PD - 97459
AUTOMOTIVE GRADE
AUIRF2804S-7P
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V(BR)DSS
D
G
S
40V
RDS(on) max.
1.6mΩ
ID (Silicon Limited)
320A
ID (Package Limited)
240A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
D
SS
G
S
S
S
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Parameter
320
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
230
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
VGS
EAS
240
Pulsed Drain Current c
1360
Maximum Power Dissipation
330
W
Linear Derating Factor
Gate-to-Source Voltage
2.2
± 20
W/°C
V
630
mJ
EAS (tested)
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
h
c
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
d
1050
See Fig.12a,12b,15,16
g
A
mJ
-55 to + 175
°C
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
j
Parameter
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (PCB Mount, steady state)
i
Typ.
Max.
Units
–––
0.50
°C/W
0.50
–––
–––
62
–––
40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
02/19/2010
AUIRF2804S-7P
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on) SMD
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40
–––
–––
2.0
220
–––
–––
–––
–––
–––
0.028
–––
–––
1.2
–––
–––
–––
–––
–––
–––
1.6
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 160A
V VDS = VGS, ID = 250µA
S VDS = 10V, ID = 160A
µA VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
170
63
71
17
150
110
100
4.5
260
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
6930
1750
970
5740
1570
2340
–––
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = 160A
VDS = 32V
VGS = 10V
VDD = 20V
ID = 160A
RG = 2.6Ω
VGS = 10V
Between lead,
e
d
D
6mm (0.25in.)
from package
pF
G
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
320
ISM
(Body Diode)
Pulsed Source Current
–––
–––
1360
VSD
trr
Qrr
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
c
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L=0.049mH, RG = 25Ω, IAS = 160A, VGS =10V.
Part not recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
2
A
–––
–––
–––
–––
43
48
1.3
65
72
Conditions
MOSFET symbol
V
ns
nC
D
showing the
integral reverse
G
S
p-n junction diode.
TJ = 25°C, IS = 160A, VGS = 0V
TJ = 25°C, IF = 160A, VDD = 20V
di/dt = 100A/µs
e
e
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value is determined from sample failure population,
starting TJ = 25°C, L=0.049mH, RG = 25Ω, IAS = 160A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
www.irf.com
AUIRF2804S-7P
Qualification Information†
Automotive
(per AEC-Q101)
††
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Moisture Sensitivity Level
D2Pak 7 Pin
Machine Model
MSL1
Class M4
AEC-Q101-002
ESD
Human Body Model
Class H3A
AEC-Q101-001
Charged Device
Model
RoHS Compliant
Class C5
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRF2804S-7P
10000
10000
1000
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
4.5V
1000
BOTTOM
100
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
10
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
240
Gfs, Forward Transconductance (S)
1000.0
ID, Drain-to-Source Current(Α)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VDS = 20V
≤ 60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0
TJ = 25°C
200
160
TJ = 175°C
120
80
40
VDS = 10V
380µs PULSE WIDTH
0
0
20
40
60
80
100
120
140
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
www.irf.com
ance
AUIRF2804S-7P
14000
VGS, Gate-to-Source Voltage (V)
12000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
8000
Ciss
6000
4000
Coss
2000
Crss
ID= 160A
16
12
8
4
0
0
1
10
0
100
50
100
150
1000.0
10000
ID, Drain-to-Source Current (A)
TJ = 175°C
100.0
10.0
TJ = 25°C
1.0
1000
100µsec
100
10
1
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
0.1
0.1
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
300
OPERATION IN THIS AREA
LIMITED BY R DS (on)
VGS = 0V
0.4
250
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
0.0
200
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
VDS = 32V
VDS= 20V
2.4
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF2804S-7P
350
ID, Drain Current (A)
300
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
Limited By Package
250
200
150
100
50
ID = 160A
VGS = 10V
1.5
1.0
0.5
0
25
50
75
100
125
150
-60 -40 -20 0
175
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
T C , Case Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
1
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
τC
τ2
τ1
τ2
τ
Ri (°C/W)
0.1951
0.3050
τi (sec)
0.000743
0.008219
Ci= τi/Ri
Ci i/Ri
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
15V
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
EAS, Single Pulse Avalanche Energy (mJ)
AUIRF2804S-7P
2500
I D
21A
33A
BOTTOM 160A
TOP
2000
1500
1000
500
0
tp
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGS
QGD
4.5
VGS(th) Gate threshold Voltage (V)
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
www.irf.com
VCC
4.0
3.5
3.0
2.5
2.0
ID = 1.0A
ID = 1.0mA
ID = 250µA
1.5
1.0
0.5
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 14. Threshold Voltage vs. Temperature
7
AUIRF2804S-7P
10000
Duty Cycle = Single Pulse
Avalanche Current (A)
1000
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
800
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 160A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
175
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
www.irf.com
AUIRF2804S-7P
D.U.T
Driver Gate Drive
+
P.W.
+
-
-
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
*
RG
D=
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
Period
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
*
ISD
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V DS
V GS
RG
RD
D.U.T.
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
www.irf.com
9
AUIRF2804S-7P
D2Pak - 7 Pin Package Outline
Dimensions are shown in millimeters (inches)
D2Pak - 7 Pin Part Marking Information
Part Number
AUF2804S-7P
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRF2804S-7P
D2Pak - 7 Pin Tape and Reel
IRF2804STRL-7P
IRF2804STRL-7P
IRF2804STRL-7P
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRF2804S-7P
Ordering Information
Base part
AUIRF2804S-7P
12
Package Type
D2Pak 7 Pin
Standard Pack
Form
Tube
Complete Part Number
Quantity
75
AUIRF2804S-7P
www.irf.com
AUIRF2804S-7P
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or in other applications intended to support or sustain life, or in any other
application in which the failure of the IR product could create a situation where personal injury or death may
occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer
shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and
distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended
or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture
of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments
unless the IR products are specifically designated by IR as military-grade or enhanced plastic. Only
products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree
that any such use of IR products which IR has not designated as military-grade is solely at the Buyers risk,
and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
13