MSB1218A-- RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC--70/SOT--323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features High hFE, 210 -- 460 Low VCE(sat), < 0.5 V These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector--Base Voltage V(BR)CBO 45 Vdc Collector--Emitter Voltage V(BR)CEO 45 Vdc Emitter--Base Voltage V(BR)EBO 7.0 Vdc IC 100 mAdc IC(P) 200 mAdc Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 C Storage Temperature Range Tstg -- 55 to +150 C Collector Current -- Continuous Collector Current -- Peak 1 BASE 3 1 2 SC--70 (SOT--323) CASE 419 STYLE 4 THERMAL CHARACTERISTICS Rating 2 EMITTER MARKING DIAGRAM ELECTRICAL CHARACTERISTICS Characteristic BR M G G Symbol Min Max Unit Collector--Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 45 -- Vdc Collector--Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 45 -- Vdc Emitter--Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 -- Vdc Collector--Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 0.1 mA BR = Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Collector--Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO -- 100 mA ORDERING INFORMATION DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 2.0 mAdc) hFE1 210 340 -- VCE(sat) -- 0.5 Vdc Collector--Emitter Saturation Voltage (Note 2) (IC = 100 mAdc, IB = 10 mAdc) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR--4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms, D.C. 2%. Semiconductor Components Industries, LLC, 2010 October, 2010 -- Rev. 7 1 1 Device MSB1218A--RT1G Package Shipping† SC--70 (Pb--Free) 3000 /Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MSB1218A--RT1/D MSB1218A--RT1G PD , POWER DISSIPATION (MILLIWATTS) 250 IC, COLLECTOR CURRENT (mA) TA = 25C 200 150 100 RθJA = 833C/W 50 0 -- 50 0 50 100 300 mA 250 200 60 150 100 30 IB = 50 mA 0 3 6 9 12 TA, AMBIENT TEMPERATURE (C) VCE, COLLECTOR VOLTAGE (V) Figure 1. Derating Curve Figure 2. IC -- VCE 15 VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 VCE = 10 V TA = 25C TA = 75C DC CURRENT GAIN 90 0 150 1000 TA = -- 25C 100 10 0.1 1 10 1.5 1 0.5 0.1 1 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 3. DC Current Gain Figure 4. Collector Saturation Region 100 13 Cib, INPUT CAPACITANCE (pF) 800 700 600 500 400 300 TA = 25C VCE = 5 V 200 100 0 0.2 TA = 25C 0 0.01 100 900 COLLECTOR VOLTAGE (mV) 120 0.5 1 5 10 20 40 60 80 100 12 11 10 9 8 7 6 150 200 0 IC, COLLECTOR CURRENT (mA) 1 2 VEB (V) Figure 5. On Voltage Figure 6. Capacitance http://onsemi.com 2 3 4 MSB1218A--RT1G 14 C ob, CAPACITANCE (pF) 12 10 8 6 4 2 0 0 10 20 VCB (V) Figure 7. Capacitance http://onsemi.com 3 30 40 MSB1218A--RT1G PACKAGE DIMENSIONS SC--70 (SOT--323) CASE 419--04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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