BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 330 mWatts • General purpose amplifier applications 0.120(3.04) • NPN epitaxial silicon, planar design 0.110(2.80) • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.006(0.15)MIN. FEATURES 0.056(1.40) 0.047(1.20) • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0003 ounce, 0.0084 gram 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) • Device Marking : BC817-16 : 8A BC817-25 : 8B 0.044(1.10) 0.004(0.10)MAX. BC817-40 : 8C 0.035(0.90) 0.020(0.50) 0.013(0.35) MECHANICAL DATA PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage VCEO 45 V Collector-Base Voltage VCBO 50 V Emitter-Base Voltage VEBO 5.0 V IC 500 mA PTOT 330 mW TJ , TSTG -55 to +150 oC SYMBOL Value UNIT RθJA 556 oC/W Collector Current - Continuous Max Power Dissipation (Note 1) Junction and Storage Temperature Range THERMAL CHARACTERISTICS PARAMETER Thermal Resistance , Junction to Ambient Note 1 : Transistor mounted on FR-5 board 1.0x0.75x0.062 in January 05,2011-REV.01 PAGE . 1 BC817 SERIES ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0) V(BR)CEO 45 - - V Collector-Base Breakdown Voltage (V EB=0V, Ic=10μA V(BR)CBO 50 - - V Emitter-Base Breakdown Voltage (IE=1μA,Ic=0) V(BR)EBO 5.0 - - V IEBO - - 100 nA - 100 nA ICBO 5.0 μA 100 160 250 - 250 400 600 - Emitter-Base Cutoff Current (V EB=5V) Collector-Base Cutoff Current (V CB=20V,IE=0) TJ =150oC BC817-16 BC817-25 BC817-40 DC Current Gain (Ic=100mA,V CE=1V) hFE (Ic=500mA,V CE=1V) 40 - - Collector-Emitter Saturation Voltage (Ic=500mA ,IB=50mA) V CE(SAT) - - 0.7 V Base-Emitte Voltage (Ic=500mA,V CE=1.0V) VBE(ON) - - 1.2 V C CBO - 7.0 - pF fT 100 - - MHz Collector-Base Capacitance (V CB=10V,IE=0,f=1MHz) Current Gain-Bandwidth Product (Ic=10mA,V CE=5V,f=100MHz) ELECTRICAL CHARACTERISTICS CURVES 450 300 400 250 350 300 hFE hFE 200 150 250 200 150 100 100 50 V CE = 1V 50 0 0.01 0.1 1 10 100 VCE = 1V 0 1000 0.01 0.1 Fig. 1. 1 Fig. 2. BC817-16 Typical hFE vs. I C 100 1000 BC817-25 Typical hFE vs. I C 100 700 CIB (EB) Capacitance, CJ (p F) 600 500 hFE 10 Colle ctor Cur r e nt , IC ( m A ) Colle ctor Cur r e nt , I C ( m A ) 400 300 200 10 COB (EB) 100 VCE = 1V 0 0.01 0.1 1 1 10 100 Colle ctor Curre nt , I C ( m A ) Fig. 3 January 05,2011-REV.01 BC817-40 Typical h FE vs. I C 1000 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 4 Typical Capacitances PAGE . 2 BC817 SERIES MOUNTING PAD LAYOUT SOT-23 ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2011 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. January 05,2011-REV.01 PAGE . 3