VISHAY K817P7

K817P/ K827PH/ K847PH
Vishay Semiconductors
Optocoupler, Phototransistor Output
Features
•
•
•
•
•
•
•
Endstackable to 2.54 mm (0.1") spacing
DC isolation test voltage VISO = 5000 VRMS
Low coupling capacitance of typical 0.3 pF
Current Transfer Ratio (CTR) selected into groups
Low temperature coefficient of CTR
Wide ambient temperature range
Available in single, dual and quad channel packages
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
C
1
A
C
4 PIN
Agency Approvals
• UL1577, File No. E76222 System Code U, Double
Protection
• CSA 93751
Applications
Programmable logic controllers, modems, answering
machines, general applications
Description
In the K817P/ K827PH/ K847PH parts each channel
consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin (single); 8 pin (dual); 16-pin (quad) plastic dual inline
package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
Document Number 83522
Rev. 1.7, 26-Oct-04
E
8 PIN
16 PIN
C
17203_1
e3
Pb
Pb-free
Order Information
Part
Remarks
K817P
CTR 50 - 600 %, DIP-4
K817P1
CTR 40 - 80 %, DIP-4
K817P2
CTR 63 - 125 %, DIP-4
K817P3
CTR 100 - 200 %, DIP-4
K817P4
CTR 160 - 320 %, DIP-4
K817P5
CTR 50 - 150 %, DIP-4
K817P6
CTR 100 - 300 %, DIP-4
K817P7
CTR 80 - 160 %, DIP-4
K817P8
CTR 130 - 260 %, DIP-4
K817P9
CTR 200 - 400 %, DIP-4
K827PH
CTR 50 - 600 %, DIP-8
K847PH
CTR 50 - 600 %, DIP-16
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K817P/ K827PH/ K847PH
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
VR
6
V
Forward current
IF
60
mA
IFSM
1.5
A
Pdiss
100
mW
Tj
125
°C
Forward surge current
Test condition
tp ≤ 10 µs
Power dissipation
Junction temperature
Unit
Output
Symbol
Value
Unit
Collector emitter voltage
Parameter
Test condition
VCEO
70
V
Emitter collector voltage
VECO
7
V
IC
50
mA
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
Junction temperature
Coupler
Parameter
AC isolation test voltage (RMS)
Test condition
t = 1 min
Symbol
Value
Unit
1)
5000
VRMS
VISO
Total power dissipation
Ptot
250
mW
Operating ambient temperature
range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Tsld
260
°C
Soldering temperature
1)
2 mm from case, t ≤ 10 s
Related to standard climate 23/50 DIN 50014
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Unit
Forward voltage
Parameter
IF = 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
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2
Test condition
Symbol
Min
pF
Document Number 83522
Rev. 1.7, 26-Oct-04
K817P/ K827PH/ K847PH
Vishay Semiconductors
Output
Symbol
Min
Collector emitter voltage
Parameter
IC = 100 µA
Test condition
VCEO
70
Typ.
Max
Unit
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
Collector dark current
VCE = 20 V, IF = 0, E = 0
ICEO
100
nA
Max
Unit
0.3
V
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Collector emitter saturation
voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
IF = 10 mA, VCE = 5 V,
RL = 100 Ω
fc
100
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
Current Transfer Ratio
Parameter
IC/IF
Test condition
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 10 mA
VCE = 5 V, IF = 5 mA
Document Number 83522
Rev. 1.7, 26-Oct-04
Part
Symbol
Min
Max
Unit
K817P
CTR
50
Typ.
600
%
K827PH
CTR
50
600
%
K847PH
CTR
50
600
%
K817P1
CTR
40
80
%
K817P2
CTR
63
125
%
K817P3
CTR
100
200
%
K817P4
CTR
160
320
%
K817P5
CTR
50
150
%
K817P6
CTR
100
300
%
K817P7
CTR
80
160
%
K817P8
CTR
130
260
%
K817P9
CTR
200
400
%
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K817P/ K827PH/ K847PH
Vishay Semiconductors
Switching Characteristics
Test condition
Symbol
Delay time
Parameter
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
td
Min
Typ.
3.0
Max
µs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
tr
3.0
µs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
tf
4.7
µs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
ts
0.3
µs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
ton
6.0
µs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
toff
5.0
µs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 2)
ton
9.0
µs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ
(see figure 2)
toff
18.0
µs
IF
0
IF
+5V
IF
IC = 2 mA; adjusted through
input amplitude
RG = 50 W
tp
= 0.01
T
tp = 50 Ps
Channel I
Channel II
50 W
100 W
Oscilloscope
RL = 1 MW
CL = 20 pF
Figure 1. Test circuit, non-saturated operation
0
IF
IF = 10 mA
96 11698
0
IC
tp
t
100%
90%
10%
0
tp
td
tr
ton (= td + tr)
95 10804
Unit
tr
td
ton
ts
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
t
tf
toff
storage time
fall time
turn-off time
Figure 3. Switching Times
+5V
IC
RG = 50 Ω
tp
= 0.01
T
tp = 50 µs
Channel I
Channel II
50 Ω
1 kΩ
Oscilloscope
RL≥ 1M Ω
CL ≤ 20 pF
95 10843
Figure 2. Test circuit, saturated operation
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Document Number 83522
Rev. 1.7, 26-Oct-04
K817P/ K827PH/ K847PH
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10000
I CEO - Collector Dark Current,
with open Base ( nA )
P tot –Total Power Dissipation ( mW)
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
V CE = 20 V
IF = 0
1000
100
10
1
0
0
40
80
Tamb – Ambient Temperature( °C )
96 11700
0
120
25
Figure 4. Total Power Dissipation vs. Ambient Temperature
50
100
75
Tamb - Ambient Temperature ( ° C )
95 11026
Figure 7. Collector Dark Current vs. Ambient Temperature
100
IC – Collector Current ( mA )
I F - Forward Current ( mA )
1000
100
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V F - Forward Voltage ( V )
10
1
0.1
0.01
0.1
0.1
96 11862
V CE=5V
100
20mA
V CE=5V
I F=5mA
IC – Collector Current ( mA)
CTRrel – Relative Current Transfer Ratio
Figure 8. Collector Current vs. Forward Current
2.0
1.5
1.0
0.5
0
–25
95 11025
100
10
I F – Forward Current ( mA )
95 11027
Figure 5. Forward Current vs. Forward Voltage
1
0
25
50
75
Tamb – Ambient Temperature ( °C )
Figure 6. Relative Current Transfer Ratio vs. Ambient
Temperature
Document Number 83522
Rev. 1.7, 26-Oct-04
I F=50mA
10mA
10
5mA
2mA
1
1mA
0.1
0.1
95 10985
1
10
100
V CE – Collector Emitter Voltage ( V )
Figure 9. Collector Current vs. Collector Emitter Voltage
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5
K817P/ K827PH/ K847PH
1.0
ton / toff –Turn on / Turn off Time ( µ s )
VCEsat– Collector Emitter Saturation Voltage (V)
Vishay Semiconductors
20%
0.8
CTR=50%
0.6
0.4
0.2
10%
8
Non Saturated
Operation
V S=5V
RL=100 Ω
ton
6
toff
4
2
0
0
1
100
10
I C – Collector Current ( mA )
95 11028
0
95 11030
Figure 10. Collector Emitter Saturation Voltage vs. Collector
Current
CTR – Current Transfer Ratio ( % )
10
2
4
10
6
I C – Collector Current ( mA )
Figure 13. Turn on / off Time vs. Collector Current
1000
V CE=5V
100
10
1
0.1
1
100
10
I F – Forward Current ( mA )
95 11029
ton / toff –Turn on / Turn off Time ( µ s )
Figure 11. Current Transfer Ratio vs. Forward Current
50
Saturated Operation
V S=5V
RL=1k Ω
40
30
toff
20
10
ton
0
0
5
10
15
20
I F – Forward Current ( mA )
95 11031
Figure 12. Turn on / off Time vs. Forward Current
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Document Number 83522
Rev. 1.7, 26-Oct-04
K817P/ K827PH/ K847PH
Vishay Semiconductors
Package Dimensions in mm
14789
Package Dimensions in mm
14784
Document Number 83522
Rev. 1.7, 26-Oct-04
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K817P/ K827PH/ K847PH
Vishay Semiconductors
Package Dimensions in mm
14783
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Document Number 83522
Rev. 1.7, 26-Oct-04
K817P/ K827PH/ K847PH
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83522
Rev. 1.7, 26-Oct-04
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