2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications. http://onsemi.com COLLECTOR 3 Features • • • • • Lower VCE(sat)* Higher Gain (hfe)* Higher Breakdown Voltage Rating* Moisture Sensitivity Level: 1 This is a Pb−Free Device 2 BASE 1 EMITTER Benefits • Longer Battery Life • Improved Performance Through Targeted Design 3 2 MAXIMUM RATINGS (TA = 25°C) Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 5.0 Vdc IC 150 mAdc IC(P) 200 mAdc IB 30 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Rating Collector Current − Continuous Collector Current − Peak Base Current THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Specifications compared to MMBT3904. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 1 SC−59 CASE 318D STYLE 1 MARKING DIAGRAMS SCG M SCG = Specific Date Code M = Date Code ORDERING INFORMATION Device Package Shipping† 2SC2712GT1G SC−59 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2SC2712GT1/D 2SC2712GT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc Collector−Base Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO − 0.1 mAdc Emitter Cut−off Current (VEB = 5 V, IC = 0 V) IEBO − 0.1 mA Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − 0.1 2.0 1.0 mAdc mAdc mAdc DC Current Gain (Note 1) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Characteristic Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 200 400 − 0.25 80 − − 3.5 − 10 Vdc SMALL−SIGNAL CHARACTERISTICS fT Current −Gain − Bandwidth Product (IC = 1.0 mA, VCE = 10.0 V, f = 10 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo Noise Figure (IC = 0.1 mA, VCE = 6.0 Vdc, RS = 10 kW, f = 1.0 kHz, BW = 200 Hz) 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. http://onsemi.com 2 NF MHz pF dB 2SC2712GT1G PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE F A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. L 3 S 2 DIM A B C D G H J K L S B 1 D G J C INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K H MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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