BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA915N7 Revision History Page or Item Subjects (major changes since previous revision) Revision 4.0, 2011-03-23 all “Preliminary” status removed 10, 11 Min/max limits specified for parameters ICC, |S21|2 and NF 12, 13 Application Board: Board inductance specified, Cross-section drawing updated Revision 3.0, 2010-12-07 all Preliminary data sheet 7 New marking code defined 10, 11 Electrical Characteristics specified for frequency range f = 1550 - 1615 MHz Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-02-24 Data Sheet 3 Revision 4.0, 2011-03-23 BGA915N7 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Data Sheet 4 Revision 4.0, 2011-03-23 BGA915N7 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Data Sheet Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Schematic BGA915N7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Cross-section of Application Board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outline TSNP-7-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Footprint TSNP-7-6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5 Revision 4.0, 2011-03-23 BGA915N7 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Data Sheet Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision 4.0, 2011-03-23 Silicon Germanium GPS Low Noise Amplifier BGA915N7 Features • • • • • • • • • • • • • • Insertion power gain: 15.5 dB High out of band input 3rd order intercept point: +10dBm High input 1 dB compression point: -5 dBm Low Noise Figure: 0.7 dB Low current consumption: 4.4 mA Operating frequencies: 1550 - 1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Very small TSNP-7-6 leadless package B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 3 external SMD components necessary 2 kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package 6 5 4 7 1 2 3 TSNP-7-6 Application • Suitable for all Global Navigation Satellite Systems (GNSS) like GPS, Galileo, GLONASS, COMPASS VCC BIAS PON BIAS AI AO ESD VSS DEG Figure 1 BGA915 N7_Blockdiagram .vsd Block Diagram Product Name Marking Package BGA915N7 BC TSNP-7-6 Data Sheet 7 Revision 4.0, 2011-03-23 BGA915N7 Features Description The BGA915N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 15.5 dB gain and 0.7 dB noise figure at a current consumption of 4.4 mA in the application configuration described in Chapter 3. The BGA915N7 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 DEG LNA emitter degeneration ground 2 AI LNA input 3 BIAS DC bias 4 AO LNA output 5 VCC DC Supply 6 PON Power on control 7 VSS Common on chip RF and DC ground Data Sheet 8 Revision 4.0, 2011-03-23 BGA915N7 Maximum Ratings 1 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin BIAS VBIAS -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin PON VPON -0.3 – VCC + 0.3 V – Voltage at pin VSS VSS -0.3 – 0.3 V – Current into pin VCC ICC – – 20 mA – RF input power PIN – – 0 dBm – Total power dissipation, TJ – – 72 mW – Junction temperature Ptot – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -65 – 150 °C – ESD capability all pins VESD_HBM – – 2000 V according to JESD22A-114 ESD capability all pins VESD_MM – 100 V according to JESD22A-115 TS < 129 °C2) – 1) All voltages refer to VSS-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Thermal Resistance Table 3 Thermal Resistance Parameter 1) Junction - soldering point Symbol Value Unit RthJS 291 K/W 1) For calculation of RthJA please refer to Application Note Thermal Resistance Data Sheet 9 Revision 4.0, 2011-03-23 BGA915N7 Electrical Characteristics 2 Electrical Characteristics Table 4 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.6 V – Supply current ICC 3.3 4.4 5.7 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 12 μA ON-mode – – 1 μA OFF-mode |S21| 14.3 15.5 17.2 dB NF – 0.7 1.2 dB Input return loss RLin – 11 – dB Output return loss RLout – 16 – dB 1/|S12| – 20 – dB tS – 5 – μs OFF- to ON-mode – 5 – μs ON- to OFF-mode Inband input 1 dB compression IP1dB point – -5 – dBm Inband input 3rd order intercept IIP3 point4) – +2 – dBm f1 = 1575 MHz f2 = f1 +/-1 MHz dBm f1 = 1712.7 MHz f2 = 1850 MHz Vpon Power On voltage Ipon Power On current 2 Insertion power gain Noise figure 2) 2 Reverse isolation 3) Power gain settling time Out of band input 3rd order intercept point5) IIP3oob – +10 – Stability k – >1 – 1) 2) 3) 4) 5) ZS = 50 Ω f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input Power = -30 dBm for each tone Input Power = -20 dBm for each tone Data Sheet 10 Revision 4.0, 2011-03-23 BGA915N7 Electrical Characteristics Table 5 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.6 V – Supply current ICC 3.3 4.4 5.7 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 12 μA ON-mode – – 1 μA OFF-mode |S21| 14.3 15.5 17.2 dB NF – 0.7 1.2 dB Input return loss RLin – 11 – dB Output return loss RLout – 16 – dB Reverse isolation 1/|S12|2 – 20 – dB tS – 5 – μs OFF- to ON-mode – 5 – μs ON- to OFF-mode Inband input 1 dB compression IP1dB point – -8 – dBm Inband input 3rd order intercept IIP3 point4) – +1 – dBm f1 = 1575 MHz f2 = f1 +/-1 MHz dBm f1 = 1712.7 MHz f2 = 1850 MHz Gain switch control voltage Gain switch control current Ipon 2 Insertion power gain Noise figure Vpon 2) 3) Power gain settling time Out of band input 3rd order intercept point5) IIP3oob – +10 – Stability k – >1 – 1) 2) 3) 4) 5) ZS = 50 Ω f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input Power = -30 dBm for each tone Input Power = -20 dBm for each tone Data Sheet 11 Revision 4.0, 2011-03-23 BGA915N7 Application Information 3 Application Information Application Board Configuration Microstrip Line C2 (optional) N1 BGA915N7 DEG, 1 PON, 6 AI, 2 VCC, 5 PON L2 RFin VCC L1 C3 C1 (optional) BIAS, 3 AO, 4 RFout VSS, 7 BGA 915 N7 _Schematic.vsd Figure 2 Application Schematic BGA915N7 Table 6 Bill of Materials Name Value Package Manufacturer Function C1 (optional) 1 uF 0402 Various RF block C2 (optional) 33 pF 0402 Various DC block C3 1 pF 0402 Various Input matching L1 82 nH 0402 Murata LQW type Bias feed and RF choke L2 7.3 nH 0402 Murata LQW type Input matching - - Board inductance from pin DEG to common GND TSNP-7-6 Infineon SiGe LNA Microstrip Line 550pH N1 1) BGA915N7 1) Total board inductance = inductance of the microstrip line (~500pH) + inductance of via (~50pH) Please refer to application note AN258 for more details on “realization of small inductor values on a PCB by using microstriplines”. A list of all application notes is available at http://www.infineon.com/gpslna.appnotes. Data Sheet 12 Revision 4.0, 2011-03-23 BGA915N7 Application Information BGA 915N7_Application _Board .vsd Figure 3 Drawing of Application Board Vias Vias Ro4003, 0.2mm Copper 35µm FR4,0.8mm BGA915 N7_application _board _sideview.vsd Figure 4 Data Sheet Cross-section of Application Board 13 Revision 4.0, 2011-03-23 BGA915N7 Package Information Package Information Top view Bottom view 1.26 ±0.05 0.375 +0.025 -0.015 1.16 ±0.05 1) 0.02 MAX. 0.96 ±0.05 5 6 1.4 ±0.05 0.5 ±0.05 1) 1.175 ±0.05 4 7 3 2 1 6 x 0.2 ±0.05 1) Pin 1 marking 1) Dimension applies to plated terminals Figure 5 6 x 0.225 ±0.05 1) 4 TSNP-7-6-PO V01 Package Outline TSNP-7-6 Type code 12 Date code Pin 1 marking TSNP-7-6-MK V01 Figure 6 Marking Layout (top view) 0.5 1.7 Pin 1 marking 8 4 1.6 TSNP-7-6-TP V03 Figure 7 Data Sheet Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500) 14 Revision 4.0, 2011-03-23 BGA915N7 Package Information 0.2 0.35 0.25 0.35 0.25 0.23 0.23 0.25 Copper 0.2 1.55 0.45 0.2 0.35 0.25 0.35 0.2 1.55 0.25 1.21 0.51 0.45 SMD 1.21 0.51 0.25 0.23 Solder mask Vias 0.23 Stencil apertures TSNP-7-6-FP V01 Figure 8 Data Sheet Footprint TSNP-7-6 15 Revision 4.0, 2011-03-23 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG