ROHM UMR11N

Data Sheet
Switching Diode
UMR11N
Applications
High frequency switching
Dimensions(Unit : mm)
Land size figure(Unit : mm)
0.65 0.65
2.0±0.2
各リードと
もsame dimension
0.25± 0.1
Each
lead has
0.05
同寸法
(5)
0.9
1.6
(4)
1.25±0.1
(6)
2.1±0.1
Features
1)Small mold type.(UMD6)
2)High reliability
0.15±0.05
0.35
(1)
(2)
0.65
Construction
Silicon epitaxial planer
0.1Min
0～0.1
(3)
0.65
UMD6
0.7
1.3±0.1
0.9±0.1
Structure
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
(6)
(5)
(4)
(1)
(2)
(3)
dot (year week factory)
Taping specifications(Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
4.0±0.1
2.2±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average retcified forward current
Surge current (t=1us)
Power dissipation
Junction temperature
Storage temperature
Reverse current
Capacitance between terminals
Reverse recoverytime
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VF
IR
Ct
trr
8.0±0.2
5.5±0.2
2.4±0.1
1.15±0.1
Unit
V
V
mA
mA
A
mW
C
C
80
80
300
100
4
200
150
55 to 150
VRM
VR
IFM
Io
Isurge
Pd
Tj
Tstg
Electical characteristics(Ta=25C)
Parameter
Symbol
Forward voltage
Limits
φ1.1±0.1
0～0.5
2.4±0.1
2.45±0.1
3.5±0.05
1.75±0.1
4.0±0.1
Min.
-
Typ.
-
Max.
1.2
Unit
V
-
-
0.1
μA
IF=100mA
VR=70V
-
-
-
-
3.5
4
pF
ns
VR=6V , f=1MHz
VR=6V,IF=5mA,RL=50
1/3
Conditions
2011.06 - Rev.A
Data Sheet
UMR11N
Ta=150C
Ta=75C
100
D1,D2
D3,D4
Ta=75C
Ta=25C
Ta=150C
1
Ta=-25C
FORWARD CURRENT:I F(mA)
FORWARD CURRENT:I F(mA)
Ta=125C
10
1000
Ta=125C
10
Ta=25C
Ta=150C
1
Ta=-25C
Ta=75C
100
Ta=25C
10
Ta=-25C
1
0.1
0.1
0.1
0
0
100 200 300 400 500 600 700 800 900 100
0
100 200 300 400 500 600 700 800 900 100
0
0
D1,D2
f=1MHz
70
80
f=1MHz
1000
Ta=75C
100
10
Ta=25C
1
Ta=-25C
0.1
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
D3,D4
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
1
0.01
0.1
0.001
0
10
20
30
40
50
60
70
0
80
5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
15
0.1
20
0
940
930
920
910
AVE:921.7mV
Ta=25C
IF=100mA
n=30pcs
890
880
870
860
90
60
50
40
20
IR DISPERSION MAP
10
60
50
40
30
AVE:4.310nA
10
Ta=25C
VR=6V
f=1MHz
n=10pcs
D1,D2
8
7
6
5
4
3
AVE:1.17pF
2
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
70
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
D3,D4
AVE:9.655nA
30
VF DISPERSION MAP
Ta=25C
VR=70V
n=30pcs
80
20
70
0
VF DISPERSION MAP
90
7
6
5
4
3
1
0
0
0
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2/3
AVE:1.98pF
2
1
Ct DISPERSION MAP
VR=6V
f=1MHz
D3,D4
8
10
IR DISPERSION MAP
Ta=25C
VR=70V
n=30pcs
D1,D2
80
850
100
20
10
AVE:870.1mV
900
15
100
D3,D4
FORWARD VOLTAGE:V F(mV)
Ta=25C
IF=100mA
n=30pcs
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
900
950
D1,D2
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE CURRENT:IR(nA)
REVERSE CURRENT:IR(nA)
20
30
40
50
60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
10
D3,D4
FORWARD VOLTAGE:V F(mV)
10
Ta=125C
Ta=150C
10000
0.01
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE CURRENT:IR(nA)
Ta=125C
D1,D2
10000
REVERSE CURRENT:IR(nA)
100
Ct DISPERSION MAP
2011.06 - Rev.A
D3,D4
D1,D2
VR=6V
IF=5mA
7
RL=50
6
5
4
AVE:1.93ns
3
2
1cyc
Ifsm
15
8.3ms
10
5
AVE:3.50A
Ifsm
PEAK SURGE
FORWARD CURRENT:I FSM(A)
D1,D2
D3,D4
PEAK SURGE
FORWARD CURRENT:I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
8
20
20
10
9
Data Sheet
UMR11N
1cyc
15
8.3ms
10
AVE:2.50A
5
AVE:2.40ns
1
0
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
IFSM DISPERSION MAP
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
1000
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
10
1ms
IF=10mA
time
300us
1
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A