VISHAY TCET1118

TCET111.(G)
VISHAY
Vishay Semiconductors
Optocoupler with Phototransistor Output
\
Features
• CTR offered in 9 Groups
• Isolation materials according to UL94-VO
• Pollution degree 2
(DIN/VDE 0110 / resp. IEC 664)
• Climatic classification 55/100/21 (IEC 68 part 1)
• Special construction:
Therefore, extra low coupling capacity of typical
0.2 pF, high Common Mode Rejection
• Low temperature coefficient of CTR
• Temperature range - 40 to + 110 °C
• Coupling System U
• Rated impulse voltage (transient overvoltage)
VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 Vpeak )
• Rated recurring peak voltage (repetitive)
VIORM = 600 V RMS
• Creepage current resistance according to VDE
0303/IEC 112 Comparative Tracking Index:
CTI ≥ 175
• Thickness through insulation ≥ 0.75 mm
• Internal creepage distance > 4 mm
• External creepage distance > 8 mm
Agency Approvals
• BSI: EN 60065:2002, EN 60950:2000
Certificate number 7081 and 7402
• FIMKO (SETI): EN 60950:2000
Certificate number FI 18973
• Underwriters Laboratory (UL)
File number E 76222
• VDE IEC 60747
Certificate number 115667
Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
• For appl. class I - IV at mains voltage ≤ 300 V
Document Number 83546
Rev. A3, 18-Mar-03
Coll.
Emitter
17918
1
Anode Cath.
C
• For appl. class I - III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface, with operating temperature up to
110°C
Description
The TCET111.(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting
diode in a 4-lead plastic dual inline package.
The elements are mounted on one lead frame using a
coplanar technique, providing a fixed distance
between input and output for highest safety requirements.
VDE Standards
These couplers perform safety functions according to
the following equipment standards:
VDE 0884 / IEC 60747:2003
Optocoupler for electrical safety requirements
IEC 60950
Office machines (applied for reinforced isolation for
mains voltage < 400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related
household apparatus
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TCET111.(G)
VISHAY
Vishay Semiconductors
Order Information
Part
Remarks
TCET1110 (G)
50 to 600 %
TCET1111 (G)
40 to 80 %
TCET1112 (G)
63 to 125 %
TCET1113 (G)
100 to 200 %
TCET1114 (G)
160 to 320 %
TCET1115 (G)
50 to 150 %
TCET1116 (G)
100 to 300 %
TCET1117 (G)
80 to 160 %
TCET1118 (G)
130 to 260 %
TCET1119 (G)
200 to 400 %
G = Lead form 10.16 mm; G is not marked on the body,
4 Pin = Single Channel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Emitter
Symbol
Value
Reverse voltage
Parameter
VR
6
V
Forward current
IF
60
mA
Forward surge current
Test condition
tp ≤ 10 µs
Power dissipation
Junction temperature
Unit
IFSM
1.5
A
PDiss
100
mW
Tj
125
°C
Detector
Symbol
Value
Unit
Collector emitter voltage
Parameter
Test condition
VCEO
70
V
Emitter collector voltage
VECO
7
V
IC
50
mA
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
PDiss
150
mW
Tj
125
°C
Symbol
Value
Unit
VIO
5
kV
Total power dissipation
Ptot
250
mW
Operating ambient temperature
range
Tamb
- 40 to + 110
°C
Tstg
- 55 to + 125
°C
Tsd
260
°C
Power dissipation
Junction temperature
Coupler
Parameter
Isolation test voltage (RMS)
Test condition
t = 1 min
Storage temperature range
Soldering temperature
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2
2 mm from case t ≤ 10 s
Document Number 83546
Rev. A3, 18-Mar-03
TCET111.(G)
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Emitter
Symbol
Typ.
Max
Forward voltage
Parameter
IF = ± 50 mA
Test condition
VF
1.25
1.6
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
Unit
V
pF
Detector
Symbol
Min
Collector emitter voltage
Parameter
IC = 1 mA
Test condition
VCEO
70
Typ.
Max
Unit
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
Collector emitter cut-off current
VCE = 20 V, If = 0, E = 0
ICEO
10
100
nA
Symbol
Typ.
Max
Unit
0.3
V
Coupler
Parameter
Test condition
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
110
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
Current Transfer Ratio
Parameter
IC /IF
Document Number 83546
Rev. A3, 18-Mar-03
Part
Symbol
Min
Typ.
VCE = 5 V, IF = 1 mA
Test condition
TCET1111 (G)
CTR
0.13
0.30
Max
Unit
%
VCE = 5 V, IF = 1 mA
TCET1112 (G)
CTR
0.22
0.45
%
VCE = 5 V, IF = 1 mA
TCET1113 (G)
CTR
0.34
0.70
%
VCE = 5 V, IF = 1 mA
TCET1114 (G)
CTR
0.56
0.90
VCE = 5 V, IF = 5 mA
TCET1110 (G)
CTR
0.50
6.0
%
VCE = 5 V, IF = 5 mA
TCET1115 (G)
CTR
0.5
1.5
%
VCE = 5 V, IF = 5 mA
TCET1116 (G)
CTR
1.0
3.0
%
VCE = 5 V, IF = 5 mA
TCET1117 (G)
CTR
0.8
1.6
%
VCE = 5 V, IF = 5 mA
TCET1118 (G)
CTR
1.3
2.6
%
VCE = 5 V, IF = 5 mA
TCET1119 (G)
CTR
2.0
4.0
%
VCE = 5 V, IF = 10 mA
TCET1111 (G)
CTR
0.40
0.8
%
VCE = 5 V, IF = 10 mA
TCET1112 (G)
CTR
0.63
1.25
%
VCE = 5 V, IF = 10 mA
TCET1113 (G)
CTR
1.0
2.0
%
VCE = 5 V, IF = 10 mA
TCET1114 (G)
CTR
1.6
3.2
%
%
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TCET111.(G)
VISHAY
Vishay Semiconductors
Maximum Safety Ratings
(according to VDE 0884) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Emitter
Parameter
Symbol
Max
Unit
IF
130
mA
Symbol
Max
Unit
PDiss
265
mW
Symbol
Max
Unit
VIOTM
8
kV
Tsi
150
°C
Forward current
Detector
Parameter
Power dissipation
Coupler
Parameter
Rated impulse voltage
Safety temperature
Insulation Rated Parameters
Parameter
Test condition
Symbol
Min
Unit
Vpd
1.6
kV
VIOTM
8
kV
tTr = 60 s, ttest = 10 s
Vpd
1.3
kV
VIO = 500 V
RIO
12
10
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
RIO
109
Ω
Partial discharge test voltage Routine test
100 %, ttest = 1 s
Partial discharge test voltage Lot test (sample test), (see
figure 2)
tTr = 60 s, ttest = 10 s
Insulation resistance
(construction test only)
Ptot – Total Power Dissipation ( mW )
VIOTM
300
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
Phototransistor
Psi ( mW )
250
200
VPd
VIOWM
VIORM
150
100
IR-Diode
Isi ( mA )
50
0
0
0
25
94 9182
50
75
100
125
150
Tsi – Safety Temperature ( °C )
Figure 1. Derating diagram
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4
13930
t3 ttest t4
t1
tTr = 60 s
t2
tstres
t
Figure 2. Test pulse diagram for sample test according to DIN VDE
0884; IEC60747
Document Number 83546
Rev. A3, 18-Mar-03
TCET111.(G)
VISHAY
Vishay Semiconductors
Switching Characteristics
Test condition
Symbol
Typ.
Unit
Delay time (see figure 3)
Parameter
VS = 5 V, IC = 2 mA, RL = 100 Ω
td
3.0
µs
Rise time (see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω
tr
3.0
µs
Turn-on time (see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω
ton
6.0
µs
Storage time (see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω
ts
0.3
µs
Fall time (see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω
tf
4.7
µs
Turn-off time (see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 Ω
toff
5.0
µs
Turn-on time see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 kΩ
ton
9.0
µs
Turn-off time see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 kΩ
toff
10.0
µs
IF
0
+5V
IF
IF
IC = 2 mA; adjusted through
input amplitude
RG = 50 W
tp
= 0.01
T
tp = 50 Ps
Channel I
Channel II
50 W
100 W
Oscilloscope
RL = 1 MW
CL = 20 pF
Figure 3. Test circuit, non-saturated operation
0
0
IC
IF
IF = 10 mA
tp
t
100%
90%
10%
0
tp
td
tr
ton (= td + tr)
95 10804
96 11698
tr
td
ton
ts
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
t
tf
toff
storage time
fall time
turn-off time
Figure 5. Switching times
+5V
IC
RG = 50 W
tp
= 0.01
T
tp = 50 Ps
Channel I
Channel II
50 W
Oscilloscope
RL t 1 MW
CL d 20 pF
1 kW
95 10843
Figure 4. Test circuit, saturated operation
Document Number 83546
Rev. A3, 18-Mar-03
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5
TCET111.(G)
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Ptot –Total Power Dissipation ( mW )
300
10000
10000.00
Coupled Device
250
VCE = 30 V
ICEO – Collector Dark Current,
with open Base ( nA )
1000
1000.00
200
Phototransistor
150
IR–Diode
100
50
10
10.00
0
1
1.00
0
20
40
60
80
100
120
Tamb – Ambient Temperature ( °C )
16736
10 V
100
100.00
Figure 6. Total Power Dissipation vs. Ambient Temperature
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
16738
120
Figure 9. Collector Dark Current vs. Ambient Temperature
100
IC – Collector Current ( mA )
I F – Forward Current ( mA)
1000.0
100.0
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
V F – Forward Voltage ( V )
V CE=5V
10
1
0.1
0.01
0.1
Figure 7. Forward Current vs. Forward Voltage
1
100
10
I F – Forward Current ( mA )
95 11027
Figure 10. Collector Current vs. Forward Current
20mA
IC – Collector Current ( mA)
CTR rel – Relative Current Transfer Ratio
100
1.20
1.00
0.80
VCE = 5 V
IF = 5 mA
0.60
0.40
10mA
10
5mA
2mA
1
1mA
0.20
0.00
–40 –20
16737
0
20
40
60
80 100 120
Tamb – Ambient Temperature ( °C )
Figure 8. Relative Current Transfer Ratio vs. Ambient
Temperature
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6
I F=50mA
0.1
0.1
95 10985
1
100
10
V CE – Collector Emitter Voltage ( V )
Figure 11. Collector Current vs. Collector Emitter Voltage
Document Number 83546
Rev. A3, 18-Mar-03
TCET111.(G)
VISHAY
1.0
ton / toff –Turn on / Turn off Time ( µ s )
VCEsat– Collector Emitter Saturation Voltage (V)
Vishay Semiconductors
20%
0.8
CTR=50%
0.6
0.4
0.2
10%
50
30
toff
20
10
0
1
I C – Collector Current ( mA )
95 11028
0
5
CTR – Current Transfer Ratio ( % )
20
15
Figure 15. Turn on / off Time vs. Forward Current
Pin1 Indication
Type
1000
V CE=5V
ET1110
V 223 U63
100
10
16745
1
0.1
1
100
10
Company
Logo
Date
Code
(YM)
Coupling
System
Indicator
Production
Location
I F – Forward Current ( mA )
95 11029
Figure 13. Current Transfer Ratio vs. Forward Current
ton / toff –Turn on / Turn off Time ( µ s )
10
I F – Forward Current ( mA )
95 11031
Figure 12. Collector Emitter Saturation Voltage vs. Collector
Current
ton
0
100
10
Saturated Operation
V S=5V
RL=1k Ω
40
Figure 16. Marking example
10
8
Non Saturated
Operation
V S=5V
RL=100 Ω
ton
6
toff
4
2
0
0
95 11030
2
4
6
10
I C – Collector Current ( mA )
Figure 14. Turn on / off Time vs. Collector Current
Document Number 83546
Rev. A3, 18-Mar-03
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TCET111.(G)
VISHAY
Vishay Semiconductors
Package Dimension of TCET111. in mm
14789
Package Dimension of TCLT11.G in mm
14792
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Document Number 83546
Rev. A3, 18-Mar-03
TCET111.(G)
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83546
Rev. A3, 18-Mar-03
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9