range corresponds to the Min column under Input Range. The actual current is calculated from the measured voltage (VIOUT) as follows. Note that VSENSE is positive when discharge current is flowing. In keeping with battery pack conventions, the sign of ISENSE is inverted so that discharge current is negative. -(VIOUT(SENSEP) - VIOUT(SENSEN)) VSENSE = GVIOUT ISENSE = - VSENSE RSENSE (4) Table 2. Current Amplifier Configurations Input Range (1) (mV) REF_SEL I_GAIN Gain VIOUT (V) at ISENSE = 0 (typical) 0 0 4 1.0 0 1 8 1.0 1 0 4 2.0 1 1 8 2.0 –62.5 (1) (2) (3) Output Range (V) (2) ISENSE Resolution (mA)w/10-bit ADC (3) Min Max Min Max ISENSE Range (A) at RSENSE = 1 mΩ –62.5 187.5 0.25 1.25 –62.5 – 187.5 366 –14 91 0.27 1.11 –14 – 91 183 –125 375 0.5 2.5 –125 – 375 732 187.5 0.5 2.5 –62.5 – 187.5 366 SENSEN or SENSEP measured with respect to VSS. Output range assumes typical value of VIOUT at ISENSE = 0. For non-typical values, the output range will shift accordingly. Assumes 1 mΩ RSENSE and ADC reference voltage of 1.5 V and 3.0 V when REF_SEL = 0 and 1, respectively. Over Current Monitoring The bq76925 also includes a comparator for monitoring the current sense resistor and alerting the Host when the voltage across the sense resistor exceeds a selected threshold. The available thresholds range from 25 mV to 400 mV and are set by writing the I_THRESH bits in the CONFIG_1 register. Positive (discharge) or negative (charge) current may be monitored by setting the I_COMP_POL bit in the CONFIG_1 register. By the choice of sense resistor and threshold a variety of trip points are possible to support a wide range of applications. The comparator result is driven through the open-drain ALERT output to signal the host when the threshold is exceeded. This feature can be used to wake up the Host on connection of a load, or to alert the Host to a potential fault condition. The ALERT pin state is also available by reading the ALERT bit in the STATUS register. Temperature Monitoring To enable temperature measurements by the Host, the bq76925 provides the LDO regulator voltage on a separate output pin (VTB) for biasing an external thermistor network. In order to minimize power consumption, the Host may switch the VTB output on and off by writing to the VTB_EN bit in the POWER_CTL register. Note that if the LDO is back-fed by an external source, the VTB bias will be switched to the external source. In a typical application, the thermistor network will consist of a resistor in series with an NTC thermistor, forming a resistor divider where the output is proportional to temperature. This output may be measured by the Host ADC to determine temperature. Internal Temperature Monitoring The internal temperature (TINT) of the bq76925 can be measured by setting VCOUT_SEL = ‘01’ and CELL_SEL = ‘110’ in the CELL_CTL register. In this configuration, a voltage proportional to temperature (VTEMP_INT) is output on the VCOUT pin. This voltage is related to the internal temperature as follows: VTEMP_INT(mV) = VTEMP_INT(TINT = 25°C) – TINT(°C) × ΔVTEMP_INT 16 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Cell Balancing and Open Cell Detection The bq76925 integrates cell balancing FETs that are individually controlled by the Host. The balancing method is resistive bleed balancing, where the balancing current is set by the external cell input resistors. The maximum allowed balancing current is 50 mA per cell. The Host may activate one or more cell balancing FETs by writing the BAL_n bits in the BAL_CTL register. To allow the greatest flexibility, the Host has complete control over the balancing FETs. However, in order to avoid exceeding the maximum cell input voltage, the bq76925 will prevent two adjacent balancing FETs from being turned on simultaneously. If two adjacent bits in the balance control register are set to 1, neither balancing transistor will be turned on. The Host based balancing algorithm must also limit the power dissipation to the maximum ratings of the device. In a normal system, closing a cell balancing FET will cause 2 cell voltages to appear across one cell input. This fact can be utilized to detect a cell sense-line open condition, i.e. a broken wire from the cell sense point to the bq76925 VCn input. Table 3 shows how this can be accomplished. Note that the normal cell voltage measurements may represent a saturated or full scale reading. However, these will normally be distinguishable from the open cell measurement. Table 3. Open Cell Detection Method Method 1 Kelvin input to test Turn On VC0 BAL_1 VC1 VC2 Method 2 Result Result Measure Turn On Normal Open CELL2 CELL2 + 0.5 × CELL1 CELL2 BAL_2 CELL3 CELL3 + 0.5 × CELL2 CELL3 BAL_3 CELL4 CELL4 + 0.5 × CELL3 CELL4 BAL_2 VC3 BAL_4 CELL5 CELL5 + 0.5 × CELL4 CELL5 BAL_3 VC4 BAL_5 CELL6 CELL6 + 0.5 × CELL5 CELL6 Measure Normal Open CELL1 CELL1 + 0.5 × CELL2 CELL1 CELL2 CELL2 + 0.5 × CELL3 CELL2 BAL_4 CELL3 CELL3 + 0.5 × CELL4 CELL3 VC5 BAL_5 CELL4 CELL4 + 0.5 × CELL5 CELL4 VC6 BAL_6 CELL5 CELL5 + 0.5 × CELL6 CELL5 It should be noted that the cell amplifier headroom limits discussed above apply to the open cell detection method because by virtue of closing a switch between 2 cell inputs, internally to the device this appears as an extreme cell imbalance. Therefore, when testing for an open on CELL2 by closing the CELL1 balancing FET, the CELL2 measurement will be less than the expected normal result due to gain loss caused by the imbalance. However, the CELL2 measurement will still increase under this condition so that a difference between open (no change) and normal (measured voltage increases) can be detected. Host Interface The Host communicates with the AFE via an I2C interface. A CRC byte may optionally be used to ensure robust operation. The CRC is calculated over all bytes in the message according to the polynomial x8 + x2 + x + 1. I2C Addressing In order to reduce communications overhead, the addressing scheme for the I2C interface combines the slave device address and device register addresses into a single 7-bit address as shown below. ADDRESS[6:0] = (I2C_GROUP_ADDR[3:0] << 3) + REG_ADDR[4:0] The I2C_GROUP_ADDR is a 4-bit value stored in the EEPROM. REG_ADDR is the 5-bit register address being accessed, and can range from 0x00 – 0x1F. The factory programmed value of the group address is ‘0100’. Contact TI if an alternative group address is required. For the default I2C_GROUP_ADDR, the combined address can be formed as shown in Table 4. Table 4. Combined I2C Address for Default Group Address ADDRESS[6:0] 6 5 4:0 0 1 Register address Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 17 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Bus Write Command to bq76925 The Host writes to the registers of the bq76925 as shown in Figure 7. The bq76925 acknowledges each received byte by pulling the SDA line low during the acknowledge period. The Host may optionally send a CRC after the Data byte as shown. The CRC for write commands is enabled by writing the CRC_EN bit in the CONFIG_2 register. If the CRC is not used, then the Host generates the Stop condition immediately after the bq76925 acknowledges receipt of the Data byte. When the CRC is disabled, the bq76925 will act on the command on the first rising edge of SCL following the ACK of the Data byte. This occurs as part of the normal bus setup prior to a Stop. If a CRC byte is sent while the CRC is disabled, the first rising edge of the SCL following the ACK will be the clocking of the first bit of the CRC. The bq76925 does not distinguish these two cases. In both cases, the command will complete normally, and in the latter case the CRC will be ignored. SCL A6 SDA A5 ... A0 R/W ACK Start Address D7 D6 ... D0 ACK C7 C6 ... C0 ACK Data CRC (optional) Stop Figure 7. I2C Write Command Bus Read Command from bq76925 The Host reads from the registers of the bq76925 as shown in Figure 8. This protocol is similar to the write protocol, except that the slave now drives data back to the Host. The bq76925 acknowledges each received byte by pulling the SDA line low during the acknowledge period. When the bq76925 sends data back to the Host, the Host drives the acknowledge. The Host may optionally request a CRC byte following the Data byte as shown. The CRC for read commands is always enabled, but not required. If the CRC is not used, then the Host simply NACK’s the Data byte and then generates the Stop condition. SCL A6 SDA A5 ... A0 R/W ACK Start Address D7 D6 ... D0 ACK Slave Drives Data C7 C6 ... C0 NACK Slave Drives CRC (optional) Stop Master Drives NACK Figure 8. I2C Read Command 18 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Register Map Address Name Access 0x00 STATUS R/W D7 D6 0x01 CELL_CTL R/W 0x02 BAL_CTL R/W 0x03 CONFIG_1 R/W 0x04 CONFIG_2 R/W CRC_EN 0x05 POWER_CTL R/W SLEEP 0x06 Reserved R/W D5 D4 D3 D2 D1 D0 ALERT CRC_ERR POR VCOUT_SEL BAL_6 CELL_SEL BAL_5 I_THRESH BAL_4 BAL_3 I_COMP_POL I_AMP_CAL I_AMP_EN VC_AMP_EN BAL_2 BAL_1 I_GAIN REF_SEL SLEEP_DIS I_COMP_EN VTB_EN 0x07 CHIP_ID RO 0x08 – 0x0F Reserved R/W 0x10 VREF_CAL EEPROM VREF_OFFSET_CORR VREF_GAIN_CORR 0x11 VC1_CAL EEPROM VC1_OFFSET_CORR VC1_GAIN_CORR 0x12 VC2_CAL EEPROM VC2_OFFSET_CORR VC2_GAIN_CORR 0x13 VC3_CAL EEPROM VC3_OFFSET_CORR VC3_GAIN_CORR 0x14 VC4_CAL EEPROM VC4_OFFSET_CORR VC4_GAIN_CORR 0x15 VC5_CAL EEPROM VC5_OFFSET_CORR VC5_GAIN_CORR 0x16 VC6_CAL EEPROM VC6_OFFSET_CORR 0x17 VC_CAL_EXT_1 EEPROM VC1_OC_4 VC1_GC_4 VC2_OC_4 VC2_GC_4 VC3_OC_4 VC3_GC_4 VC4_OC_4 VC4_GC_4 REF_EN CHIP_ID 0x18 VC_CAL_EXT_2 EEPROM 0x10 – 0x1A Reserved EEPROM 0x1B VREF_CAL_EXT EEPROM 0x1C – 0x1F Reserved EEPROM VC6_GAIN_CORR VC5_OC_4 VC5_GC_4 VC6_OC_4 VC6_GC_4 1 VREF_OC_5 VREF_OC_4 VREF_GC_4 Register Descriptions STATUS Address Name Type 0x00 STATUS R/W D7 Defaults: 0 D6 D5 0 D4 0 0 D3 0 D2 D1 D0 ALERT CRC_ERR POR 0 0 1 ALERT: Over-current alert. Reflects state of the over-current comparator. ‘1’ = over-current. CRC_ERR: CRC error status. Updated on every I2C write packet when CRC_EN = ‘1’. ‘1’ = CRC error. POR: Power on reset flag. Set on each power-up and wake-up from sleep. May be cleared by writing with ‘0’. CELL_CTL Address Name Type 0x01 CELL_CTL R/W D7 (1) D5 D4 D3 VCOUT_SEL Defaults: (1) D6 0 0 D2 D1 D0 CELL_SEL 0 0 0 This bit must be kept = 0 VCOUT_SEL: VCOUT MUX select. Selects the VCOUT pin function as follows. VCOUT_SEL VCOUT 00 VSS 01 VCn (n determined by CELL_SEL) 10 VREF × 0.5 11 VREF × 0.85 CELL_SEL: Cell select. Selects the VCn input for output on VCOUT when VCOUT_SEL = ‘01’. VCOUT_SEL CELL_SEL VCOUT 01 000 VC1 01 001 VC2 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 19 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com VCOUT_SEL CELL_SEL VCOUT 01 010 VC3 01 011 VC4 01 100 VC5 01 101 VC6 01 110 VTEMP,INT 01 111 Hi-Z BAL_CTL Address Name Type 0x02 BAL_CTL R/W Defaults: D7 D6 0 0 D5 D4 D3 D2 D1 D0 BAL_6 BAL_5 BAL_4 BAL_3 BAL_2 BAL_1 0 0 0 0 0 0 BAL_n: Balance control for cell n. When set, turns on balancing transistor for cell n. Setting of two adjacent balance controls is not permitted. If two adjacent balance controls are set, neither cell balancing transistor will be turned on. However, the BAL_n bits will retain their values. CONFIG_1 Address Name Type 0x03 CONFIG_1 R/W D7 D6 D3 D2 I_THRESH D5 I_COMP_POL I_AMP_CAL 0 0 0 Defaults: D4 D1 D0 I_GAIN 0 0 I_THRESH: Current comparator threshold. Sets the threshold of the current comparator as follows: I_THRESH Comparator threshold 0x0 25 mV 0x1 50 mV 0x2 75 mV 0x3 100 mV 0x4 125 mV 0x5 150 mV 0x6 175 mV 0x7 200 mV 0x8 225 mV 0x9 250 mV 0xA 275 mV 0xB 300 mV 0xC 325 mV 0xD 350 mV 0xE 375 mV 0xF 400 mV I_COMP_POL: Current comparator polarity select. When ‘0’, trips on discharge current (SENSEP > SENSEN). When ‘1’, trips on charge current (SENSEP < SENSEN). I_AMP_CAL: Current amplifier calibration. When ‘0’, current amplifier reports SENSEN with respect to VSS. When ‘1’, current amplifier reports SENSEP with respect to VSS. This bit can be used for offset cancellation as described under OPERATIONAL OVERVIEW. 20 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com I_GAIN: Current amplifier gain. Sets the nominal gain of the current amplifier as follows. I_GAIN Current amp gain 0 4 1 8 CONFIG_2 Address Name Type D7 0x04 CONFIG_2 R/W CRC_EN Defaults: D6 D5 D4 D3 D2 D1 D0 REF_SEL 0 0 0 0 0 0 0 0 CRC_EN: CRC enable. Enables CRC comparison on write. When ‘1’, CRC is enabled. CRC on read is always enabled but is optional for Host. REF_SEL: Reference voltage selection. Sets reference voltage output on VREF pin, cell voltage amplifier gain and VIOUT output range. REF_SEL VREF (V) VCOUT Gain VIOUT Output Range (V) 0 1.5 0.3 0.25 – 1.25 1 3.0 0.6 0.5 – 2.5 POWER_CTL Address Name Type D7 D6 0x05 POWER_CTL R/W SLEEP SLEEP_DIS 0 0 Defaults: D5 0 D4 D3 D2 D1 D0 I_COMP_EN I_AMP_EN VC_AMP_EN VTB_EN REF_EN 0 0 0 0 0 SLEEP: Sleep control. Set to ‘1’ to put device to sleep SLEEP_DIS: Sleep mode disable. When ‘1’, disables the sleep mode. I_COMP_EN: Current comparator enable. When ‘1’, comparator is enabled. Disable to save power. I_AMP_EN: Current amplifier enable. When ‘1’, current amplifier is enabled. Disable to save power. VC_AMP_EN: Cell amplifier enable. When ‘1’, cell amplifier is enabled. Disable to save power. VTB_EN: Thermistor bias enable. When ‘1’, the VTB pin is internally switched to the V3P3 voltage. REF_EN: Voltage reference enable. When ‘1’, the 1.5 / 3.0 V reference is enabled. Disable to save power CHIP_ID Address Name Type 0x07 CHIP_ID RO D7 D6 D5 D4 D3 D2 D1 D0 D2 D1 D0 CHIP_ID Defaults: 0x10 CHIP_ID: Silicon version identifier. VREF_CAL Address Name Type 0x10 VREF_CAL EEPROM D7 D6 D5 D4 VREF_OFFSET_CORR D3 VREF_GAIN_CORR VREF_OFFSET_CORR: Lower 4 bits of offset correction factor for reference output. The complete offset correction factor is obtained by concatenating this value with the the two most significant bits VREF_OC_5 and VREF_OC_4, which are stored in the VREF_CAL_EXT register. The final value is a 6-bit signed 2’s complement number in the range -32 to +31 with a value of 1 mV per lsb. See description of usage in OPERATIONAL OVERVIEW. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 21 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com VREF_GAIN_CORR: Lower 4 bits of gain correction factor for reference output. The complete gain correction factor is obtained by concatenating this value with the most significant bit VREF_GC_4, which is stored in the VREF_CAL_EXT register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 0.1% per lsb. See description of usage in OPERATIONAL OVERVIEW. VC1_CAL Address Name Type 0x11 VC1_CAL EEPROM D7 D6 D5 D4 D3 VC1_OFFSET_CORR D2 D1 D0 VC1_GAIN_CORR VC1_OFFSET_CORR: Lower 4 bits of offset correction factor for cell 1 translation. The complete offset correction factor is obtained by concatenating this value with the most significant bit VC1_OC_4, which is stored in the VC_CAL_EXT_1 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 1 mV per lsb. See description of usage in OPERATIONAL OVERVIEW. VC1_GAIN_CORR: Lower 4 bits of gain correction factor for cell 1 translation. The complete gain correction factor is obtained by concatenating this value with the most significant bit VC1_GC_4, which is stored in the VC_CAL_EXT_1 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 0.1% per lsb. See description of usage in OPERATIONAL OVERVIEW. VC2_CAL Address Name Type 0x12 VC2_CAL EEPROM D7 D6 D5 D4 D3 VC2_OFFSET_CORR D2 D1 D0 VC2_GAIN_CORR VC2_OFFSET_CORR: Lower 4 bits of offset correction factor for cell 2 translation. The complete offset correction factor is obtained by concatenating this value with the most significant bit VC2_OC_4, which is stored in the VC_CAL_EXT_1 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 1 mV per lsb. See description of usage in OPERATIONAL OVERVIEW. VC2_GAIN_CORR: Lower 4 bits of gain correction factor for cell 2 translation. The complete gain correction factor is obtained by concatenating this value with the most significant bit VC2_GC_4, which is stored in the VC_CAL_EXT_1 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 0.1% per lsb. See description of usage in OPERATIONAL OVERVIEW. VC3_CAL Address Name Type 0x13 VC3_CAL EEPROM D7 D6 D5 D4 VC3_OFFSET_CORR D3 D2 D1 D0 VC3_GAIN_CORR VC3_OFFSET_CORR: Lower 4 bits of offset correction factor for cell 3 translation. The complete offset correction factor is obtained by concatenating this value with the most significant bit VC3_OC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 1 mV per lsb. See description of usage in OPERATIONAL OVERVIEW. VC3_GAIN_CORR: Lower 4 bits of gain correction factor for cell 3 translation. The complete gain correction factor is obtained by concatenating this value with the most significant bit VC3_GC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 0.1% per lsb. See description of usage in OPERATIONAL OVERVIEW. 22 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com VC4_CAL Address Name Type 0x14 VC4_CAL EEPROM D7 D6 D5 D4 D3 D2 VC4_OFFSET_CORR D1 D0 VC4_GAIN_CORR VC4_OFFSET_CORR: Lower 4 bits of offset correction factor for cell 4 translation. The complete offset correction factor is obtained by concatenating this value with the most significant bit VC4_OC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 1 mV per lsb. See description of usage in OPERATIONAL OVERVIEW. VC4_GAIN_CORR: Lower 4 bits of gain correction factor for cell 4 translation. The complete gain correction factor is obtained by concatenating this value with the most significant bit VC4_GC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 0.1% per lsb. See description of usage in OPERATIONAL OVERVIEW. VC5_CAL Address Name Type 0x15 VC5_CAL EEPROM D7 D6 D5 D4 D3 D2 VC5_OFFSET_CORR D1 D0 VC5_GAIN_CORR VC5_OFFSET_CORR: Lower 4 bits of offset correction factor for cell 5 translation. The complete offset correction factor is obtained by concatenating this value with the most significant bit VC5_OC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 1 mV per lsb. See description of usage in OPERATIONAL OVERVIEW. VC5_GAIN_CORR: Lower 4 bits of gain correction factor for cell 5 translation. The complete gain correction factor is obtained by concatenating this value with the most significant bit VC5_GC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 0.1% per lsb. See description of usage in OPERATIONAL OVERVIEW. VC6_CAL Address Name Type 0x16 VC6_CAL EEPROM D7 D6 D5 D4 D3 D2 VC6_OFFSET_CORR D1 D0 VC6_GAIN_CORR VC6_OFFSET_CORR: Lower 4 bits of offset correction factor for cell 6 translation. The complete offset correction factor is obtained by concatenating this value with the most significant bit VC6_OC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 1 mV per lsb. See description of usage in OPERATIONAL OVERVIEW. VC6_GAIN_CORR: Lower 4 bits of gain correction factor for cell 6 translation. The complete gain correction factor is obtained by concatenating this value with the most significant bit VC6_GC_4, which is stored in the VC_CAL_EXT_2 register. The final value is a 5-bit signed 2’s complement number in the range -16 to +15 with a value of 0.1% per lsb. See description of usage in OPERATIONAL OVERVIEW. VC_CAL_EXT_1 Address Name Type D7 D6 D5 D4 0x17 VC_CAL_EXT_1 EEPROM VC1_OC_4 VC1_GC_4 VC2_OC_4 VC2_GC_4 D3 D2 D1 D0 VC1_OC_4: Most significant bit of offset correction factor for cell 1 translation. See VC1_CAL register description for details. VC1_GC_4: Most significant bit of gain correction factor for cell 1 translation. See VC1_CAL register description for details. VC2_OC_4: Most significant bit of offset correction factor for cell 2 translation. See VC2_CAL register description for details. VC2_GC_4: Most significant bit of gain correction factor for cell 2 translation. See VC2_CAL register description for details. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 23 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com VC_CAL_EXT_2 Address Name Type D7 D6 D5 D4 D3 D2 D1 D0 0x18 VC_CAL_EXT_2 EEPROM VC3_OC_4 VC3_GC_4 VC4_OC_4 VC4_GC_4 VC5_OC_4 VC5_GC_4 VC6_OC_4 VC6_GC4 VC3_OC_4: Most significant bit of offset correction factor for cell 3 translation. See VC3_CAL register description for details. VC3_GC_4: Most significant bit of gain correction factor for cell 3 translation. See VC3_CAL register description for details. VC4_OC_4: Most significant bit of offset correction factor for cell 4 translation. See VC4_CAL register description for details. VC4_GC_4: Most significant bit of gain correction factor for cell 4 translation. See VC4_CAL register description for details. VC5_OC_4: Most significant bit of offset correction factor for cell 5 translation. See VC5_CAL register description for details. VC5_GC_4: Most significant bit of gain correction factor for cell 5 translation. See VC5_CAL register description for details. VC6_OC_4: Most significant bit of offset correction factor for cell 6 translation. See VC6_CAL register description for details. VC6_GC_4: Most significant bit of gain correction factor for cell 6 translation. See VC6_CAL register description for details. VREF_CAL_EXT Address Name Type 0x1B VREF_CAL_EXT EEPROM D7 D6 D5 D4 D3 D2 D1 D0 1 VREF_OC_5 VCREF_OC_4 VREF_GC4 VREF_OC_5: Most significant bit of offset correction factor for reference output. See VREF_CAL register description for details. VREF_OC_4: Next most significant bit of offset correction factor for reference output. See VREF_CAL register description for details. VREF_GC_4: Most significant bit of gain correction factor for reference output. See VREF_CAL register description for details. 24 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Changes from Original (July 2011) to Revision A • Page Changed literature number to Rev A for ProductMix release ............................................................................................... 3 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 25 bq76925 SLUSAM9B – JULY 2011 – REVISED DECEMBER 2011 www.ti.com Changes from Revision A (July 2011) to Revision B Page • Added 24-pin QFN (RGE) Package to Production Data ....................................................................................................... 2 • Added 24-pin QFN (RGE) Package to Production Data ....................................................................................................... 3 26 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): bq76925 PACKAGE OPTION ADDENDUM www.ti.com 6-Jan-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) BQ76925PW ACTIVE TSSOP PW 20 70 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ76925PWR ACTIVE TSSOP PW 20 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR BQ76925RGER ACTIVE VQFN RGE 24 3000 Green (RoHS & no Sb/Br) CU NIPDAUAGLevel-2-260C-1 YEAR BQ76925RGET ACTIVE VQFN RGE 24 250 Green (RoHS & no Sb/Br) CU NIPDAUAGLevel-2-260C-1 YEAR Samples (Requires Login) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ76925PWR TSSOP PW 20 2000 330.0 16.4 6.95 7.1 1.6 8.0 16.0 Q1 BQ76925RGER VQFN RGE 24 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 BQ76925RGET VQFN RGE 24 250 180.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ76925PWR TSSOP PW 20 2000 367.0 367.0 38.0 BQ76925RGER VQFN RGE 24 3000 367.0 367.0 35.0 BQ76925RGET VQFN RGE 24 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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