Data Sheet Switching Diode IMN11 Applications Ultra high speed switching Dimensions (Unit : mm) Land size figure (Unit : mm) 19 2.9±0.2 0.3±0.1 各リードとも同寸法 Each lead has same dimension 0.05 1.0MIN. 1.6 (2) (1) 0.8±0.1 1.9±0.2 Construction Silicon epitaxial planar 0.95 0.3～0.6 0～0.1 (3) 0.95 0.95 2.4 (6) ＋0.2 －0.1 (5) 2.8±0.2 (4) Features 1) Small mold type. (SMD6) 2) High reliability. 0.95 0.15±0.1 0.06 0.6 0.35 0.35 0.45 0.45 0.8MIN. SMD6 1.1±0.2 0.1 Structure ROHM : SMD6 JEDEC :S0T-457 JEITA : SC-74 week code 1Pin Mark Taping specifications (Unit : mm) φ1.55±0.1 0 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (single) Io Isurge Surge current (t=1us) (Single) Power dissipation (TOTAL)(*1) Pd Junction temperature Tj Storage temperature Tstg (*1) Not exceed 200mW per element. Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time φ1.05MIN 4.0±0.1 3.2±0.1 Limits 3.2±0.1 8.0±0.2 5.5±0.2 0～0.5 3.2±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.35±0.1 Unit V V mA mA A mW °C °C 80 80 300 100 4 300 150 55 to 150 Min. Typ. Max. - - 1.2 V IF=100mA Ct - - 0.1 3.5 μA pF trr - - 4 ns VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 Unit Conditions 2011.06 - Rev.B Data Sheet IMN11 Ta=150℃ 100 10000 Ta=75℃ Ta=125℃ 10 Ta=25℃ Ta=150℃ Ta=-25℃ 1 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 80 0 90 930 920 910 AVE:921.7m 70 60 50 AVE:9.655nA 40 30 20 900 1.3 1.2 1.1 1 0.9 0.7 0.6 0 0.5 Ct DISPERSION MAP IR DISPERSION MAP 10 10 5 AVE:3.50A 8 7 6 5 4 3 2 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms 1 0.001 100 9 Rth(j-a) IF=10mA time 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 8 7 6 5 4 3 AVE:2.54kV AVE:0.97kV 2 1 300us 0.01 ELECTROSTATIC DISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 AVE:1.040pF 0.8 10 VF DISPERSION MAP 20 20 Ta=25℃ VR=6V f=1MHz n=10pcs 1.4 Ta=25℃ VR=80V n=10pcs 80 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) Ta=25℃ IF=100mA n=30pcs 940 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.5 100 950 FORWARD VOLTAGE:VF(mV) 1 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=125℃ 0 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A