TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Optocoupler, Phototransistor Output (Single, Dual Channel) Features • • • • • • • Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection CTR offered in 5 groups Low temperature coefficient of CTR Available in single or dual channel Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E76222 System Code U, Double Protection • CSA 22.2 bulletin 5A, Double Protection • BSI IEC60950 IEC60065 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • FIMKO Applications Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface Reinforced Isolation provides circuit protection against electrical shock (Safety Class II) Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • For appl. class I - IV at mains voltage ≤ 300 V • For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: E C 4 3 1 2 A C 4 PIN 8 PIN 15123 C V D E e3 Pb Pb-free VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0804 Telecommunication apparatus and data processing IEC 60065 Safety for mains-operated electronic and related household apparatus Description The TCET1200/ TCET2200 consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin (single channel) or 8-pin plastic dual inline package. Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 1 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Order Information Part Remarks TCET1200 CTR 50 - 600 %, DIP-4 TCET1201 CTR 40 - 80 %, DIP-4 TCET2200 CTR 50 - 600 %, DIP-8 TCET1202 CTR 63 - 125 %, DIP-4 TCET1203 CTR 100 - 200 %, DIP-4 TCET1204 CTR 160 - 320 %, DIP-4 TCET1200G CTR 50 - 600 %, DIP-4 TCET1201G CTR 40 - 80 %, DIP-4 TCET1202G CTR 63 - 125 %, DIP-4 TCET1203G CTR 100 - 200 %, DIP-4 TCET1204G CTR 160 - 320 %, DIP-4 G = Leadform 10.16 mm; G is not marked on the body Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6 V Forward current IF 60 mA Forward surge current Test condition tp ≤ 10 µs Power dissipation Junction temperature Unit IFSM 1.5 A Pdiss 100 mW Tj 125 °C Unit Output Symbol Value Collector emitter voltage Parameter Test condition VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature ICM 100 mA Pdiss 150 mW Tj 125 °C Coupler Symbol Value Unit Isolation test voltage (RMS) Parameter Test condition VISO 5000 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Tstg - 55 to + 125 °C Tsld 260 °C Storage temperature range Soldering temperature www.vishay.com 2 2 mm from case t ≤ 10 s Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = ± 50 mA Test condition Symbol VF Min 1.25 1.6 Junction capacitance VR = 0 V, f = 1 MHz Cj 50 Unit V pF Output Symbol Min Collector emitter voltage Parameter IC = 1 mA Test condition VCEO 70 Typ. Max Unit V Emitter collector voltage IE = 100 µA VECO 7 V Collector-emitter cut-off current VCE = 20 V, If = 0, E = 0 ICEO 10 100 nA Typ. Max Unit 0.3 V Coupler Parameter Test condition Symbol Min Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Current Transfer Ratio Parameter IC/IF Part Symbol Min Max Unit VCE = 5 V, IF = 5 mA Test condition TCET1200 TCET1200G CTR 50 600 % VCE = 5 V, IF = 10 mA TCET1201 TCET1201G CTR 40 80 % TCET1202 TCET1202G CTR 63 125 % TCET1203 TCET1203G CTR 100 200 % TCET1204 TCET1204G CTR 160 320 % TCET2200 CTR 50 600 % VCE = 5 V, IF = 5 mA Typ. Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Forward current Document Number 83501 Rev. 1.5, 26-Oct-04 Test condition Symbol IF Min Typ. Max Unit 130 mA www.vishay.com 3 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Output Parameter Test condition Power dissipation Symbol Min Typ. Pdiss Max Unit 265 mW Coupler Parameter Test condition Rated impulse voltage Safety temperature Symbol Max Unit VIOTM Min Typ. 8 kV Tsi 150 °C Max Unit Insulation Rated Parameters Parameter Test condition Partial discharge test voltage Routine test 100 %, ttest = 1 s Partial discharge test voltage Lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100 °C VIO = 500 V, Tamb = 150 °C Symbol Min Vpd 1.6 Typ. kV VIOTM 8 kV Vpd 1.3 kV RIO 1012 Ω RIO 1011 Ω RIO 109 Ω (construction test only) Ptot – Total Power Dissipation ( mW ) VIOTM 300 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s Phototransistor Psi ( mW ) 250 200 VPd VIOWM VIORM 150 100 IR-Diode Isi ( mA ) 50 0 0 0 25 94 9182 50 75 100 125 150 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram www.vishay.com 4 13930 t3 ttest t4 t1 tTr = 60 s t2 tstres t Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Switching Characteristics Test condition Symbol Delay time Parameter VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) td Min Typ. 3.0 Max µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) tr 3.0 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) ton 6.0 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) ts 0.3 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) tf 4.7 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) toff 5.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) ton 9.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) toff 10.0 µs IF 0 +5V IF IF IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 Ps Channel I Channel II 50 W 100 W Oscilloscope RL = 1 MW CL = 20 pF Figure 3. Test circuit, non-saturated operation 0 IF IF = 10 mA 96 11698 0 IC tp t 100% 90% 10% 0 tp td tr ton (= td + tr) 95 10804 Unit tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 5. Switching Times +5V IC RG = 50 Ω tp = 0.01 T tp = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope RL≥ 1M Ω CL ≤ 20 pF 95 10843 Figure 4. Test circuit, saturated operation Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 5 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) P tot –Total Power Dissipation ( mW) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 V CE = 20 V IF = 0 1000 100 10 1 0 0 40 80 Tamb – Ambient Temperature( °C ) 96 11700 0 120 25 Figure 6. Total Power Dissipation vs. Ambient Temperature 50 100 75 Tamb - Ambient Temperature ( ° C ) 95 11026 Figure 9. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA ) I F - Forward Current ( mA ) 1000 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 10 1 0.1 0.01 0.1 0.1 96 11862 V CE=5V 20mA V CE=5V I F=5mA IC – Collector Current ( mA) CTRrel – Relative Current Transfer Ratio 100 1.5 1.0 0.5 0 –25 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 6 Figure 10. Collector Current vs. Forward Current 2.0 95 11025 100 10 I F – Forward Current ( mA ) 95 11027 Figure 7. Forward Current vs. Forward Voltage 1 I F=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0.1 95 10985 1 100 10 V CE – Collector Emitter Voltage ( V ) Figure 11. Collector Current vs. Collector Emitter Voltage Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 1.0 ton / toff –Turn on / Turn off Time ( µ s ) VCEsat– Collector Emitter Saturation Voltage (V) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% Saturated Operation V S=5V RL=1k Ω 40 30 toff 20 10 0 ton 0 1 100 10 I C – Collector Current ( mA ) 95 11028 0 95 11031 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 50 5 10 15 20 I F – Forward Current ( mA ) Figure 15. Turn on / off Time vs. Forward Current 1000 V CE=5V 100 10 1 0.1 1 100 10 I F – Forward Current ( mA ) 95 11029 ton / toff –Turn on / Turn off Time ( µ s ) Figure 13. Current Transfer Ratio vs. Forward Current 10 8 Non Saturated Operation V S=5V RL=100 Ω ton 6 toff 4 2 0 0 95 11030 2 4 6 10 I C – Collector Current ( mA ) Figure 14. Turn on / off Time vs. Collector Current Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 7 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Package Dimensions in mm 14789 Package Dimensions in mm 14792 www.vishay.com 8 Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Package Dimensions in mm 14784 Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 9 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83501 Rev. 1.5, 26-Oct-04