VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity • High speed • Angle of half sensitivity: ϕ = ± 60° 22119 • Suitable for high pulse current operation • 0805 standard surface-mountable package DESCRIPTION • Floor life: 168 h, MSL 3, acc. J-STD-020 VSMY1850 is an infrared, 850 nm emitting diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (SMD). • Lead (Pb)-free reflow soldering • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Emitter source for proximity sensors • IR touch panels • IR Flash • IR illumination • 3D TV PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 10 ± 60 850 10 VSMY1850 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY1850 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 83397 Rev. 1.0, 22-Dec-10 For technical questions, contact: [email protected] www.vishay.com 1 VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.1, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 190 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C acc. figure 7, J-STD-020 Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W Soldering temperature Thermal resistance junction/ambient 120 IF - Forward Current (mA) PV - Power Dissipation (mW) 200 160 120 RthJA = 270 K/W 80 40 100 80 60 RthJA = 270 K/W 40 20 0 0 0 22108 20 40 60 80 0 100 Tamb - Ambient Temperature (°C) 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 80 100 Tamb - Ambient Temperature (°C) 22109 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF MIN. 1.65 1.9 IF = 1 A, tp = 100 μs VF 2.9 UNIT V V IF = 1 mA TKVF - 1.4 mV/K IF = 10 mA TKVF - 1.18 mV/K Reverse current IR not designed for reverse operation μA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ 125 pF IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 μs Ie 85 mW/sr IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe - 0.35 %/K Peak wavelength IF = 100 mA λp Spectral bandwidth IF = 30 mA Δλ 30 nm Temperature coefficient of λp IF = 30 mA TKλp 0.25 nm Rise time IF = 100 mA, 20 % to 80 % tr 10 ns Fall time IF = 100 mA, 20 % to 80 % tf 10 ns d 0.5 mm Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power ϕ Angle of half intensity Virtual source diameter www.vishay.com 2 5 10 15 ± 60 840 For technical questions, contact: [email protected] 850 mW/sr deg 870 nm Document Number: 83397 Rev. 1.0, 22-Dec-10 VSMY1850 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, Surface Emitter Technology BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0° 10 20° 1 0.1 0.01 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie, rel - Relative Radiant Intensity 30° tp = 100 µs IF - Forward Current (A) 10° 80° 0.001 0 0.5 1 1.5 2 2.5 3 3.5 0.6 0.4 0.2 0 94 8013 VF - Forward Voltage (V) 22097 Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Angular Displacement Ie - Radiant Intensity (mW/sr) 1000 100 tp = 100 µs 10 1 0.1 0.001 0.01 0.1 1 IF - Forward Current (A) 22110 Fig. 4 - Radiant Intensity vs. Forward Current Φe, rel - Relative Radiant Power 1 IF = 30 mA 0.75 0.5 0.25 0 650 21776-1 750 850 950 λ - Wavelength (nm) Fig. 5 - Relative Radiant Power vs. Wavelength Document Number: 83397 Rev. 1.0, 22-Dec-10 For technical questions, contact: [email protected] www.vishay.com 3 VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % 200 max. 30 s 150 max. 100 s max. 120 s 100 DRYING max. ramp up 3 °C/s max. ramp down 6 °C/s 50 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. 0 0 50 100 19841 150 200 250 300 Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS in millimeters Bottom View Cathode Anode 1 technical drawings according to DIN specifications Not indicated tolerances ± 0.1 Side View 0.35 0.85 2 0.6 0.6 Recommended solder pad Footprint Top View 1 0.82 0.625 1.2 1.25 1 0.6 Drawing-No.: 6.541-5083.01-4 Issue: 1; 29.03.10 22111 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 83397 Rev. 1.0, 22-Dec-10 VSMY1850 High Speed Infrared Emitting Diodes, Vishay Semiconductors 850 nm, Surface Emitter Technology BLISTER TAPE DIMENSIONS in millimeters 4 Ø 1.55 ± 0.05 0.2 ± 0.05 2 ± 0.05 8 2.24 3.5 ± 0.05 1.75 Anode 0.94 Cathode Ø 1.1 + 0.1 1.45 4 Not indicated tolerances ±0.1 Reel off direction Drawing-No.: 9.700-5352.01-4 Issue: 1; 13.04.10 technical drawings according to DIN specifications 22112 Document Number: 83397 Rev. 1.0, 22-Dec-10 For technical questions, contact: [email protected] www.vishay.com 5 VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 technical drawings according to DIN specifications Issue: 2; 26.04.10 20875 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 83397 Rev. 1.0, 22-Dec-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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