PANJIT MMBT4403T/R13

MMBT4403
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
40V
POWER
225mW
FEATURES
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -40V
Collector current IC =-600mA
Complimentary (NPN) device: MMBT4401
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-202, Method 208
Approx Weight: 0.02 grams
Marking: M3A
3
COLLECTOR
Top View
3
Collector
1
BASE
1
Base
2
EMITTER
2
Emitter
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector - Emitter Voltage
VCE0
-40
V
Collector - Base Voltage
VCB0
-40
V
Emitter – Base Voltage
VEB0
-5.0
V
Collector Current - Continuous
IC
-600
mA
Max Power Dissipation (Note 1)
PTOT
225
mW
TJ, TSTG
-55 to 150
℃
PARAMETER
SYMBOL
VALUE
UNIT
Thermal Resistance , Junction to Ambient (Note 1)
RθJ A
556
℃/W
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad.
MMBT4403
ELECTRICAL CHARACTERISTICS (TJ = 25˚C, unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
MIN.
TYP.
MAX.
UNIT
Collector - Emitter Breakdown Voltage
V(BR)CE0 IC=-1.0mA, IB=0
-40
-
-
V
Collector - Base Breakdown Voltage
V(BR)CB0 IC=-100uA, IE=0
-40
-
-
V
Emitter - Base Breakdown Voltage
V(BR)EB0 IE=-100uA, IC=0
-5.0
-
-
V
Base Cutoff Current
IBEV
VCE=-35V, VEB=-0.4V
-
-
-100
nA
Collector Cutoff Current
ICEX
VCE=-35V, VEB=-0.4V
-
-
-100
nA
IC=-0.1mA, VCE=-1.0V
30
-
-
IC=-1.0mA, VCE=-1.0V
60
-
-
IC=-10mA, VCE=-1.0V
100
-
-
IC=-150mA, VCE=-2.0V
100
-
300
IC=-500mA, VCE=-2.0V
20
-
-
IC=-150mA, IB=-15 mA
-
-
-0.4
IC=-500mA, IB=-50mA
-
-
-0.75
IC=-150mA, IB=-15mA
-0.75
-
-0.95
IC=-500mA, IB=-50mA
-
-
-1.3
200
-
-
MHz
DC Current Gain
hFE
Collector - Emitter Saturation Voltage
VCE(SAT)
Base - Emitter Saturation Voltage
VBE(SAT)
Current-Gain – Bandwidth Product
fT
IC=-20mA, VCE=-10V,
f=100MHz
-
V
V
Collector - Base Capacitance
CCBO
VCB=-5.0V, IE=0, f=1MHz
-
-
8.5
pF
Emitter - Base Capacitance
CEBO
VCB=-0.5V, IC=0, f=1MHz
-
-
30
pF
Delay Time
td
VCC=-30V, VBE=-2.0V,
-
-
15
ns
Rise Time
tr
IC=-150mA, IB1=-15mA
-
-
20
ns
Storage Time
ts
VCC=-30V, IC=-150mA,
-
-
225
ns
Fall Time
tf
IB1=IB2=15mA
-
-
30
ns
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-30V
-30V
200Ω
< 2ns
0
200Ω
<20ns
+14V
1.0KΩ
+2V
CS < 10pF
-16V
1N916
1 to 100us
Duty Cycle ~ 2.0%
Duty Cycle = 2.0%
Turn-On Time
CS < 10pF
-16V
10 to 100ns
Fig. 1.
1.0KΩ
0
1N916
+4V
Fig. 2. Turn-Off Time
MMBT4403
ELECTRICAL CHARACTERISTICS CURVES
0.900
400
TJ = 150 ˚C
350
TJ = 25˚C
0.700
300
TJ = 100 ˚C
VBE(on)
hFE
0.800
VCE = 10V
250
200
TJ = 25 ˚C
0.600
TJ = 100˚C
0.500
0.400
150
TJ =150˚C
0.300
100
0.200
0.1
1
10
100
1000
0.1
Collector Current, IC (mA)
10
100
1000
Collector Current, IC (mA)
Fig. 3. Typical hFE vs Collector Current
Fig. 4. Typical VBE vs Collector Current
100
0.500
IC/IB = 10
0.450
0.400
CIB (EB)
Capacitance (pF)
0.350
VCE(sat)
1
0.300
0.250
0.200
TJ = 150˚C
0.150
10
COB (CB)
0.100
0.050
TJ = 25˚C
1
0.000
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 5. Typical VCE (sat) vs Collector Current
0.1
1
10
100
Reverse Voltage (V)
Fig. 6. Typical Capacitances vs Reverse Voltage
MMBT4403
RECOMMENTED PAD LAYOUT
ORDER INFORMATION
MMBT4403 T/R7 – 7” Reel, 3,000 Units/Reel
MMBT4403 T/R13 – 13” Reel, 10,000 Units/Reel
Copyright PanJit International, Inc 2005
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information herein are subject to change without notice. PanJit makes no warranty, representation or
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