BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 225 mWatts Unit: inch (mm) FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives .007(.20)MIN .119(3.00) .110(2.80) MECHANICAL DATA .083(2.10) .066(1.70) Case: SOT-23, Plastic .086(2.20) • PNP epitaxial silicon, planar design .006(.15) .002(.05) .006(.15)MAX Device Marking : BC807-16 : 7A .020(.50) .013(.35) .044(1.10) Approx. Weight: 0.008 gram .035(0.90) Terminals: Solderable per MIL-STD-750, Method 2026 BC807-25 : 7B BC807-40 : 7C 3 COLLECTOR Top View 3 Collector 1 BASE 1 Base 2 Emitter 2 EMITTER MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage V C EO -45 v Collector-Base Voltage V C BO -50 v Emitter-Base Voltage V EBO -5.0 v IC -500 mA Max Power Dissipation (Note 1) PTOT 225 mW Junction and Storage Temperature Range TJ , TSTG -55 to 150 oC Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT Thermal Resistance , Junction to Ambient RθJA 556 oC /W Note 1 : Transistor mounted on FR-4 board 70x60x1mm. REV.0.0-FEB.12.2009 PAGE . 1 ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage (Ic=-10mA, IB=0) V(BR)CEO -45 - - V Collector-Emitter Breakdown Voltage (VEB=0V, Ic=-100uA V(BR)CES -50 - - V Emitter-Base Breakdown Voltage (IE=-10uA,Ic=0) V(BR)EBO -5.0 - - V I EBO - - -100 nA - -0.1 nA I C BO -5.0 uA 100 160 250 - Emitter-Base Cutoff Current (VEB=-4V) O TJ =25 C Collector-Base Cutoff Current (VCB=-20V,IE=0) TJ DC Current Gain (Ic=-100mA,VCE=-1V) =150O C BC807-16 BC807-25 BC807-40 hFE 250 400 600 40 - - (Ic=-500mA,VcE=-1V) - Collector-Emitter Saturation Voltage (Ic=-500mA ,I B=-50mA) VCE(SAT) - - -0.7 V Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V) VBE(ON) - - -1.2 V C C BO - 7.0 - pF fT 100 - - MHz Collector-Base Capacitance (VCB=-10v,I E=0,f=1MHz) Current Gain-Bandwidth Product (Ic=-10mA,VcE=-5V,f=100MHz) ELECTRICAL CHARACTERISTICS CURVES 1000 1000 TJ = 150°C TJ = 150°C 100 hFE hFE TJ = 25°C TJ = 25°C 100 TJ = 100°C TJ = 100°C V CE = 1V V CE = 1V 10 0.01 0.1 1 10 100 10 0.01 1000 0.1 Fig. 1. 10 100 1000 Colle ctor Cur r e nt, IC (m A) Colle ctor Cur r e nt, IC (m A) Fig. 2. BC807-16 Typical hFE vs. IC 1000 1 BC807-25 Typical hFE vs. IC 100 TJ = 150°C CIB (EB) 100 Capacitance, C (pF hFE TJ = 25°C TJ = 100°C 10 COB (EB) V CE = 1V 10 0.01 0.1 1 10 100 1000 1 0.1 Colle ctor Curre nt, IC (m A) Fig. 3. REV.0.0-FEB.12.2009 BC807-40 Typical hFE vs. IC 1 10 100 Reverse Voltage, VR (V) Fig. 4. Typical Capacitances PAGE . 2 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-FEB.12.2009 PAGE . 3