Data Sheet Switching Diode DAN202K Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) Features 1) Small mold type. (SMD3) 2) High reliability 2.9±0.2 各リードとも Each lead has same dimension 同寸法 ＋0.1 0.15 －0.06 0.95 ＋0.2 1.6－0.1 (3) 2.8±0.2 2.4 ＋0.1 0.4 －0.05 1.0MIN. 0.8MIN. 0～0.1 0.3～0.6 (2) Construction Silicon epitaxial planar (1) 0.95 0.8±0.1 0.95 1.1±0.2 0.01 1.9±0.2 SMD3 1.9 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Limits 3.2±0.1 8.0±0.2 0～0.5 3.2±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repatitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) IFM Forward current (Double) Average rectified forward current (Single) Io Average rectified forward current (double) Io Isurge Surge current (t=1us) (Single) Isurge Surge current (t=1us) (Double) Power dissipation Pd Junction temperature Tj Storage temperature Tstg φ1.05MIN 4.0±0.1 3.2±0.1 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA mA mA mA A A mW °C °C 80 80 300 450 100 150 4 6 200 150 55 to 150 Min. Typ. Max. Conditions Unit - - 1.2 V IF=100mA Reverse current IR - - 0.1 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.C Data Sheet DAN202K Ta=150℃ 10000 Ta=125℃ 10 Ta=25℃ Ta=150℃ Ta=-25℃ 1 0 f=1MHz 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 200 300 400 500 600 700 800 900 1000 950 1 0.1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 80 0 Ta=25℃ VR=80V n=30pcs 90 930 920 910 80 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 940 70 60 50 40 AVE:9.655nA 30 20 AVE:921.7m 900 7 6 5 4 AVE:1.17pF 3 2 1 0 0 IR DISPERSION MAP Ct DISPERSION MAP 10 10 5 AVE:3.50A 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 5 4 3 2 1 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISPERSION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=100mA 10 1ms IF=10A time 8 7 6 5 4 2 0 0.01 0.1 1 10 100 TIME:t(ms) Rth-t CHARACTERISTICS 2/2 AVE:2.54kV 3 AVE:0.97kV 1 300us 1 0.001 100 9 ELECTROSTATIC DISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 20 Ta=25℃ VR=6V f=1MHz n=10pcs 8 10 VF DISPERSION MAP 20 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 100 Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A