ROHM DA228K_11

Data Sheet
Switching Diode
DA228K
Dimensions (Unit : mm)
Applications
Ultra high speed switching
Land size figure (Unit : mm)
1.9
-0.05
Features
1) Small mold type. (SMD3)
2) High reliability.
2.9±0.2
各リードとも
Each
lead has same dimension
同寸法
1.0MIN.
+0.2
1.6-0.1
2.8±0.2
0.95
+0.1
0.15-0.06
(3)
0.8MIN.
0~0.1
(1)
0.95
Construction
Silicon epitaxial planar
0.8± 0.1
0.95
Structure
1.1±0.2
0.01
1.9±0.2
SMD3
0.3~0.6
(2)
2.4
0.4 +0.1
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
week code
(1)D2:C (2)D1:A
(3)D1:C D2:A
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
0.3±0.1
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
Capacitance between terminals
Ct32
Ct13
Ct12
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Limits
3.2±0.1
1.35±0.1
Unit
V
V
mA
mA
mA
mW
°C
°C
MHz
80
80
200
100
300
200
150
55 to 150
100
Min.
Typ.
Max.
-
-
1.2
V
IF=100mA
-
-
0.1
5.0
6.5
5.0
μA
pF
pF
pF
VR=80V
1/3
8.0±0.2
0~0.5
3.2±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current (Single)
Average rectified forward current (Single)
Io
Isurge
Surge current (t=1us)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Rated in slash put frequency
f
φ1.05MIN
4.0±0.1
3.2±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
Unit
Conditions
VR=0V , f=1MHz
2011.06 - Rev.A
100
100
D1
FORWARD CURRENT:IF(mA)
Ta=75℃
Ta=125℃
10
Ta=-25℃
Ta=150℃
Ta=25℃
1
0
Ta=125℃
Ta=-25℃
10
Ta=150℃
Ta=25℃
1
0
100 200 300 400 500 600 700 800 900 1000 1100
Ta=150℃
D2
100 200 300 400 500 600 700 800 900 1000 1100 1200
Ta=125℃
Ta=-25℃
0.001
0.0001
70
FORWARD VOLTAGE:VF(mV)
2
3
4
5
6
7
8
9
9
Ta=25℃
IF=100mA
n=30pcs
980
970
960
950
AVE:961.5mV
1
10
0
0.7
0.6
0.5
0.4
AVE:0.1065nA
0.2
9
1040
1030
1020
AVE:1035.0mV
VF DISPERSION MAP
5
D2
Ta=25℃
VR=15V
n=30pcs
7
6
5
4
3
AVE:0.620nA
2
1
0
0
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10
1010
8
0.1
IR DISPERSION MAP
9
Ta=25℃
IF=100mA
n=30pcs
D2
VF DISPERSION MAP
REVERSE CURRENT:IR(nA)
0.8
2
3
4
5
6
7
8
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1050
10
Ta=25℃
VR=15V
n=30pcs
1
10
1
D1
80
1060
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE CURRENT:IR(nA)
2
3 4
5 6
7
8
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
940
1
70
f=1MHz
Ct13
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct32
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
D1
0.1
20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0.1
0
990
1
0
10
10
f=1MHz
1
80
f=1MHz
Ct12
0.3
0
FORWARD VOLTAGE:VF(mV)
20 30 40 50 60
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Ta=-25℃
0.00001
0.1
10
10
0.9
0.001
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
Ta=75℃
1
0
Ta=25℃
0.01
10
Ct32
0.01
Ta=75℃
0.1
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
0.1
1
0.0001
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
Ta=125℃
10
0.1
0.1
Ta=150℃
D1
Ta=75℃
D2
REVERSE CURRENT:IR(nA)
100
FORWARD CURRENT:IF(mA)
Data Sheet
DA228K
4
3
AVE:3.34pF
2
1
0
IR DISPERSION MAP
2/3
Ct DISPERSION MAP
2011.06 - Rev.A
AVE:3.64pF
3
2
1
4
3
2
AVE:1.86pF
1
1
D1
t
0.1
1
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
10
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
D1
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
1ms
9
IF=50mA
time
10
7
6
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
AVE:6.43kV
5
4
3
2
0
0.01
D1
8
AVE:0.670kV
1
300us
10
0.001
2
4
6
8
FORWARD CURRENT:IF(mA)
trr-IF CHARACTERISTICS
10
Rth(j-a)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
D2
Ifsm
20
0
1000
VR=6V
D2
30
Ct DISPERSION MAP
Ct DISPERSION MAP
10
VR=6V
0
0
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
REVERSE RECOVERY TIME:trr(ns)
4
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct12
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
VR=0V
f=1MHz
n=10pcs
Ct13
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
40
5
5
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Data Sheet
DA228K
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
D2
AVE:13.56kV
AVE:1.87kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
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Notes
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R1120A