IMZ2A COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS VOLTAGE 50 Volts POWER 300mW FEATURES • PNP/ NPN epitaxial silicon, planar design • Collector-emitter voltage VCE=50V • Collector current IC=150mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : SOT23-6L plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx. Weight: 0.013gram Marking : Z2A Tr2 Tr1 Fig.137 ABSOLUTE RATINGS (TA =25°C) PARAMETER SYMBOL Tr1 Tr2 UNITS Collector-Emitter Voltage VCEO -50 50 V Collector-Base Voltage VCBO -60 60 V Emitter-Base Voltage VEBO -6 7 V IC -150 150 mA Collector Current Continuous THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNITS Max. Power Dissipation (Note1) PTOT 300 mW Thermal Resistance, Junction to Ambient (Note1) RΘJA 106 TJ,TSTG -55 to +150 Operating Junction and Storage Temperature Range O C/W O C NOTE: 1. Transistor mounted on FR-4 board 70 x 60 x 1 mm. REV.0.1-MAR.10.2009 PAGE . 1 IMZ2A ELECTRICAL CHARACTERISTICS (TA =25°C) Tr1 (PNP) PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage V(BR)CEO I C=-1mA -50 - - V Collector-Base Breakdown Voltage V(BR)CBO I C=-50µA -60 - - V Emitter-Base Breakdown Voltage V(BR)EBO I E=-50µA -6 - - V Collector-Base Cutoff Current I CBO VCB=-60V - - -0.1 µA Collector-Emitter Cutoff Current I EBO VEB=-6V - - -0.1 µA DC Current Gain (Note1) hFE VCE=-6V, I C=-1mA 120 - 560 - VCE(sat) I C/I B=-50mA/-5mA - - -0.5 V fT I E=2mA,VCE=-12V, f=100MHz - 140 - MHz C ob I E=0mA,VCE=-12V, f=100MHz - 4 5 pF MIN TYP MAX UNITS Collector-Emitter Saturation Voltage Cutoff Frequency Output Capacitance Tr2 (NPN) PARAMETER SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage V(BR)CEO I C=1mA 50 - - V Collector-Base Breakdown Voltage V(BR)CBO I C=50µA 60 - - V Emitter-Base Breakdown Voltage V(BR)EBO I E=50µA 7 - - V Collector-Base Cutoff Current I CBO VCB=60V - - 0.1 µA Collector-Emitter Cutoff Current I EBO VEB=7V - - 0.1 µA DC Current Gain (Note1) hFE VCE=6V, I C=1mA 120 - 560 - VCE(sat) I C/I B=50mA/5mA - - 0.4 V fT I E=2mA,VCE=12V, f=100MHz - 180 - MHz C ob I E=0mA,VCE=12V, f=100MHz - 2 3.5 pF Collector-Emitter Saturation Voltage Cutoff Frequency Output Capacitance REV.0.1-MAR.10.2009 PAGE . 2 IMZ2A Fig. 1. Collector Saturation Region Fig. 2. DC Current Gain ` Fig. 3. VCE(sat) versus IC Fig. 4. VBE(sat) versus IC Fig. 5. Base-Emitter Voltage REV.0.1-MAR.10.2009 PAGE . 3 IMZ2A Fig. 1. Collector Saturation Region Fig. 2. DC Current Gain ` Fig. 3. VCE(sat) versus IC Fig. 4. VBE(sat) versus IC Fig. 5. Base-Emitter Voltage REV.0.1-MAR.10.2009 PAGE . 4 IMZ2A MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.1-MAR.10.2009 PAGE . 5