PD - 97537 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Low Parasitic Inductance for Reduced Ringing and Lower EMI Delivers up to 100W per Channel into 8Ω with No Heatsink Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoHS and Halogen free AUIRF7647S2TR AUIRF7647S2TR1 DirectFET Power MOSFET V(BR)DSS 100V RDS(on) typ. 26mΩ max. 31mΩ RG (typical) 1.6Ω Qg (typical) 14nC S D G SC M2 D DirectFET ISOMETRIC SC Applicable DirectFET Outline and Substrate Outline SB S M4 L4 L6 L8 Description The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 100 VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f Pulsed Drain Current Power Dissipation PD @TA = 25°C EAS EAS(tested) f Power Dissipation e A 5.9 95 f 41 TJ Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy (Tested Value) Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and TSTG Storage Temperature Range RθJA Junction-to-Ambient RθJA Junction-to-Ambient RθJA Junction-to-Ambient RθJ-Can Junction-to-Can RθJ-PCB Junction-to-PCB Mounted IAR EAR TP 17 Continuous Drain Current, VGS @ 10V (Silicon Limited)e PD @TC = 25°C V 24 Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TA = 25°C IDM Units h g g W 2.5 45 67 h mJ See Fig. 18a,18b,16,17 270 -55 to + 175 A mJ °C Thermal Resistance Parameter fl e j k Linear Derating Factor f Typ. Max. ––– 60 12.5 ––– 20 ––– ––– 3.7 1.4 ––– 0.27 Units °C/W W/°C HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 07/13/2010 AUIRF7647S2TR/TR1 Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 100 ––– ––– V ∆V(BR)DSS/∆TJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.10 26 ––– 31 VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 3.0 ––– 4.0 -13 5.0 ––– Forward Transconductance 16 ––– ––– Internal Gate Resistance Drain-to-Source Leakage Current ––– ––– 1.6 ––– ––– 20 Gate-to-Source Forward Leakage ––– ––– ––– ––– 250 100 Gate-to-Source Reverse Leakage ––– ––– -100 Typ. Max. ∆VGS(th)/∆TJ gfs RG(int) IDSS IGSS Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 14A mΩ V VDS = VGS, ID = 50µA mV/°C VDS = 25V, ID = 14A S V/°C i Ω µA VDS = 100V, VGS = 0V nA VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Qg Min. Conditions Units Total Gate Charge ––– 14 21 VDS = 50V Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.3 ––– VGS = 10V Qgs2 Qgd Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 1.3 5.3 ––– ––– Qgodr Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 4.1 6.6 ––– ––– Qoss td(on) Output Charge Turn-On Delay Time ––– ––– 7.6 5.5 ––– ––– tr td(off) Rise Time Turn-Off Delay Time ––– ––– 8.4 7.9 ––– ––– tf Fall Time ––– 4.6 ––– RG = 6.8Ω VGS = 10V Ciss Coss Input Capacitance Output Capacitance ––– ––– 910 190 ––– ––– VGS = 0V VDS = 25V Crss Coss Reverse Transfer Capacitance Output Capacitance ––– ––– 47 960 ––– ––– Coss Coss eff. Output Capacitance Effective Output Capacitance ––– ––– 115 190 ––– ––– Min. Typ. Max. nC nC ID = 14A See Fig. 11 VDS = 16V, VGS = 0V VDD = 50V ID = 14A ns pF i ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr Units ––– ––– 24 (Body Diode) Diode Forward Voltage ––– ––– 95 ––– ––– 1.3 V Reverse Recovery Time Reverse Recovery Charge ––– ––– 37 55 ––– ––– ns nC g Surface mounted on 1 in. square Cu (still air). Mounted to a PCB with small clip heatsink (still air) Conditions MOSFET symbol A showing the integral reverse D G p-n junction diode. S TJ = 25°C, IS = 14A, VGS = 0V TJ = 25°C, IF = 14A, VDD = 25V di/dt = 100A/µs i i Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) Notes through are on page 11 2 www.irf.com AUIRF7647S2TR/TR1 Qualification Information† Automotive (per AEC-Q101) Qualification Level †† Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level Machine Model DFET2 MSL1 M4 (>400V) AEC-Q101-002 ESD Human Body Model H1A (≤500V) AEC-Q101-001 Charged Device Model C4 (≤1000V) AEC-Q101-005 RoHS Compliant Qualification standards can be found at International Rectifiers web site: Yes http://www.irf.com Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF7647S2TR/TR1 100 100 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 10 BOTTOM 1 0.1 0.01 5.0V 10 BOTTOM 5.0V 1 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 0.001 0.1 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) ID = 14A 70 60 T J = 125°C 40 30 T J = 25°C 20 10 4 6 8 10 12 14 16 18 100 1000 200 Vgs = 10V 180 160 140 120 100 80 T J = 125°C 60 40 T J = 25°C 20 0 20 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 3. Typical On-Resistance vs. Gate Voltage Fig 4. Typical On-Resistance vs. Drain Current 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 80 50 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 40°C T J = 25°C T J = 175°C 10 VDS = 25V ≤60µs PULSE WIDTH 1.0 ID = 14A VGS = 10V 2.0 1.5 1.0 0.5 3 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) Fig 6. Normalized On-Resistance vs. Temperature www.irf.com AUIRF7647S2TR/TR1 1000 5.5 5.0 ISD, Reverse Drain Current (A) VGS(th) , Gate threshold Voltage (V) 6.0 4.5 4.0 3.5 ID = 50µA ID = 250µA 3.0 ID = 1.0mA 2.5 ID = 1.0A 2.0 T J = -40°C T J = 25°C T J = 175°C 100 10 1 1.5 VGS = 0V 1.0 0.1 -75 -50 -25 0 25 50 75 100 125 150 175 200 0.2 T J , Temperature ( °C ) Fig 7. Typical Threshold Voltage vs. Junction Temperature 0.6 0.8 1.0 1.2 Fig 8. Typical Source-Drain Diode Forward Voltage 40 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd T J = 25°C C oss = C ds + C gd 30 C, Capacitance (pF) Gfs, Forward Transconductance (S) 0.4 VSD, Source-to-Drain Voltage (V) 20 T J = 175°C Ciss 1000 Coss 100 Crss 10 V DS = 5.0V 380µs PULSE WIDTH 0 10 0 5 10 15 20 25 30 1 ID,Drain-to-Source Current (A) 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical Forward Transconductance vs. Drain Current 25 14.0 12.0 VDS= 80V VDS= 50V VDS= 20V 10.0 8.0 6.0 4.0 20 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) ID= 14A 15 10 5 2.0 0 0.0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 QG, Total Gate Charge (nC) T C , Case Temperature (°C) Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage Fig 12. Maximum Drain Current vs. Case Temperature www.irf.com 5 AUIRF7647S2TR/TR1 200 EAS , Single Pulse Avalanche Energy (mJ) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100µsec 10 1msec 10msec DC 1 Tc = 25°C Tj = 175°C Single Pulse ID 2.7A 5.3A BOTTOM 14A 180 TOP 160 140 120 100 80 60 40 20 0 0.1 0 1 10 100 25 1000 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) VDS, Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area Fig 14. Maximum Avalanche Energy vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 0.01 τJ 1E-005 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ2 τ1 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 τ τi (sec) 1.60955 0.006147 1.36375 0.029323 0.12482 2.09E-05 0.60108 0.000679 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse Avalanche Current (A) ID, Drain-to-Source Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Tj = 150°C and Tstart =25°C (Single Pulse) 10 0.01 0.05 1 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 16. Typical Avalanche Current vs.Pulsewidth 6 www.irf.com AUIRF7647S2TR/TR1 EAR , Avalanche Energy (mJ) 50 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 14A 40 30 20 10 0 25 50 75 100 125 150 175 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see figure 11) Starting T J , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 17. Maximum Avalanche Energy vs. Temperature V(BR)DSS 15V tp DRIVER L VDS D.U.T RG VGS 20V + - VDD IAS tp A 0.01Ω I AS Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds L VCC DUT 0 20K 1K Vgs S Vgs(th) Fig 19a. Gate Charge Test Circuit VDS VGS RG Qgodr RD Qgd Qgs2 Qgs1 Fig 19b. Gate Charge Waveform D.U.T. VDS + - V DD 90% 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10% VGS td(on) Fig 20a. Switching Time Test Circuit www.irf.com tr t d(off) tf Fig 20b. Switching Time Waveforms 7 AUIRF7647S2TR/TR1 Automotive DirectFET Board Footprint, SC (Small Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations G=GATE D=DRAIN S=SOURCE D S D G D 8 S D www.irf.com AUIRF7647S2TR/TR1 Automotive DirectFET Outline Dimension, SC Outline (Small Size Can). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DIMENSIONS CODE A B C D E F G H J K L M P R METRIC MIN MAX 4.75 4.85 3.70 3.95 2.75 2.85 0.35 0.45 0.58 0.62 0.78 0.82 0.75 0.80 0.63 0.67 0.38 0.42 0.95 1.05 2.15 2.25 0.68 0.74 0.08 0.17 0.02 0.08 IMPERIAL MAX MIN 0.191 0.187 0.156 0.146 0.112 0.108 0.018 0.014 0.024 0.023 0.032 0.031 0.030 0.031 0.025 0.026 0.016 0.015 0.041 0.037 0.088 0.085 0.029 0.027 0.007 0.003 0.003 0.001 Automotive DirectFET Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" www.irf.com 9 AUIRF7647S2TR/TR1 Automotive DirectFET Tape & Reel Dimension (Showing component orientation). F D B B A H A E C LOADED TAPE FEED DIRECTION F C D G H E NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF7647S2TR). For 1000 parts on 7" reel, order AUIRF7647S2TR1 REEL DIMENSIONS TR1 OPTION (QTY 1000) STANDARD OPTION (QTY 4800) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN MIN MAX CODE MIN MAX MAX 6.9 N.C 12.992 A 330.0 N.C N.C 177.77 N.C 0.75 0.795 B N.C 20.2 19.06 N.C N.C N.C 0.53 0.50 0.504 C 12.8 0.520 13.5 13.2 12.8 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 2.31 3.937 E N.C 100.0 58.72 N.C N.C N.C N.C N.C F 0.53 N.C 0.724 N.C 18.4 13.50 G 0.47 0.488 N.C 12.4 11.9 0.567 14.4 12.01 H 0.47 0.469 N.C 0.606 11.9 11.9 15.4 12.01 Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. 10 NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H G DIMENSIONS IMPERIAL METRIC MIN MAX MAX MIN 0.311 0.319 7.90 8.10 0.154 4.10 0.161 3.90 0.469 0.484 12.30 11.90 0.215 5.55 0.219 5.45 0.158 4.20 0.165 4.00 0.197 0.205 5.00 5.20 0.059 N.C 1.50 N.C 0.059 1.60 0.063 1.50 Starting TJ = 25°C, L = 0.46mH, RG = 25Ω, IAS = 14A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Rθ is measured at TJ of approximately 90°C. www.irf.com AUIRF7647S2TR/TR1 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. 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