INFINEON BGA915N7

BGA915N7
Silicon Germanium GPS Low Noise Amplifier
Data Sheet
Revision 4.0, 2011-03-23
RF & Protection Devices
Edition 2011-03-23
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA915N7
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 4.0, 2011-03-23
all
“Preliminary” status removed
10, 11
Min/max limits specified for parameters ICC, |S21|2 and NF
12, 13
Application Board: Board inductance specified, Cross-section drawing updated
Revision 3.0, 2010-12-07
all
Preliminary data sheet
7
New marking code defined
10, 11
Electrical Characteristics specified for frequency range f = 1550 - 1615 MHz
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2011-02-24
Data Sheet
3
Revision 4.0, 2011-03-23
BGA915N7
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Data Sheet
4
Revision 4.0, 2011-03-23
BGA915N7
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Data Sheet
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Schematic BGA915N7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Cross-section of Application Board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Outline TSNP-7-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Footprint TSNP-7-6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5
Revision 4.0, 2011-03-23
BGA915N7
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Data Sheet
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision 4.0, 2011-03-23
Silicon Germanium GPS Low Noise Amplifier
BGA915N7
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Insertion power gain: 15.5 dB
High out of band input 3rd order intercept point: +10dBm
High input 1 dB compression point: -5 dBm
Low Noise Figure: 0.7 dB
Low current consumption: 4.4 mA
Operating frequencies: 1550 - 1615 MHz
Supply voltage: 1.5 V to 3.6 V
Digital on/off switch (1V logic high level)
Very small TSNP-7-6 leadless package
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Only 3 external SMD components necessary
2 kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
6
5
4
7
1
2
3
TSNP-7-6
Application
•
Suitable for all Global Navigation Satellite Systems (GNSS) like GPS, Galileo, GLONASS, COMPASS
VCC
BIAS
PON
BIAS
AI
AO
ESD
VSS
DEG
Figure 1
BGA915 N7_Blockdiagram .vsd
Block Diagram
Product Name
Marking
Package
BGA915N7
BC
TSNP-7-6
Data Sheet
7
Revision 4.0, 2011-03-23
BGA915N7
Features
Description
The BGA915N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz
to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 15.5 dB gain and 0.7 dB noise
figure at a current consumption of 4.4 mA in the application configuration described in Chapter 3. The BGA915N7
is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply
voltage.
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
Function
1
DEG
LNA emitter degeneration ground
2
AI
LNA input
3
BIAS
DC bias
4
AO
LNA output
5
VCC
DC Supply
6
PON
Power on control
7
VSS
Common on chip RF and DC ground
Data Sheet
8
Revision 4.0, 2011-03-23
BGA915N7
Maximum Ratings
1
Maximum Ratings
Table 2
Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Voltage at pin VCC
VCC
-0.3
–
3.6
V
1)
Voltage at pin AI
VAI
-0.3
–
0.9
V
–
Voltage at pin BIAS
VBIAS
-0.3
–
0.9
V
–
Voltage at pin AO
VAO
-0.3
–
VCC + 0.3
V
–
Voltage at pin PON
VPON
-0.3
–
VCC + 0.3
V
–
Voltage at pin VSS
VSS
-0.3
–
0.3
V
–
Current into pin VCC
ICC
–
–
20
mA
–
RF input power
PIN
–
–
0
dBm
–
Total power dissipation,
TJ
–
–
72
mW
–
Junction temperature
Ptot
–
–
150
°C
–
Ambient temperature range
TA
-40
–
85
°C
–
Storage temperature range
TSTG
-65
–
150
°C
–
ESD capability all pins
VESD_HBM –
–
2000
V
according to
JESD22A-114
ESD capability all pins
VESD_MM
–
100
V
according to
JESD22A-115
TS < 129 °C2)
–
1) All voltages refer to VSS-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Resistance
Table 3
Thermal Resistance
Parameter
1)
Junction - soldering point
Symbol
Value
Unit
RthJS
291
K/W
1) For calculation of RthJA please refer to Application Note Thermal Resistance
Data Sheet
9
Revision 4.0, 2011-03-23
BGA915N7
Electrical Characteristics
2
Electrical Characteristics
Table 4
Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.6
V
–
Supply current
ICC
3.3
4.4
5.7
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
5
12
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
14.3
15.5
17.2
dB
NF
–
0.7
1.2
dB
Input return loss
RLin
–
11
–
dB
Output return loss
RLout
–
16
–
dB
1/|S12|
–
20
–
dB
tS
–
5
–
μs
OFF- to ON-mode
–
5
–
μs
ON- to OFF-mode
Inband input 1 dB compression IP1dB
point
–
-5
–
dBm
Inband input 3rd order intercept IIP3
point4)
–
+2
–
dBm
f1 = 1575 MHz
f2 = f1 +/-1 MHz
dBm
f1 = 1712.7 MHz
f2 = 1850 MHz
Vpon
Power On voltage
Ipon
Power On current
2
Insertion power gain
Noise figure
2)
2
Reverse isolation
3)
Power gain settling time
Out of band input 3rd order
intercept point5)
IIP3oob
–
+10
–
Stability
k
–
>1
–
1)
2)
3)
4)
5)
ZS = 50 Ω
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
Input Power = -30 dBm for each tone
Input Power = -20 dBm for each tone
Data Sheet
10
Revision 4.0, 2011-03-23
BGA915N7
Electrical Characteristics
Table 5
Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.6
V
–
Supply current
ICC
3.3
4.4
5.7
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
5
12
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
14.3
15.5
17.2
dB
NF
–
0.7
1.2
dB
Input return loss
RLin
–
11
–
dB
Output return loss
RLout
–
16
–
dB
Reverse isolation
1/|S12|2
–
20
–
dB
tS
–
5
–
μs
OFF- to ON-mode
–
5
–
μs
ON- to OFF-mode
Inband input 1 dB compression IP1dB
point
–
-8
–
dBm
Inband input 3rd order intercept IIP3
point4)
–
+1
–
dBm
f1 = 1575 MHz
f2 = f1 +/-1 MHz
dBm
f1 = 1712.7 MHz
f2 = 1850 MHz
Gain switch control voltage
Gain switch control current
Ipon
2
Insertion power gain
Noise figure
Vpon
2)
3)
Power gain settling time
Out of band input 3rd order
intercept point5)
IIP3oob
–
+10
–
Stability
k
–
>1
–
1)
2)
3)
4)
5)
ZS = 50 Ω
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
Input Power = -30 dBm for each tone
Input Power = -20 dBm for each tone
Data Sheet
11
Revision 4.0, 2011-03-23
BGA915N7
Application Information
3
Application Information
Application Board Configuration
Microstrip
Line
C2
(optional)
N1
BGA915N7
DEG, 1
PON, 6
AI, 2
VCC, 5
PON
L2
RFin
VCC
L1
C3
C1
(optional)
BIAS, 3
AO, 4
RFout
VSS, 7
BGA 915 N7 _Schematic.vsd
Figure 2
Application Schematic BGA915N7
Table 6
Bill of Materials
Name
Value
Package
Manufacturer
Function
C1 (optional)
1 uF
0402
Various
RF block
C2 (optional)
33 pF
0402
Various
DC block
C3
1 pF
0402
Various
Input matching
L1
82 nH
0402
Murata LQW type
Bias feed and RF choke
L2
7.3 nH
0402
Murata LQW type
Input matching
-
-
Board inductance from pin
DEG to common GND
TSNP-7-6
Infineon
SiGe LNA
Microstrip Line 550pH
N1
1)
BGA915N7
1) Total board inductance = inductance of the microstrip line (~500pH) + inductance of via (~50pH)
Please refer to application note AN258 for more details on “realization of small inductor values on a PCB by using
microstriplines”.
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Data Sheet
12
Revision 4.0, 2011-03-23
BGA915N7
Application Information
BGA 915N7_Application _Board .vsd
Figure 3
Drawing of Application Board
Vias
Vias
Ro4003, 0.2mm
Copper
35µm
FR4,0.8mm
BGA915 N7_application _board _sideview.vsd
Figure 4
Data Sheet
Cross-section of Application Board
13
Revision 4.0, 2011-03-23
BGA915N7
Package Information
Package Information
Top view
Bottom view
1.26 ±0.05
0.375 +0.025
-0.015
1.16 ±0.05 1)
0.02 MAX.
0.96 ±0.05
5
6
1.4 ±0.05
0.5 ±0.05 1)
1.175 ±0.05
4
7
3
2
1
6 x 0.2 ±0.05 1)
Pin 1 marking
1) Dimension applies to plated terminals
Figure 5
6 x 0.225 ±0.05 1)
4
TSNP-7-6-PO V01
Package Outline TSNP-7-6
Type code
12
Date code
Pin 1 marking
TSNP-7-6-MK V01
Figure 6
Marking Layout (top view)
0.5
1.7
Pin 1 marking
8
4
1.6
TSNP-7-6-TP V03
Figure 7
Data Sheet
Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500)
14
Revision 4.0, 2011-03-23
BGA915N7
Package Information
0.2
0.35
0.25
0.35
0.25
0.23
0.23
0.25
Copper
0.2
1.55
0.45
0.2
0.35
0.25
0.35
0.2
1.55
0.25
1.21
0.51
0.45
SMD
1.21
0.51
0.25
0.23
Solder mask
Vias
0.23
Stencil apertures
TSNP-7-6-FP V01
Figure 8
Data Sheet
Footprint TSNP-7-6
15
Revision 4.0, 2011-03-23
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Published by Infineon Technologies AG