VISHAY TSUS5200_09

TSUS5200, TSUS5201, TSUS5202
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
•
•
•
•
•
•
•
•
•
•
•
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength: λp = 950 nm
High reliability
Angle of half intensity: ϕ = ± 15°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
94 8390
DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
in
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
TSUS5200
20
TSUS5201
25
TSUS5202
30
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
λP (nm)
tr (ns)
± 15
± 15
± 15
950
950
950
800
800
800
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Bulk
Bulk
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
T-1¾
T-1¾
TSUS5200
TSUS5201
TSUS5202
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
Tamb = 25 °C, unless otherwise specified
Document Number: 81055
Rev. 2.2, 29-Jun-09
tp/T = 0.5, tp = 100 µs
tp = 100 µs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
SYMBOL
VALUE
UNIT
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
150
300
2.5
170
100
- 40 to + 85
- 40 to + 100
260
230
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
For technical questions, contact: [email protected]
www.vishay.com
1
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
GaAs
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 230 K/W
80
60
40
100
80
60
RthJA = 230 K/W
40
20
20
0
0
0
10
21313
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
21314
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
SYMBOL
MIN.
TYP.
MAX.
1.7
IF = 100 mA, tp = 20 ms
VF
1.3
IF = 100 mA
TKVF
- 1.3
UNIT
V
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
IF = 20 mA
TKφe
- 0.8
%/K
ϕ
± 15
deg
Peak wavelength
IF = 100 mA
λp
950
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
Temperature coefficient of λp
Rise time
Fall time
Virtual source diameter
100
µA
IF = 100 mA
TKλp
0.2
nm/K
IF = 100 mA
tr
800
ns
IF = 1.5 A
tr
400
ns
IF = 100 mA
tf
800
ns
IF = 1.5 A
tf
400
ns
d
3.8
mm
Note
Tamb = 25 °C, unless otherwise specified
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 81055
Rev. 2.2, 29-Jun-09
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
GaAs
Vishay Semiconductors
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Forward voltage
TEST CONDITION
PART
TSUS5200
IF = 1.5 A, tp = 100 µs
TSUS5201
TSUS5202
VF
TSUS5200
Ie
TSUS5201
TSUS5202
IF = 100 mA, tp = 20 ms
Radiant intensity
IF = 1.5 A, tp = 100 µs
Radiant power
IF = 100 mA, tp = 20 ms
SYMBOL
MIN.
TYP.
MAX.
UNIT
VF
2.2
3.4
V
VF
2.2
3.4
V
2.2
2.7
V
10
20
50
mW/sr
Ie
15
25
50
mW/sr
Ie
20
30
50
TSUS5200
Ie
95
180
mW/sr
TSUS5201
Ie
120
230
mW/sr
170
mW/sr
TSUS5202
Ie
280
mW/sr
TSUS5200
φe
13
mW
TSUS5201
φe
14
mW
TSUS5202
φe
15
mW
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1.2
VF rel - Relative Forward Voltage (V)
I F - Forward Current (A)
10 1
I FSM = 2.5 A ( Single Pulse )
tp/T = 0.01
10 0
0.05
0.1
0.5
1.0
10 -1
10 -2
94 7989
0.9
0.8
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
94 7990
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
1000
I e - Radiant Intensity (mW/sr)
I F - Forward Current (mA)
1.0
10 2
10 4
10 3
10 2
10 1
10 0
94 7996
IF = 10 mA
0.7
10 -1
10 0
10 1
t p - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
10 -1
1.1
0
1
2
3
Fig. 4 - Forward Current vs. Forward Voltage
Document Number: 81055
Rev. 2.2, 29-Jun-09
TSUS5200
10
TSUS 5201
1
4
V F - Forward Voltage (V)
TSUS 5202
100
10 0
94 7991
10 1
10 2
10 3
I F - Forward Current (mA)
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
For technical questions, contact: [email protected]
www.vishay.com
3
TSUS5200, TSUS5201, TSUS5202
Infrared Emitting Diode, 950 nm,
GaAs
Vishay Semiconductors
1.25
TSUS 5202
Φe rel - Relative Radiant Power
Φ - Radiant Power (mW)
e
1000
100
TSUS5200
10
1
1.0
0.75
0.5
0.25
IF = 100 mA
0.1
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
94 7992
0
900
10 4
Fig. 7 - Radiant Power vs. Forward Current
Fig. 9 - Relative Radiant Power vs. Wavelength
1.6
I e rel - Relative Radiant Intensity
0°
Ie rel; Φe rel
1.2
IF = 20 mA
0.8
0.4
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0
- 10 0 10
50
140
100
0.6
T amb - Ambient Temperature (°C)
94 7993
1000
950
λ - Wavelength (nm)
94 7994
0.4
0.2
0
0.2
0.4
0.6
94 7995
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
C
R 2.49 (sphere)
< 0.7
(4.7)
7.7 ± 0.15
8.7 ± 0.3
35.5 ± 0.55
12.5 ± 0.3
Ø 5.8 ± 0.15
A
Area not plane
1.1 ± 0.25
1 min.
Ø 5 ± 0.15
0.15
0.5 +- 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5258.02-4
Issue: 6; 19.05.09
95 10916
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 81055
Rev. 2.2, 29-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1