VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 60° 94 8553 • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz DESCRIPTION • Good spectral matching with Si photodetectors VSMB3940X01 is an infrared, 940 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD). • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering acc. J-STD-020 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Control and drive circuits • Shaft encoders PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) VSMB3940X01 13 ± 60 940 15 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB3940X01-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMB3940X01-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number: 81894 Rev. 1.5, 03-Mar-10 For technical questions, contact: [email protected] www.vishay.com 1 VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1.5 A PV 160 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W Note Tamb = 25 °C, unless otherwise specified 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21344 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage SYMBOL MIN. TYP. MAX. VF 1.15 1.35 1.6 UNIT IF = 1 A, tp = 100 μs VF 2.2 V mV/K V IF = 1 mA TKVF - 1.8 IF = 100 mA TKVF - 1.1 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ IF = 100 mA, tp = 20 ms Ie IF = 1 A, tp = 100 μs Ie 130 IF = 100 mA, tp = 20 ms φe 40 mW IF = 1 mA TKφe - 1.1 %/K IF = 100 mA TKφe - 0.51 %/K ϕ ± 60 deg Temperature coefficient of VF Reverse current Junction capacitance TEST CONDITION IF = 100 mA, tp = 20 ms Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity mV/K 10 70 7 13 μA pF 21 mW/sr mW/sr Peak wavelength IF = 30 mA λp 940 nm Spectral bandwidth IF = 30 mA Δλ 25 nm Temperature coefficient of λp IF = 30 mA TKλp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz d 0.5 mm Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81894 Rev. 1.5, 03-Mar-10 VSMB3940X01 High Speed Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 180 Ie rel - Relative Radiant Intensity (%) 100 10 tp = 100 µs tp/T= 0.001 1 0 1 2 140 120 IF = 100 mA 100 80 60 tp = 20 ms 40 3 VF - Forward Voltage (V) 21534 IF = 1 mA 160 - 60 - 40 - 20 Fig. 3 - Forward Current vs. Forward Voltage 20 60 80 100 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 Φe rel - Relative Radiant Power (%) 100 108 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 21443 90 IF = 30 mA 80 70 60 50 40 30 20 10 0 840 90 880 920 960 1000 1040 λ - Wavelength (nm) 21445 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie, rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 40 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) 21444 100 10 1 tP = 0.1 ms 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 0.1 1 21420 10 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81894 Rev. 1.5, 03-Mar-10 0.6 0.4 0.2 0 94 8013 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 3 VSMB3940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters technical drawings according to DIN specifications 0.9 1.75 ± 0.1 3.5 ± 0.2 Pin identification Mounting Pad Layout 4 A area covered with solder resist 2.6 (2.8) C 2.2 2.8 ± 0.15 1.2 4 1.6 (1.9) Ø 2.4 3 + 0.15 Drawing-No.: 6.541-5067.01-4 Issue: 5; 04.11.08 20541 SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 100 150 200 250 300 Time (s) DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81894 Rev. 1.5, 03-Mar-10 VSMB3940X01 High Speed Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs Double Hetero TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 564) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. 10.0 9.0 120° 4.5 3.5 Adhesive tape 13.00 12.75 2.5 1.5 Blister tape Component cavity Identification Label: Vishay type group tape code production code quantity 94 8670 63.5 60.5 14.4 max. 180 178 94 8665 Fig. 10 - Blister Tape Fig. 13 - Dimensions of Reel-GS08 2.2 2.0 3.5 3.1 10.4 8.4 120° 5.75 5.25 3.6 3.4 4.0 3.6 4.5 3.5 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 13.00 12.75 2.5 1.5 Identification Label: Vishay type group tape code production code quantity 0.25 2.05 1.95 94 8668 Fig. 11 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 94 8158 62.5 60.0 321 329 14.4 max. 18857 Fig. 14 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180° with regard to the feed direction. > 160 mm Tape leader 40 empty compartments min. 75 empty compartments Carrier leader Carrier trailer Fig. 12 - Beginning and End of Reel The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least component is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape. Document Number: 81894 Rev. 1.5, 03-Mar-10 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000