ROHM UMR12N_11

Data Sheet
Switching Diode
UMR12N
Dimensions (Unit : mm)
Applications
Ultra high speed switching
Land size figure (Unit : mm)
0.65 0.65
2.0±0.2
各リードとも
Each
lead has same dimension
0.05
同寸法
0.25± 0.1
(2)
0.35
0.1Min
0~0.1
0.65
(3)
0.65
UMD6
0.7
1.3±0.1
Construction
Silicon epitaxial planar
1.6
(1)
(4)
0.9
(5)
2.1±0.1
(6)
1.25±0.1
Features
1) Small mold type. (UMD6)
2) High reliability.
0.15±0.05
0.9±0.1
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
Structure
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
VR
Reverse voltage (DC)
IFM
Forward current (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
Reverse current
Capacitance between terminals
φ1.1±0.1
4.0±0.1
2.2±0.1
Limits
1.15±0.1
Unit
V
V
mA
mA
A
mW
°C
°C
80
80
200
100
4
200
150
55 to 150
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
IF=100mA
IR
-
-
0.1
μA
Ct
-
-
3.5
pF
VR=80V
VR=6V , f=1MHz
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1/3
2.4±0.1
8.0±0.2
5.5±0.2
0~0.5
2.4±0.1
2.45±0.1
3.5±0.05
1.75±0.1
4.0±0.1
2011.06 - Rev.A
100
100
D2
D1
FORWARD CURRENT:IF(mA)
Ta=75℃
Ta=125℃
10
Ta=-25℃
Ta=150℃
Ta=25℃
1
Ta=75℃
Ta=125℃
Ta=-25℃
10
Ta=150℃
Ta=25℃
1
0
100
200
300
0
400 500 600 700 800 900 1000 1100
100 200 300 400 500 600 700 800 900 1000 1100 1200
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
Ta=150℃
100
D2
Ta=125℃
0.01
Ta=-25℃
0.001
20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
70
2
3
4
5
6
7
8
9
3
4
5
6
7
1
8
9
10
0
980
970
960
950
AVE:961.5mV
0.6
0.5
AVE:0.1065nA
0.2
9
5
6
7
8
9
10
Ta=25℃
IF=100mA
n=30pcs
1040
1030
1020
AVE:1035.0mV
1010
VF DISPERSION MAP
5
D2
Ta=25℃
VR=15V
n=30pcs
8
7
6
5
4
3
AVE:0.620nA
2
1
0
0
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© 2011 ROHM Co., Ltd. All rights reserved.
4
1050
VF DISPERSION MAP
0.1
IR DISPERSION MAP
3
D2
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct32
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0.7
2
10
REVERSE CURRENT:IR(nA)
0.8
1
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
D1
80
f=1MHz
Ct13
Ta=25℃
IF=100mA
n=30pcs
D1
1
Ta=25℃
VR=15V
n=30pcs
70
1060
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE CURRENT:IR(nA)
2
990
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
940
1
20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0.1
0
0.1
0
10
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
0.3
0
f=1MHz
1
80
f=1MHz
Ct12
Ta=-25℃
0.00001
FORWARD VOLTAGE:VF(mV)
10
10
0.4
0.001
0.1
0.0001
0
Ta=25℃
0.01
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
Ta=75℃
0.1
Ta=75℃
0.1
10
Ct32
1
Ta=125℃
1
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
Ta=150℃
D1
10
0.0001
0.1
0.1
0.9
REVERSE CURRENT:IR(nA)
100
FORWARD CURRENT:IF(mA)
Data Sheet
UMR12N
4
3
AVE:3.34pF
2
1
0
IR DISPERSION MAP
2/3
Ct DISPERSION MAP
2011.06 - Rev.A
5
Ta=25℃
VR=0V
f=1MHz
n=10pcs
4
4
AVE:3.64pF
3
40
3
2
2
AVE:1.86pF
1
1
VR=6V
D2
30
20
10
D1
0
0
0
0
D2
1
D1
t
0.1
1
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
9
Rth(j-a)
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
1ms
10
0.001
IF=50mA
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
VR=6V
10
10
1000
10
Ifsm
2
4
6
8
FORWARD CURRENT:IF(mA)
trr-IF CHARACTERISTICS
Ct DISPERSION MAP
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct12
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct13
REVERSE RECOVERY TIME:trr(ns)
5
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Data Sheet
UMR12N
time
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
7
6
5
AVE:6.43kV
4
3
2
AVE:0.670kV
1
300us
0.01
D1
8
0
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
D2
AVE:13.56kV
AVE:1.87kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
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Notes
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R1120A