VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60° • Low forward voltage • Suitable for high pulse current operation 94 8553 • Good spectral photodetectors matching with Si • Package matched with IR emitter series VEMT3700 • Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION • Lead (Pb)-free reflow soldering VSMS3700 is an infrared, 950 nm emitting diode in GaAs technology, molded in a PLCC-2 package for surface mounting (SMD). • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • Infrared source in tactile keyboards • IR diode in low space applications • PCB mounted infrared sensors • Emitter in miniature photo-interrupters PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 4.5 ± 60 950 800 VSMS3700 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMS3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMS3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81373 Rev. 1.3, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 322 VSMS3700 Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1.5 A PV 170 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Acc. figure 11, J-STD-020 Tsd 260 °C J-STD-051, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21341 20 30 40 50 60 70 80 90 0 100 Tamb - Ambient Temperature (°C) 21342 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.3 1.7 IF = 1 A, tp = 100 μs VF 1.8 IF = 100 mA TKVF - 1.3 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj mV/K 30 μA pF IF = 100 mA, tp = 20 ms Ie IF = 1.5 A, tp = 100 μs Ie 35 IF = 100 mA, tp = 20 ms φe 15 mW IF = 100 mA TKφe - 0.8 %/K ϕ ± 60 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 20 mA tr 800 ns IF = 1 A tr 400 ns IF = 20 mA tf 800 ns IF = 1 A tf 400 ns EN 60825-1 d 0.5 mm Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Rise time Fall time Virtual source diameter 4.5 V V 100 1.6 UNIT 8 mW/sr mW/sr Note Tamb = 25 °C, unless otherwise specified www.vishay.com 323 For technical questions, contact: [email protected] Document Number: 81373 Rev. 1.3, 03-Nov-09 VSMS3700 Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 100 10 000 IF - Forward Current (mA) Ie - Radiant Intensity (mW/sr) Tamb < 60 °C tp/T = 0.005 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 0.1 1 tp - Pulse Length (ms) 95 9985 100 Φe - Radiant Power (mW) I F - Forward Current (mA) 103 104 IF - Forward Current (mA) 1000 10 3 10 2 10 1 10 0 0 1 2 3 100 10 1 0.1 100 4 V F - Forward Voltage (V) 94 7996 101 102 103 104 IF - Forward Current (mA) 94 8012 Fig. 7 - Radiant Power vs. Forward Current Fig. 4 - Forward Current vs. Forward Voltage 1.2 1.6 1.1 1.2 IF = 10 mA Ie rel; Φe rel VF rel - Relative Forward Voltage (V) 102 Fig. 6 - Radiant Intensity vs. Forward Current 10 4 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 101 94 7956 Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 -1 1 0.1 100 10 10 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Document Number: 81373 Rev. 1.3, 03-Nov-09 0 - 10 0 10 94 7993 50 140 100 T amb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 324 VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 0° 10° 20° 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 0.9 50° 0.8 60° 70° 0.7 1000 950 80° 0.6 0.4 0.2 0 94 8013 λ - Wavelength (nm) 94 7994 40° 1.0 ϕ - Angular Displacement 30° Ie, rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters technical drawings according to DIN specifications 0.9 1.75 ± 0.1 3.5 ± 0.2 Pin identification Mounting Pad Layout 4 A area covered with solder resist 2.6 (2.8) C 2.2 2.8 ± 0.15 1.2 4 Ø 2.4 1.6 (1.9) 3 + 0.15 Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 Die Position (for reference only) X = +/- 0.2 mm centrical Y = +/- 0.2 mm centrical Z = 1.13 mm +/- 0.25 mm, from top of die bottom of component www.vishay.com 325 For technical questions, contact: [email protected] Document Number: 81373 Rev. 1.3, 03-Nov-09 VSMS3700 Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors SOLDER PROFILE 300 255 °C 240 °C 217 °C Temperature (°C) 250 2.2 2.0 3.5 3.1 max. 260 °C 245 °C 5.75 5.25 200 max. 30 s 150 3.6 3.4 max. 100 s max. 120 s 4.0 3.6 8.3 7.7 100 1.85 1.65 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 1.6 1.4 4.1 3.9 0 0 50 100 150 200 250 4.1 3.9 0.25 2.05 1.95 300 94 8668 19841 Time (s) Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 Fig. 13 - Tape Dimensions in mm for PLCC-2 DRYPACK MISSING DEVICES Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. De-reeling direction 94 8158 DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. TAPE AND REEL > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 14 - Beginning and End of Reel PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. Adhesive tape Blister tape Component cavity 94 8670 Fig. 12 - Blister Tape Document Number: 81373 Rev. 1.3, 03-Nov-09 For technical questions, contact: [email protected] www.vishay.com 326 VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs COVER TAPE REMOVAL FORCE 10.0 9.0 120° 4.5 3.5 2.5 1.5 The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. 13.00 12.75 63.5 60.5 Identification Label: Vishay type group tape code production code quantity 14.4 max. 180 178 94 8665 Fig. 15 - Dimensions of Reel-GS08 10.4 8.4 120° 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 Identification Label: Vishay type group tape code production code quantity 321 329 14.4 max. 18857 Fig. 16 - Dimensions of Reel-GS18 www.vishay.com 327 For technical questions, contact: [email protected] Document Number: 81373 Rev. 1.3, 03-Nov-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1