DAN235U : Diodes

Data Sheet
Band Switching Diode
DAN235U
Applications
High frequency switching
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.3
2.0±0.2
Features
1)Small mold type. (UMD3)
2)High reliability
0.65
0.9MIN.
2.1±0.1
1.25±0.1
(3)
0.8MIN
0.1Min
0~0.1
(2)
(1)
(0.65)
(0.65)
UMD3
0.7±0.1
1.3±0.1
Construction
Silicon epitaxial planar
1.6
0.3±0.1
各リードとも
Each lead has same dimension 0.15±0.05
同寸法
0.9±0.1
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
φ0.5±0.05
4.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
VR
Reverse voltage (DC)
Junction temperature
Tj
Storage temperature
Tstg
Limits
1.25±0.1
Unit
mW
V
°C
°C
150
35
125
55 to 125
Min.
Typ.
Max.
Unit
-
-
1.0
V
Conditions
IF=10mA
Reverse current
Capacitance between terminals
IR
-
-
10
nA
VR=25V
Ct
-
-
1.2
pF
Forward resistance
rf
-
-
0.9
Ω
VR=6V , f=1MHz
IF=2mA , f=100MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2.4±0.1
8.0±0.2
0~0.1
2.4±0.1
2.25±0.1
0
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
2011.06 - Rev.B
Data Sheet
DAN235U
100
100
10
Ta=125℃
Ta=25℃
1
Ta=25℃
0.1
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75℃
10
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=125℃
10
Ta=75℃
1
Ta=25℃
0.1
0.01
Ta=25℃
0.001
1
0.01
0.1
0
100 200 300 400 500 600 700 800 900 100 110
0
0
0.0001
0
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
15
20
25
30
840
830
820
AVE:834.0mV
810
0.12
0.1
0.08
AVE:0.0285nA
0.04
8.3ms
10
5
AVE:5.60A
Ct DISPERSION MAP
1
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
Irr=0.1*IR
n=10pcs
4
3
0.9
2
1
AVE:1.20ns
0.7
0.6
0.5
0.4
0.3
0.2
8.3ms
1cyc
5
4
3
2
FORWARD CURRENT : IF(mA)
rf DISPERSION MAP
1000
Ifsm
t
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
Rth(j-a)
100
Rth(j-c)
Mounted on epoxy board
IM=1mA
10
1ms
IF=10mA
time
300us
1
0
AVE:0.630Ω
0
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ifsm
Ta=25℃
f=100MHz
IF=2mA
n=10pcs
0.8
0.1
100
1
0.2
0
9
6
0.3
trr DISPERSION MAP
10
8.3ms
0.4
0
IFSM DISRESION MAP
7
0.5
AVE:0.865pF
0
0
30
0.6
0.1
FORWARD OPERATING
RESISTANCE:rf(Ω)
REVERSE RECOVERY TIME:trr(ns)
1cyc
Ifsm
8
0.7
0.02
5
15
25
Ta=25℃
VR=6V
f=1MHz
n=10pcs
0.8
IR DISPERSION MAP
20
20
0.9
0.14
VF DISPERSION MAP
15
1
Ta=25℃
VR=25V
n=30pcs
0.16
0.06
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
850
5
35
0.2
0.18
Ta=25℃
IF=10mA
n=30pcs
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
10
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
860
PEAK SURGE
FORWARD CURRENT : I FSM(A)
5
0.1
1
10
TIME:t(s)
IFSM-t CHARACTERISTICS
2/3
100
1
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
2011.06 - Rev.B
DAN235U
Data Sheet
10
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
9
8
7
6
AVE:7.38kV
5
4
AVE:1.55kV
3
2
1
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.B
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A