BGA771N16 High Linearity Dual-Band UMTS LNA (1900/1800/2100, 800/900MHz) Data Sheet Revision 3.1, 2010-03-16 Final RF & Protection Devices Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA771N16 - Low Power Dual-Band UMTS LNA BGA771N16 Revision History: 2010-03-16, V3.1 Previous Version: 2008-08-26, V3.0 Page Subjects (major changes since last revision) all Updated package Data Sheet 3 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.9.1 2.9.2 2.10 2.10.1 2.10.2 2.10.3 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Supply current characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Measured RF Characteristics Low Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Bands V / VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Measured RF Characteristics Mid Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Bands III / IX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics UMTS Band IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured Performance Low Band (Band V) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 15 Measured Performance Low Band (Band V) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 16 Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 17 Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 19 Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 20 Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 21 Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 22 Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 24 3 3.1 3.2 3.3 3.4 3.5 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands II and V Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands III and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 4.2 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Data Sheet 4 25 25 26 27 28 29 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Description 1 Description The BGA771N16 is a highly flexible, high linearity dual-band (1900/1800/2100, 800/900 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA771N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 1800 MHz or a 2100 MHz path by optimizing the input and output matching network. Note: UMTS bands II / V is the standard band combination for this product requiring no external output matching network. Features • Gain: 16 / -7.5 dB in high / low gain mode (all bands) • Noise figure: 1.1 / 1.1 dB in high gain mode (800 MHz / 1900 MHz) • Supply current: 3.4 / 0.65 mA in high / low gain mode (all bands) • Standby mode (< 2 µA typ.) • Output internally matched to 50 Ω • Inputs pre-matched to 50 Ω • 2kV HBM ESD protection • Low external component count • Small leadless PG-TSNP-16-1 package (2.3 x 2.3 x 0.39 mm) • Pb-free (RoHS compliant) package PG-TSNP-16-1 package QF QF 9&& 9*6 5),10 5)2870 QF QF 5)*1'0 QF Figure 1 QF %LDVLQJ/RJLF &LUFXLWU\ 5),1/ 5)287/ 9(1 55() %*$1B&KLSB%O'YVG 9(1 Block diagram of dual-band LNA Type Package Marking Chip BGA771N16 PG-TSNP-16-1 BGA771 T1530 Data Sheet 5 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Absolute Maximum Ratings 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol VCC Supply current ICC Pin voltage VPIN Pin voltage RF Input Pins VRFIN RF input power PRFIN Junction temperature Tj Ambient temperature range TA Storage temperature range Tstg Supply voltage 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Max. -0.3 3.6 V 10 mA -0.3 VCC+0.3 V -0.3 0.9 V 4 dBm 150 °C -30 85 °C -65 150 °C All pins except RF input pins ≤ 37 K/W Symbol Value (typ.) Unit Note / Test Conditions VESD-HBM 2000 V All pins ESD Integrity Table 3 ESD Integrity ESD hardness HBM Min. Note / Test Condition Unit 2.3 1) Unit Value Thermal resistance junction RthJS to soldering point Parameter Values Note / Test Conditions 1) According to JESD22-A114 Data Sheet 6 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics DC Characteristics 2.4 DC Characteristics Table 4 DC Characteristics, TA = 25 °C Parameter Symbol Supply voltage VCC ICCHG Supply current high gain mode Values Min. Typ. Max. 2.7 2.8 3.0 All bands µA All bands 650 Supply current standby mode ICCOFF 0.1 Logic level high VHI VLO IENL IENH IGSL IGSH Logic currents VEN Logic currents VGS V mA ICCLG 1.5 Note / Test Condition 3.4 Supply current low gain mode Logic level low Unit 2 2.8 µA V 0.0 0.5 V 0.2 µA 10.0 µA 0.1 µA 5.0 µA 2.5 Band Select / Gain Control Truth Table Table 5 Band Select Truth Table, VCC = 2.8 V VEN1, VEN2 and VGS VEN1 and VEN2 VGS Mid band Low band Power Down VEN1 H L L VEN2 L H L Table 6 VGS Data Sheet Gain Control Truth Table, VCC = 2.8 V High Gain Low Gain H L 7 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Supply current characteristics; TA = 25 °C Supply current characteristics; TA = 25 °C 2.6 Supply current high / mid gain mode versus reference resistor RREF (see Figure 2 on page 25 for reference resistor; low gain mode supply current is independent of reference resistor). Supply Current Midband ICC = f (RREF) Supply Current Lowband ICC = f (RREF) VCC = 2.8 V 9 9 8 8 7 7 Icc [mA] Icc [mA] VCC = 2.8 V 6 5 6 5 4 4 3 3 2 1 10 2 100 RREF [kΩ] Data Sheet 1 10 100 RREF [kΩ] 8 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Logic Signal Characteristics; TA = 25 °C Logic Signal Characteristics; TA = 25 °C 2.7 Current consumption of logic inputs VEN1, VEN2, VGS Logic currents IEN1,2 = f(VEN1,2) VCC = 2.8 V Logic currents IGS = f(VGS) VCC = 2.8 V 12 6 10 4 IGS [µA] IEN1,2 [µA] 8 6 4 2 2 0 0 0.5 1 1.5 2 2.5 0 3 0 0.5 1 VEN1,2 [V] 2.8 Switching Times Table 7 Typical switching times; TA = -30 ... 85 °C Parameter 1.5 2 2.5 3 VGS [V] Symbol Values Min. Typ. Unit Note / Test Condition Max. Settling time gainstep tGS 1 µs Switching LG ↔ HG all bands Settling time bandselect tBS 1 µs Switching from any band to a different band Data Sheet 9 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Low Band 2.9 Measured RF Characteristics Low Band 2.9.1 Measured RF Characteristics UMTS Bands V / VI Table 8 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V Parameter Symbol Values Min. Typ. Unit Max. Pass band range band V 869 894 MHz Pass band range band VI 875 885 MHz Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) Output return loss1) 2) Stability factor Input compression point1) 1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Note / Test Condition ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.4 IP1dBHG IP1dBLG IIP3HG IIP3LG -6 dBm High gain mode -8 dBm Low gain mode -7 2 dBm High gain mode Low gain mode mA High gain mode 0.65 mA Low gain mode 16.1 dB High gain mode -7.5 dB Low gain mode -36 dB High gain mode -8 dB Low gain mode 1.1 dB High gain mode 7.5 dB Low gain mode -17 dB 50 Ω, high gain mode -17 dB 50 Ω, low gain mode -17 dB 50 Ω, high gain mode -13 dB 50 Ω, low gain mode >2.3 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 10 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Low Band 2.9.2 Measured RF Characteristics UMTS Band VIII Table 9 Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V Parameter Symbol Values Min. Pass band range Current consumption Gain Reverse Isolation 1) Noise figure Input return loss1) 1) Output return loss 2) Stability factor Input compression point1) 1) Typ. 925 Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Unit Note / Test Condition Max. 960 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.4 mA High gain mode 0.65 mA Low gain mode 16.1 dB High gain mode -7.1 dB Low gain mode -36 dB High gain mode -7 dB Low gain mode IP1dBHG IP1dBLG IIP3HG IIP3LG -5 dBm High gain mode -8 dBm Low gain mode -6 2 dBm High gain mode Low gain mode 1.1 dB High gain mode 7.1 dB Low gain mode -16 dB 50 Ω, high gain mode -15 dB 50 Ω, low gain mode -15 dB 50 Ω, high gain mode -16 dB 50 Ω, low gain mode >2.3 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 11 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10 Measured RF Characteristics Mid Band 2.10.1 Measured RF Characteristics UMTS Band II Table 10 Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V Parameter Symbol Values Min. Pass band range 1930 Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) 1) Output return loss 2) Stability factor Input compression point1) 1) Typ. Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Unit Note / Test Condition Max. 1990 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.4 mA High gain mode 0.65 mA Low gain mode 16.0 dB High gain mode -7.8 dB Low gain mode -35 dB High gain mode -8 dB Low gain mode 1.1 dB High gain mode 7.8 dB Low gain mode -19 dB 50 Ω, high gain mode -18 dB 50 Ω, low gain mode -20 dB 50 Ω, high gain mode -15 dB 50 Ω, low gain mode IP1dBHG IP1dBLG IIP3HG IIP3LG -7 dBm High gain mode -7 dBm Low gain mode -6 3 dBm High gain mode Low gain mode >2.4 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 12 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10.2 Measured RF Characteristics UMTS Bands III / IX Table 11 Typical Characteristics 1800 MHz Band, TA = 25 °C, VCC = 2.8 V Parameter Symbol Values Min. Typ. Unit Max. Pass band range band III 1805 1880 MHz Pass band range band IX 1844.9 1879.9 MHz Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) 1) Output return loss 2) Stability factor Input compression point1) 1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Note / Test Condition ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.4 mA High gain mode 0.65 mA Low gain mode 16.2 dB High gain mode -8.7 dB Low gain mode -36 dB High gain mode -9 dB Low gain mode 1.0 dB High gain mode 8.7 dB Low gain mode -13 dB 50 Ω, high gain mode -14 dB 50 Ω, low gain mode -19 dB 50 Ω, high gain mode -15 dB 50 Ω, low gain mode IP1dBHG IP1dBLG IIP3HG IIP3LG -7 dBm High gain mode -6 dBm Low gain mode -5 3 dBm High gain mode Low gain mode >2.5 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 13 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10.3 Measured RF Characteristics UMTS Band IV Table 12 Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V Parameter Symbol Values Min. Pass band range Current consumption Gain Reverse Isolation 1) Noise figure Input return loss1) 1) Output return loss 2) Stability factor Input compression point1) 1) Typ. 2110 Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Unit Note / Test Condition Max. 2155 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.4 mA High gain mode 0.65 mA Low gain mode 15.8 dB High gain mode -7.0 dB Low gain mode -34 dB High gain mode -7 dB Low gain mode IP1dBHG IP1dBLG IIP3HG IIP3LG -7 dBm High gain mode -4 dBm Low gain mode -4 6 dBm High gain mode Low gain mode 1.1 dB High gain mode 7 dB Low gain mode -19 dB 50 Ω, high gain mode -14 dB 50 Ω, low gain mode -19 dB 50 Ω, high gain mode -15 dB 50 Ω, low gain mode >2.3 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 14 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) High Gain Mode vs. Frequency 2.11 Measured Performance Low Band (Band V) High Gain Mode vs. Frequency TA= 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain wideband |S21| = f ( f ) 19 20 18 10 17 Power Gain [dB] Power Gain [dB] Power Gain |S21| = f ( f ) −30°C 25°C 16 85°C 15 14 13 0.86 0 −10 −20 −30 0.87 0.88 0.89 −40 0.9 0 Frequency [GHz] 2 4 6 8 10 Frequency [GHz] Gainstep HG-LG |∆S21| = f ( f ) Matching |S11| = f ( f ), |S22| = f ( f ) 0 26 25.5 −5 −10 −15 Delta Gain [dB] |S11|, |S22| [dB] 25 S11 S −20 22 24.5 24 25°C, 85°C 23.5 −30°C 23 −25 −30 0.86 22.5 0.87 0.88 0.89 22 0.86 0.9 Frequency [GHz] Data Sheet 0.87 0.88 0.89 0.9 Frequency [GHz] 15 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 0 1.5 −2 1.4 −4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 −6 −8 −10 1 −12 0.9 0.8 0.86 0.87 0.88 0.89 −14 0.86 0.9 0.87 Frequency [GHz] 2.12 0.88 0.89 0.9 Frequency [GHz] Measured Performance Low Band (Band V) High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V, f = 880 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 19 5.5 5 18 ICC [mA] Power Gain [dB] 4.5 17 16 4 3.5 15 3 14 13 −40 2.5 −20 0 20 40 60 80 2 −40 100 T [°C] 0 20 40 60 80 100 T [°C] A Data Sheet −20 A 16 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 0 −2 1.6 −4 P1dB [dBm] NF [dB] 1.4 1.2 −6 −8 1 −10 0.8 0.6 −40 −12 −20 0 20 40 60 80 −14 −40 100 −20 0 TA [°C] 2.13 20 40 60 80 100 TA [°C] Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) −5 0 −6 −10 Power Gain [dB] Power Gain [dB] −30°C −7 25°C 85°C −8 −9 −10 −11 0.86 −30 −40 −50 0.87 0.88 0.89 −60 0.9 Frequency [GHz] Data Sheet −20 0 2 4 6 8 10 Frequency [GHz] 17 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) 0 |S11|, |S22| [dB] −5 −10 S 22 −15 S 11 −20 −25 −30 0.86 0.87 0.88 0.89 0.9 Frequency [GHz] Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 0 10 −2 −4 P1dB [dBm] NF [dB] 9 8 −6 −8 7 −10 6 5 0.86 −12 0.87 0.88 0.89 −14 0.86 0.9 Frequency [GHz] Data Sheet 0.87 0.88 0.89 0.9 Frequency [GHz] 18 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature 2.14 Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, f = 880 MHz Supply Current ICC = f (TA) −5 0.8 −6 0.75 −7 0.7 ICC [mA] Power Gain [dB] Power Gain |S21| = f (TA) −8 0.65 −9 0.6 −10 0.55 −11 −40 −20 0 20 40 60 80 0.5 −40 100 −20 0 TA [°C] 20 40 60 80 100 TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 11 0 10 −2 −4 P1dB [dBm] NF [dB] 9 8 −6 −8 7 −10 6 5 −40 −12 −20 0 20 40 60 80 −14 −40 100 TA [°C] Data Sheet −20 0 20 40 60 80 100 T [°C] A 19 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency 2.15 Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V Power Gain wideband |S21| = f ( f ) 19 20 18 10 17 Power Gain [dB] Power Gain [dB] Power Gain |S21| = f ( f ) −30°C 16 25°C 85°C 15 14 13 1.93 0 −10 −20 −30 1.94 1.95 1.96 1.97 1.98 −40 1.99 0 2 Frequency [GHz] 4 6 8 10 Frequency [GHz] Gainstep HG-LG |∆S21| = f ( f ) Matching |S11| = f ( f ), |S22| = f ( f ) 0 26 25.5 −5 Delta Gain [dB] |S11|, |S22| [dB] 25 −10 −15 S11 −20 25°C 23.5 85°C 23 22 −25 22.5 1.94 1.95 1.96 1.97 1.98 22 1.93 1.99 Frequency [GHz] Data Sheet 24 −30°C S −30 1.93 24.5 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] 20 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 0 1.5 −2 1.4 −4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 −6 −8 −10 1 −12 0.9 0.8 1.93 1.94 1.95 1.96 1.97 1.98 −14 1.93 1.99 1.94 Frequency [GHz] 2.16 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V, f = 1960 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 19 5.5 5 18 ICC [mA] Power Gain [dB] 4.5 17 16 4 3.5 15 3 14 13 −40 2.5 −20 0 20 40 60 80 2 −40 100 T [°C] 0 20 40 60 80 100 T [°C] A Data Sheet −20 A 21 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 0 −2 1.6 −4 P1dB [dBm] NF [dB] 1.4 1.2 −6 −8 1 −10 0.8 0.6 −40 −12 −20 0 20 40 60 80 −14 −40 100 −20 0 TA [°C] 2.17 20 40 60 80 100 TA [°C] Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) −5 0 −6 −10 Power Gain [dB] Power Gain [dB] −30°C −7 25°C −8 85°C −9 −10 −11 1.93 −30 −40 −50 1.94 1.95 1.96 1.97 1.98 −60 1.99 Frequency [GHz] Data Sheet −20 0 2 4 6 8 10 Frequency [GHz] 22 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) 0 |S11|, |S22| [dB] −5 −10 S11 −15 S22 −20 −25 −30 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 0 10 −2 −4 P1dB [dBm] NF [dB] 9 8 −6 −8 7 −10 6 5 1.93 −12 1.94 1.95 1.96 1.97 1.98 −14 1.93 1.99 Frequency [GHz] Data Sheet 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] 23 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature 2.18 Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, f = 1960 MHz Supply Current ICC = f (TA) −5 0.8 −6 0.75 −7 0.7 ICC [mA] Power Gain [dB] Power Gain |S21| = f (TA) −8 0.65 −9 0.6 −10 0.55 −11 −40 −20 0 20 40 60 80 0.5 −40 100 −20 0 TA [°C] 20 40 60 80 100 TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 11 0 10 −2 −4 P1dB [dBm] NF [dB] 9 8 −6 −8 7 −10 6 5 −40 −12 −20 0 20 40 60 80 −14 −40 100 TA [°C] Data Sheet −20 0 20 40 60 80 100 T [°C] A 24 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram UMTS bands II and V Application Circuit Schematic 3 Application Circuit and Block Diagram 3.1 UMTS bands II and V Application Circuit Schematic C5 10nF 0 GND 5 n/c RFIN Band II 4 n/c VCC = 2.8V 3 VCC n /c 1 2 VGS C1 10pF L1 L1 3.3nH C2 22pF L1 6 RFINM 16 RFOUTM 7 n/c 9 n/c RFIN Band V 14 Biasing & Logic Circuitry 10 RFINL 11 VEN2 RFOUTL 12 VEN1 RREF 13 C3 3.0pF C4 22pF RFOUT Band II 15 n/c 8 RFGNDM Figure 2 VGS = 0 / 2.8V L2 L1 9.1nH VEN = 0 / 2.8V RFOUT Band V R REF 27k Ω VEN = 0 / 2.8V BGA771N16 _Appl _Bands25 _BlD.vsd Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 13 Parts List Part Number Part Type Manufacturer Size Comment L1 ... L2 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C5 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 25 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram UMTS bands III and VIII Application Circuit Schematic 3.2 UMTS bands III and VIII Application Circuit Schematic C5 10nF 0 GND 5 n/c RFIN Band III VCC = 2.8V 4 n/c 3 VCC V GS = 0 / 2.8V n/c 1 2 VGS L3 1.5nH C1 22pF 6 RFINM L1 4.3nHL1 RFOUTM C2 22pF 7 n/c L1 RFOUT Band III 16 C6 1.5pF 15 n/c L4 3.3nH Biasing & Logic Circuitry 9 n/c RFIN Band VIII Figure 3 10 RFINL 11 VEN 2 RFOUTL 12 VEN1RREF 13 C3 3.3 pF C4 22pF RFOUT Band VIII 14 8 RFGNDM L2 L1 8.2nH VEN = 0 / 2 .8V RREF 27kΩ VEN = 0 / 2.8V BGA771N16_ Appl_Bands 38_ BlD.vsd Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 14 Parts List Part Number Part Type Manufacturer Size Comment L1 ... L4 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C6 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 26 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram UMTS bands IV and VIII Application Circuit Schematic 3.3 UMTS bands IV and VIII Application Circuit Schematic C5 10nF 0 GND 5 n/c RFIN Band IV 4 n/c VCC = 2.8V 3 VCC VGS = 0 / 2.8V n/c 1 2 VGS L3 2.2nH C1 22pF L1 L1 3.4 nH 6 RFINM RFOUT Band IV 16 RFOUTM C2 22pF L1 7 15 n/c n/c L4 3.3nH 9 n/c RFIN Band VIII C4 22pF Figure 4 Biasing & Logic Circuitry 10 RFINL 11 VEN 2 RFOUTL 12 VEN1RREF 13 C3 3.3 pF L2 L1 8.2nH RFOUT Band VIII 14 8 RFGNDM VEN = 0 / 2.8V RREF 27kΩ VEN = 0 / 2.8V BGA771N16_ Appl_ Bands48_ BlD.vsd Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 15 Parts List Part Number Part Type Manufacturer Size Comment L1 ... L4 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C5 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 27 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram Pin Definition 3.4 Pin Definition Table 16 Pin Definition and Function Pin Number Symbol Function 0 GND Package paddle; ground connection for low band LNA and control circuity 1 n/c Not connected 2 VGS Gain step control 3 VCC Supply voltage 4 n/c Not connected 5 n/c Not connected 6 RFINM Mid band (1900/1800/2100 MHz) LNA input 7 n/c Not connected 8 RFGNDM Mid band LNA emitter ground 9 n/c Not connected 10 RFINL Low band (800/900 MHz) LNA input 11 VEN2 Band select control 12 VEN1 Band select control 13 RREF Bias current reference resistor (high gain mode) 14 RFOUTL Low band (800/900 MHz) LNA output 15 n/c Not connected 16 RFOUTM Mid band (1900/1800/2100 MHz) LNA output Data Sheet 28 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram Application Board 3.5 Application Board 7RS/D\HUWRSYLHZ 0LGGOH/D\HUWRSYLHZ %RWWRP/D\HUWRSYLHZ %*$1B$SSB%RDUGYVG Figure 5 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board size: 21 x 50 mm PP&RSSHU PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU PP)5 PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU %*$1B&URVVB6HFWLRQB9LHZYVG Figure 6 Data Sheet Cross-section view of application board 29 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram 9&& *6 5)*1'0 *1' 5)2870 QF 5)287/ (1 (1 QF 5),1/ QF 5),10 QF QF 55() QF Application Board %*$1B$SSB%RDUGBH[DFWYVG Figure 7 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 30 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Physical Characteristics Package Footprint 4 Physical Characteristics 4.1 Package Footprint Figure 8 Recommended footprint and stencil layout for the TSNP-16-1 package Data Sheet 31 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Physical Characteristics Package Dimensions 4.2 Package Dimensions Figure 9 Package outline (top, side and bottom view) Data Sheet 32 V3.1, 2010-03-16 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG