AUTOMOTIVE GRADE
AUIRF7103Q
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified*
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
V(BR)DSS
50V
RDS(on) max.
130m
ID
Top View
3.0A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
3.0
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
2.5
IDM
PD @TA = 25°C
Power Dissipation
2.4
W
VGS
16
± 20
W/°C
V
EAS
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
22
mJ
IAR
Avalanche Current
EAR
dv/dt
TJ
TSTG
c
e
c
h
Peak Diode Recovery dv/dt g
A
25
f
See Fig. 16c, 16d, 19, 20
Repetitive Avalanche Energy
Operating Junction and
A
mJ
V/ns
°C
12
-55 to + 175
Storage Temperature Range
Thermal Resistance
Typ.
Max.
Units
RJL
Junction-to-Drain Lead
Parameter
–––
20
°C/W
RJA
Junction-to-Ambient
–––
62.5
fg
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
December 5, 2012
AUIRF7103Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
50
––– –––
––– 0.057 –––
––– ––– 130
––– ––– 200
1.0 ––– 3.0
3.4 ––– –––
––– ––– 2.0
––– –––
25
––– ––– -100
––– ––– 100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A
m
VGS = 4.5V, ID = 1.5A
V VDS = VGS, ID = 250μA
S VDS = 15V, ID = 3.0A
VDS = 40V, VGS = 0V
μA
VDS = 40V, VGS = 0V, TJ = 55°C
VGS = 20V
nA
VGS = -20V
d
d
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
1.2
2.8
5.1
1.7
15
2.3
255
69
29
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
ID = 2.0A
nC VDS = 40V
VGS = 10V
VDD = 25V
ID = 1.0A
ns
RG = 6.0
RD = 25
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
d
Diode Characteristics
Parameter
IS
Continuous Source Current
VSD
trr
Qrr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
ISM
c
Min. Typ. Max. Units
–––
–––
3.0
A
–––
–––
12
–––
–––
–––
–––
35
45
1.2
53
67
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
V TJ = 25°C, IS = 1.5A, VGS = 0V
ns TJ = 25°C,IF = 1.5A
nC di/dt = 100A/μs
d
d
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
Surface mounted on 1 in square Cu board.
Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Figure 12).
ISD 2.0A, di/dt 155A/μs, VDD V(BR)DSS, TJ 175°C.
Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance.
2
December 5, 2012
www.irf.com
AUIRF7103Q
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Class M1A (+/- 50V)
AEC-Q101-002
†††
Human Body Model
Class H0 (+/- 250V)
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 1125V)
AEC-Q101-005
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
www.irf.com
3
December 5, 2012
AUIRF7103Q
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
4.5V
10
20μs PULSE WIDTH
Tj = 25°C
1
10
1
20μs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
T J = 175°C
T J = 25°C
VDS = 25V
20μs PULSE WIDTH
1.00
3.0
6.0
9.0
12.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
December 5, 2012
10
100
Fig 2. Typical Output Characteristics
100.00
10.00
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current )
4.5V
15.0
ID = 3.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
AUIRF7103Q
10000
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
1000
Ciss
Coss
100
Crss
6
3
10
1
10
0
100
0
3
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
ID, Drain-to-Source Current (A)
TJ = 175 ° C
1
TJ = 25 ° C
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
9
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
0.1
0.4
6
QG, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
VDS = 40V
VDS = 25V
VDS = 10V
9
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
Coss = Cds + Cgd
I D = 2.0A
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1
100μsec
1msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
December 5, 2012
AUIRF7103Q
RD
VDS
3.0
V GS
ID , Drain Current (A)
2.4
D.U.T.
RG
+
-VDD
1.8
VGS
Pulse Width µs
Duty Factor
1.2
Fig 10a. Switching Time Test Circuit
0.6
0.0
25
50
75
100
125
150
VDS
175
90%
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
6
December 5, 2012
www.irf.com
0.15
RDS (on) , Drain-to-Source On Resistance ()
RDS(on) , Drain-to -Source On Resistance ()
AUIRF7103Q
0.14
0.13
0.12
ID = 3.0A
0.11
0.10
0.09
4.5
6.0
7.5
9.0
10.5
12.0
13.5
15.0
2.500
2.000
1.000
0.500
VGS = 10V
0.000
0
-V GS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
35
40
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
2.0
70
60
1.8
50
ID = 250μA
Power (W)
V GS(th) Gate threshold Voltage (V)
VGS = 4.5V
1.500
1.5
40
30
20
1.3
10
1.0
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
www.irf.com
0
1.00
10.00
100.00
1000.00
Time (sec)
Fig 15. Typical Power Vs. Time
7
December 5, 2012
AUIRF7103Q
EAS , Single Pulse Avalanche Energy (mJ)
60
TOP
48
BOTTOM
ID
1.2A
2.5A
3.0A
15V
36
D.U.T
RG
24
DRIVER
L
VDS
+
- VDD
IAS
20V
tp
A
0.01
12
0
Fig 16c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 16a. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
I AS
Fig 16d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
50K
12V
VGS
.2F
.3F
D.U.T.
QGS
+
V
- DS
QGD
VG
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 17. Gate Charge Test Circuit
8
December 5, 2012
Charge
Fig 18. Basic Gate Charge Waveform
www.irf.com
AUIRF7103Q
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
10
1
0.01
0.1
0.05
0.10
0.01
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 19. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
25
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 3.0A
20
15
10
5
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 20. Maximum Avalanche Energy
Vs. Temperature
www.irf.com
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = t av ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave) ·tav
9
December 5, 2012
AUIRF7103Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
'
',0
%
$
$
+
>@
(
;E
>@
$
$
0,//,0(7(56
0,1
0$;
$ E F
'
(
H
%$6,&
%$6,&
H
+
%$6,&
%$6,&
.
/
\
$
; H
H
,1&+(6
0,1
0$;
.[
&
\
>@
& $ %
127(6
',0(16,21,1*72/(5$1&,1*3(5$60(<0
&21752//,1*',0(16,210,//,0(7(5
',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@
287/,1(&21)250672-('(&287/,1(06$$
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72
$68%675$7(
;/
;F
)22735,17
;>@
>@
;>@
;>@
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
December 5, 2012
www.irf.com
AUIRF7103Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
www.irf.com
11
December 5, 2012
AUIRF7103Q
Ordering Information
Base part
number
Package Type
Standard Pack
AUIRF7103Q
SO-8
Form
Tube
Tape and Reel
12
December 5, 2012
Complete Part Number
Quantity
95
4000
AUIRF7103Q
AUIRF7103QTR
www.irf.com
AUIRF7103Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and
conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this
information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such
altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an
unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in which
the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim
of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless
the IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated
by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products
which IR has not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number
including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in
automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
13
December 5, 2012