Data Sheet Switching Diode DA221M Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 0.8 0.13±0.05 0.45 1.2±0.1 0.32±0.05 0.5 Features 1)Ultra Small mold type. (VMD3) 2)High reliability 1.15 (3) 0～0.1 0.45 1.2±0.1 0.8±0.1 0.4 0.4 (1) 0.22±0.05 0.22±0.05 Construction Silicon epitaxial planar (2) 0.4 VMD3 0.5±0.05 0.4 Structure (1)D1:A (2)D2:C (3)D1:C D2:A ROHM : VMD3 dot (year week factory) Taping specifications (Unit : mm) 0.3±0.1 2.0±0.04 φ1.55±0.05 φ0.5±0.05 (4.0±0.1) 1.3±0.05 0 Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repatitive peak) VRM VR Reverse voltage (DC) Forward current surge peak(Single) IFM Average rectified forward current (Single) Io Isurge Surge current (t=1us) (Single) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Limits 2.0±0.05 8.0±0.1 5.5±0.2 0～0.1 1.35±0.05 0 3.5±0.05 1.75±0.07 4.0±0.07 0.6±0.05 0 Unit V V mA mA mA mW °C °C 20 20 200 100 300 150 150 55 to 150 Min. Typ. Max. Unit Conditions - - 1.0 V IF=10mA IR - - 0.1 μA Ct - - 3.0 pF VR=15V VR=6V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.C Ta=150℃ 100 100 Ta=75℃ Ta=25℃ Ta=150℃ Ta=-25℃ 1 FORWARD CURRENT:IF(mA) D2 Ta=125℃ 10 Ta=75℃ 10 Ta=25℃ Ta=125℃ Ta=150℃ 1 Ta=-25℃ 0.1 0.1 0 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 100 Ta=150℃ 100 200 300 400 500 600 700 800 900 100 110 0 0 1 Ta=25℃ 0.1 Ta=-25℃ 0.001 10 5 AVE:709.8mV 860 850 840 830 6 5 4 0.8 D1 0.7 0.6 0.5 0.4 AVE:0.1065nA 0.3 0.2 IR DISPERSION MAP 5 AVE:0.620nA 6 5 4 AVE:1.85pF 2 1 0 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. D1 7 1 IR DISPERSION MAP Ta=25℃ VR=6V f=1MHz n=10pcs 8 3 Ta=25℃ VR=15V n=30pcs 0 REVERSE RECOVERY TIME:trr(ns) 7 9 15 0.1 10 Ta=25℃ VR=15V n=30pcs 10 0.9 VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS AVE:849.7mV 10 2 0 1 Ta=25℃ IF=10mA n=30pcs D2 VF DISPERSION MAP D2 1 15 820 680 3 10 REVERSE CURRENT:IR(nA) 690 8 D2 0.1 0 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 700 15 f=1MHz 870 710 10 f=1MHz REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25℃ IF=10mA n=30pcs D1 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 15 730 9 0 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 720 Ta=-25℃ 0.01 0.001 0.1 5 Ta=25℃ 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) Ta=75℃ 0 Ta=75℃ D1 1 10 Ta=125℃ 10 D2 10 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS D1 0.01 Ta=125℃ 100 REVERSE CURRENT:IR(nA) D1 FORWARD CURRENT:IF(mA) Data Sheet DA221M Ta=25℃ VR=6V IF=10mA RL=100Ω Irr=0.1*IR n=10pcs D1 4 3 2 1 AVE:1.20ns 0 Ct DISPERSION MAP 2/3 trr DISPERSION MAP 2011.06 - Rev.C 10 5 100 4.5 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms IF=10mA time 3.5 3 2.5 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS AVE:0.33kV AVE:0.96kV 2 1.5 1 0 0.1 9 4 0.5 300us 0.01 D1 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 ELECTROSTATIC DISCHARGE TEST ESD(KV) Rth(j-a) ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 1 0.001 Data Sheet DA221M D2 8 7 6 5 4 3 AVE:5.06kV AVE:1.27kV 2 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A