TCMT1600 / TCMT4600 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Single/Quad Channel, Half Pitch Mini-Flat Package Features • • • • • • • Low profile package (half pitch) AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF Low temperature coefficient of CTR Wide ambient temperature range Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17224 C E 9 Agency Approvals • UL1577, File No. E76222 System Code M, Double Protection • C-UL CSA 22.2 bulletin 5A, System Code U 1 2 A C 8 4 PIN 16 PIN Applications e3 e3 C Pb Pb Pb-free Pb-free Programmable logic controllers Description Order Information The low profile Miniflat package includes an Optocoupler with AC Input and Transistor Output. It is available in single channel (4 pin) TCMT1600 or quad channel (16 pin)TCMT4600. Part Remarks TCMT1600 CTR 80 - 300 %, Single Channel, SMD-4 TCMT4600 CTR 80 - 300 %, Quad Channel, SMD-16 TCMT4600T0* CTR 80 - 300 %, Quad Channel, SMD-16 NOTE: Available only on tape and reel. * Product is rotated 180° in tape and reel cavity. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6 V Forward current IF ± 60 mA IFSM ± 1.5 A Pdiss 100 mW Tj 125 °C Forward surge current Power dissipation Junction temperature Document Number 83512 Rev. 1.5, 02-Feb-05 Test condition tp ≤ 10 µs Unit www.vishay.com 1 TCMT1600 / TCMT4600 Vishay Semiconductors Output Symbol Value Collector emitter voltage Parameter Test condition VCEO 70 V Emitter collector voltage VECO 7 V Collector current Collector peak current IC 50 mA ICM 100 mA Pdiss 150 mW Tj 125 °C tp/T = 0.5, tp ≤ 10 ms Power dissipation Unit Junction temperature Coupler Parameter Test condition Symbol AC isolation test voltage (RMS) VISO 1) Value Unit 3750 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Tsld 240 °C 1) Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 50 mA Test condition Symbol VF Min 1.25 1.6 Junction capacitance VR = 0 V, f = 1 MHz Cj 50 Unit V pF Output Symbol Min Collector emitter voltage Parameter IC = 100 µA Test condition VCEO 70 Typ. Max Unit V Emitter collector voltage IE = 100 µA VECO 7 V Collector dark current VCE = 20 V, IF = 0, E = 0 ICEO 100 nA Max Unit 0.3 V Coupler Parameter Test condition Symbol Min Typ. Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency IF = 10 mA, VCE = 5 V, RL = 100 Ω fc 100 kHz Capacitance (input-output) f = 1 MHz CIO 0.3 pF www.vishay.com 2 Document Number 83512 Rev. 1.5, 02-Feb-05 TCMT1600 / TCMT4600 Vishay Semiconductors Current Transfer Ratio Parameter Test condition IC/IF VCE = 5 V, IF = 5 mA Part Symbol Min TCMT1600 CTR 80 Typ. Max 300 Unit % TCMT4600 CTR 80 300 % Switching Characteristics Parameter Test condition Symbol VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) td 3.0 µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tr 3.0 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tf 4.7 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ts 0.3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ton 6.0 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) toff 5.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 1) ton 9.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 1) toff 18.0 µs Delay time 0 IF +5 V IF IC = 2 mA; RG = 50 Ω tp = 0.01 T tp = 50 ms Min Typ. Max IF adjusted throug input amplitude Unit 96 11698 0 IC tp t 100% 90% Channel I Channel II 50 Ω 100 Ω 15234 Oscilloscope RL = 1 MΩ CL = 20 pF 10% 0 tp td tr ton (= td + tr) Figure 1. Test circuit, non-saturated operation 0 IF IF = 10 mA tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 3. Switching Times +5 V RG = 50 Ω tp = 0.01 T tp = 50 ms Channel I Channel II 50 Ω 1 kΩ 15235 Oscilloscope RL = 1 MΩ CL = 20 pF Figure 2. Test circuit, saturated operation Document Number 83512 Rev. 1.5, 02-Feb-05 www.vishay.com 3 TCMT1600 / TCMT4600 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) P tot –Total Power Dissipation ( mW) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 V CE = 20 V IF = 0 1000 100 10 1 0 0 40 80 Tamb – Ambient Temperature( °C ) 96 11700 0 120 25 Figure 4. Total Power Dissipation vs. Ambient Temperature 50 100 75 Tamb - Ambient Temperature ( ° C ) 95 11026 Figure 7. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA ) I F - Forward Current ( mA ) 1000 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 10 1 0.1 0.01 0.1 0.1 96 11862 V CE=5V 20mA V CE=5V I F=5mA IC – Collector Current ( mA) CTRrel – Relative Current Transfer Ratio 100 1.5 1.0 0.5 0 –25 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 Figure 8. Collector Current vs. Forward Current 2.0 95 11025 100 10 I F – Forward Current ( mA ) 95 11027 Figure 5. Forward Current vs. Forward Voltage 1 I F=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0.1 95 10985 1 100 10 V CE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage Document Number 83512 Rev. 1.5, 02-Feb-05 TCMT1600 / TCMT4600 1.0 ton / toff –Turn on / Turn off Time ( µ s ) VCEsat– Collector Emitter Saturation Voltage (V) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 8 Non Saturated Operation V S=5V RL=100 Ω ton 6 toff 4 2 0 0 1 100 10 I C – Collector Current ( mA ) 95 11028 0 95 11030 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 10 2 4 6 10 I C – Collector Current ( mA ) Figure 13. Turn on / off Time vs. Collector Current 1000 V CE=5V 100 10 1 0.1 1 100 10 I F – Forward Current ( mA ) 95 11029 ton / toff –Turn on / Turn off Time ( µ s ) Figure 11. Current Transfer Ratio vs. Forward Current 50 Saturated Operation V S=5V RL=1k Ω 40 30 toff 20 10 ton 0 0 95 11031 5 10 15 20 I F – Forward Current ( mA ) Figure 12. Turn on / off Time vs. Forward Current Document Number 83512 Rev. 1.5, 02-Feb-05 www.vishay.com 5 TCMT1600 / TCMT4600 Vishay Semiconductors Package Dimensions in mm 16283 www.vishay.com 6 Document Number 83512 Rev. 1.5, 02-Feb-05 TCMT1600 / TCMT4600 Vishay Semiconductors Package Dimensions in mm 15226 Document Number 83512 Rev. 1.5, 02-Feb-05 www.vishay.com 7 TCMT1600 / TCMT4600 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83512 Rev. 1.5, 02-Feb-05