Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA (2100, 1900/2100, 800/900 MHz) RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA736L16 - Tri-Band HSDPA LNA BGA736L16 Revision History: 2008-07-03, V2.1 Previous Version: 2008-02-27, V2.0 Page Subjects (major changes since last revision) 5, 6 Updated HBM ESD protection 11 Added RF characteristics for UMTS band VIII 13 Added RF characteristics for UMTS band IV 39 Added application circuit schematic for UMTS bands I, IV and VIII all Updated values for high and mid gain currents Data Sheet 3 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.9.1 2.9.2 2.10 2.10.1 2.10.2 2.11 2.11.1 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.21 2.22 2.23 2.24 2.25 2.26 2.27 2.28 2.29 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Supply current characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Measured RF Characteristics Low Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Band V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Measured RF Characteristics Mid Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Band IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics High Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured RF Characteristics UMTS Band I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured Performance Low Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Measured Performance Low Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 16 Measured Performance Low Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Measured Performance Low Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 19 Measured Performance Low Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Measured Performance Low Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 21 Measured Performance Mid Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Measured Performance Mid Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 24 Measured Performance Mid Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Measured Performance Mid Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 26 Measured Performance Mid Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Measured Performance Mid Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 29 Measured Performance High Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . 30 Measured Performance High Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . 31 Measured Performance High Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Measured Performance High Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 34 Measured Performance High Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Measured Performance High Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 36 3 3.1 3.2 3.3 3.4 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands I, II and V Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands I, IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 4.2 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Data Sheet 4 38 38 39 40 41 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Description 1 Description The BGA736L16 is a highly flexible, tri-gain mode, and tri-band (2100, 1900/2100, 800/900 MHz) MMIC low noise amplifier for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA736L16 features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-chip and matching off chip. While two gain modes are common in W-CDMA systems, a third gain mode has been introduced to reduce the LNA gain just enough to pass adjacent channel tests without compromising on HSDPA performance. The 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input matching and using an additional external output matching network. This document specifies device performance for the band combinations - UMTS bands I / II / V and UMTS bands I / IV / VIII. Features • Gain: 16 / 3 / -8 dB in high / mid / low gain mode • Noise figure: 1.1 dB in high gain mode • Supply current: 5.3 / 5.3 / 0.85 mA in high / mid / low gain modes • Standby mode current consumption < 2 µA • Outputs internally matched to 50 Ω • 2 kV HBM ESD protection • Low external component count • Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm) • Pb-free (RoHS compliant) package TSLP-16-1 package QF 5)*1'+ 9&& 9*6 9*6 5),10 5)2870 5),1+ 5)287+ 5)*1'0 Figure 1 QF %LDVLQJ/RJLF &LUFXLWU\ 5),1/ 9(1 5)287/ 9(1 55() Block diagram of triple-band LNA Type Package Marking Chip BGA736L16 PG-TSLP-16-1 BGA736 T1540 Data Sheet 5 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Absolute Maximum Ratings 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol VCC Supply current ICC Pin voltage VPIN Pin voltage RF input pins VRFIN RF input power PRFIN Junction temperature Tj Ambient temperature range TA Storage temperature range TSTG Supply voltage 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Thermal resistance junction RthJS to soldering point 2.3 ESD Integrity Table 3 ESD Integrity Parameter Symbol Values Unit Min. Max. -0.3 3.6 V 10 mA -0.3 VCC +0.3 V -0.3 0.9 V 4 dBm 150 °C -30 85 °C -65 150 °C Note / Test Condition All pins except RF input pins Value Unit Note / Test Conditions ≤ 110 K/W Value Unit Note / Test Conditions V All pins Typ. ESD hardness HBM 1) VESD-HBM 2000 1) According to JESD22-A114 Data Sheet 6 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics DC Characteristics 2.4 DC Characteristics Table 4 DC Characteristics, TA = 25 °C Parameter Symbol VCC Supply current high and mid ICCHG gain mode ICCMG Supply voltage Values Min. Typ. Max. 2.7 2.8 3.0 -30°C 25°C 85°C mA mA mA µA ICCLG 850 Supply current standby mode ICCOFF 0.1 Logic level high VHI VLOW IENL IENH IGSL IGSH Logic currents VEN Logic currents VGS 1.5 2.8 V 0.5 µA 10.0 µA 0.1 µA 5.0 µA Band Select / Gain Control Truth Table Table 5 Band Select Truth Table, VCC = 2.8 V All bands VEN1 and VEN2 V 0.2 2.5 All bands Supply current is proportional to absolute temperature µA 2 0.0 Note / Test Condition V 4.3 5.3 6.4 Supply current low gain mode Logic level low Unit VEN1 and VEN2 VGS High band Mid band Low band Standby mode VEN1 H H L L VEN2 H L H L Table 6 Gain Control Truth Table, VCC = 2.8 V High Gain Mid Gain Low Gain VGS1 H H L VGS2 L H L Data Sheet 7 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Supply current characteristics; TA = 25 °C Supply current characteristics; TA = 25 °C 2.6 Supply current high / mid gain mode versus reference resistor RREF (see Figure 2 on page 38 for reference resistor; low gain mode supply current is independent of reference resistor). Supply Current Highband ICC = f (RREF) Supply Current Midband ICC = f (RREF) VCC = 2.8 V 9 9 8 8 7 7 Icc [mA] Icc [mA] VCC = 2.8 V 6 5 6 5 4 4 3 3 2 1 10 2 100 RREF [kΩ] 1 10 100 RREF [kΩ] Supply Current Lowband ICC = f (RREF) VCC = 2.8 V 9 8 Icc [mA] 7 6 5 4 3 2 1 10 100 RREF [kΩ] Data Sheet 8 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Logic Signal Characteristics; TA = 25 °C Logic Signal Characteristics; TA = 25 °C 2.7 Current consumption of logic inputs VEN1, VEN2, VGS1, VGS2 Logic Currents IEN1,2 = f (VEN1,2) VCC = 2.8 V Logic Currents IGS1,2 = f (VGS1,2) VCC = 2.8 V 12 6 10 4 IGS1,2 [µA] IEN1,2 [µA] 8 6 4 2 2 0 0 0.5 1 1.5 2 2.5 0 3 0 0.5 1 VEN1,2 [V] 2.8 Switching Times Table 7 Typical switching times; TA = -30 ... 85 °C Parameter 1.5 2 2.5 3 VGS1,2 [V] Symbol Values Min. Typ. Unit Note / Test Condition Max. Settling time gainstep tGS 1 µs Switching from any gain mode to a different gain mode; all bands Settling time bandselect tBS 1.6 µs Switching from any band to a different band; all gain modes Data Sheet 9 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured RF Characteristics Low Band 2.9 Measured RF Characteristics Low Band 2.9.1 Measured RF Characteristics UMTS Band V Table 8 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ Parameter Symbol Values Min. Pass band range 869 Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) 1) Output return loss 2) Stability factor Input compression point1) 1) Typ. Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -25 dBm Unit Note / Test Condition Max. 894 MHz ICCHG ICCMG ICCLG S21HG S21MG S21LG S12HG S12MG S12LG NFHG NFMG NFLG S11HG S11MG S11LG S22HG S22MG S22LG k 5.20 mA High gain mode 5.20 mA Mid gain mode IP1dBHG IP1dBMG IP1dBLG IIP3HG IIP3MG IIP3LG -11 dBm High gain mode -10 dBm Mid gain mode -12 dBm Low gain mode -5 -5 -3 dBm High gain mode Mid gain mode Low gain mode 0.85 mA Low gain mode 15.5 dB High gain mode 3.0 dB Mid gain mode -8.9 dB Low gain mode -38 dB High gain mode -40 dB Mid gain mode -9 dB Low gain mode 1.1 dB High gain mode 2.4 dB Mid gain mode 9.0 dB Low gain mode -14 dB 50 Ω, high gain mode -12 dB 50 Ω, mid gain mode -10 dB 50 Ω, low gain mode -20 dB 50 Ω, high gain mode -22 dB 50 Ω, mid gain mode -18 dB 50 Ω, low gain mode >3.1 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 10 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured RF Characteristics Low Band 2.9.2 Measured RF Characteristics UMTS Band VIII Table 9 Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ Parameter Symbol Values Min. Pass band range Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) Output return loss1) 2) Stability factor Input compression point1) 1) Typ. 925 Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -25 dBm Unit Note / Test Condition Max. 960 MHz ICCHG ICCMG ICCLG S21HG S21MG S21LG S12HG S12MG S12LG NFHG NFMG NFLG S11HG S11MG S11LG S22HG S22MG S22LG k 5.20 mA High gain mode 5.20 mA Mid gain mode 0.85 mA Low gain mode 15.2 dB High gain mode 2.8 dB Mid gain mode -8.8 dB Low gain mode -37 dB High gain mode -39 dB Mid gain mode -9 dB Low gain mode 1.2 dB High gain mode 2.6 dB Mid gain mode 9.0 dB Low gain mode -14 dB 50 Ω, high gain mode -12 dB 50 Ω, mid gain mode -11 dB 50 Ω, low gain mode -20 dB 50 Ω, high gain mode -19 dB 50 Ω, mid gain mode -19 dB 50 Ω, low gain mode IP1dBHG IP1dBMG IP1dBLG IIP3HG IIP3MG IIP3LG -9 dBm High gain mode -5 dBm Mid gain mode -11 dBm Low gain mode -5 -5 -3 dBm High gain mode Mid gain mode Low gain mode >3.4 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 11 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10 Measured RF Characteristics Mid Band 2.10.1 Measured RF Characteristics UMTS Band II Table 10 Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ Parameter Symbol Values Min. Pass band range 1930 Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) 1) Output return loss 2) Stability factor Input compression point1) 1) Typ. Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -26 dBm Unit Note / Test Condition Max. 1990 MHz ICCHG ICCMG ICCLG S21HG S21MG S21LG S12HG S12MG S12LG NFHG NFMG NFLG S11HG S11MG S11LG S22HG S22MG S22LG k 5.30 mA High gain mode 5.30 mA Mid gain mode IP1dBHG IP1dBMG IP1dBLG IIP3HG IIP3MG IIP3LG -13 dBm High gain mode -13 dBm Mid gain mode -7 dBm Low gain mode -5 -6 2 dBm High gain mode Mid gain mode Low gain mode 0.85 mA Low gain mode 16.1 dB High gain mode 2.7 dB Mid gain mode -8.1 dB Low gain mode -35 dB High gain mode -36 dB Mid gain mode -8 dB Low gain mode 1.0 dB High gain mode 2.3 dB Mid gain mode 7.8 dB Low gain mode -15 dB 50 Ω, high gain mode -12 dB 50 Ω, mid gain mode -11 dB 50 Ω, low gain mode -19 dB 50 Ω, high gain mode -18 dB 50 Ω, mid gain mode -18 dB 50 Ω, low gain mode >2.6 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 12 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10.2 Measured RF Characteristics UMTS Band IV Table 11 Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ Parameter Symbol Values Min. Pass band range Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) Output return loss1) 2) Stability factor Input compression point1) 1) Typ. 2110 Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -26 dBm Unit Note / Test Condition Max. 2155 MHz ICCHG ICCMG ICCLG S21HG S21MG S21LG S12HG S12MG S12LG NFHG NFMG NFLG S11HG S11MG S11LG S22HG S22MG S22LG k 5.30 mA High gain mode 5.30 mA Mid gain mode 0.85 mA Low gain mode 15.3 dB High gain mode 2.3 dB Mid gain mode -7.5 dB Low gain mode -34 dB High gain mode -35 dB Mid gain mode -8 dB Low gain mode 1.1 dB High gain mode 2.7 dB Mid gain mode 7.5 dB Low gain mode -19 dB 50 Ω, high gain mode -14 dB 50 Ω, mid gain mode -12 dB 50 Ω, low gain mode -18 dB 50 Ω, high gain mode -17 dB 50 Ω, mid gain mode -15 dB 50 Ω, low gain mode IP1dBHG IP1dBMG IP1dBLG IIP3HG IIP3MG IIP3LG -12 dBm High gain mode -12 dBm Mid gain mode -6 dBm Low gain mode -5 -6 2 dBm High gain mode Mid gain mode Low gain mode >2.6 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 13 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured RF Characteristics High Band 2.11 Measured RF Characteristics High Band 2.11.1 Measured RF Characteristics UMTS Band I Table 12 Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 8.2 kΩ Parameter Symbol Values Min. Pass band range 2110 Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) 1) Output return loss 2) Stability factor Input compression point1) 1) Typ. Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -27 dBm Unit Note / Test Condition Max. 2170 MHz ICCHG ICCMG ICCLG S21HG S21MG S21LG S12HG S12MG S12LG NFHG NFMG NFLG S11HG S11MG S11LG S22HG S22MG S22LG k 5.30 mA High gain mode 5.30 mA Mid gain mode IP1dBHG IP1dBMG IP1dBLG IIP3HG IIP3MG IIP3LG -13 dBm High gain mode -13 dBm Mid gain mode -7 dBm Low gain mode -5 -5 2 dBm High gain mode Mid gain mode Low gain mode 0.85 mA Low gain mode 16.2 dB High gain mode 2.3 dB Mid gain mode -8.0 dB Low gain mode -35 dB High gain mode -36 dB Mid gain mode -8 dB Low gain mode 1.0 dB High gain mode 2.6 dB Mid gain mode 7.9 dB Low gain mode -13 dB 50 Ω, high gain mode -12 dB 50 Ω, mid gain mode -10 dB 50 Ω, low gain mode -19 dB 50 Ω, high gain mode -24 dB 50 Ω, mid gain mode -14 dB 50 Ω, low gain mode >2.2 DC to 10 GHz; all gain modes 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 14 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Low Band High Gain Mode vs. Frequency 2.12 Measured Performance Low Band High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) 17 20 10 16.5 Power Gain [dB] Power Gain [dB] 0 16 −30°C 15.5 25°C 85°C 15 −10 −20 −30 −40 14.5 14 0.86 −50 0.87 0.88 0.89 −60 0.9 0 2 Frequency [GHz] 4 6 8 10 8 10 Frequency [GHz] Matching |S11| = f( f ), |S22| = f( f ) Reverse Isolation |S12| = f( f ) 0 0 −5 −10 −20 S 11 −15 |S12| [dB] |S11|, |S22| [dB] −10 S 22 −30 −20 −40 −25 −50 −30 −35 0.86 0.87 0.88 0.89 −60 0.9 Frequency [GHz] Data Sheet 0 2 4 6 Frequency [GHz] 15 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Low Band High Gain Mode vs. Temperature Noise Figure NF = f( f ) Input Compression P1dB = f( f ) 1.7 −10 1.6 1.5 −11 1.4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 1 −12 −13 0.9 −14 0.8 0.7 0.6 0.86 0.87 0.88 0.89 −15 0.86 0.9 0.87 Frequency [GHz] 2.13 0.88 0.89 0.9 Frequency [GHz] Measured Performance Low Band High Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) 18 7 17.5 6.5 6 16.5 ICC [mA] Power Gain [dB] 17 16 5.5 15.5 5 15 4.5 14.5 14 −40 −20 0 20 40 60 80 4 −40 100 T [°C] 0 20 40 60 80 100 T [°C] A Data Sheet −20 A 16 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Low Band Mid Gain Mode vs. Frequency Noise Figure NF = f(TA) Input Compression P1dB = f(TA) 1.7 −5 1.6 1.5 −7 1.4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 1 −9 −11 0.9 −13 0.8 0.7 0.6 −40 −20 0 20 40 60 80 −15 −40 100 −20 0 TA [°C] 2.14 20 40 60 80 100 TA [°C] Measured Performance Low Band Mid Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) 4 10 0 3.5 −10 Power Gain [dB] Power Gain [dB] −30°C 3 25°C 85°C 2.5 2 −20 −30 −40 1.5 1 0.86 −50 0.87 0.88 0.89 −60 0.9 Frequency [GHz] Data Sheet 0 2 4 6 8 10 Frequency [GHz] 17 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Low Band Mid Gain Mode vs. Frequency Matching |S11| = f( f ), |S22| = f( f ) Reverse Isolation |S12| = f( f ) 0 0 −5 −10 −20 S |S12| [dB] |S11|, |S22| [dB] −10 11 −15 −30 S 22 −20 −40 −25 −50 −30 −35 0.86 0.87 0.88 0.89 −60 0.9 0 Frequency [GHz] 2 4 6 8 10 Frequency [GHz] Noise Figure NF = f( f ) Input Compression P1dB = f( f ) 3.5 −8 3.3 −9 3.1 −10 P1dB [dBm] NF [dB] 2.9 2.7 2.5 2.3 2.1 −11 −12 −13 1.9 −14 1.7 1.5 0.86 0.87 0.88 0.89 −15 0.86 0.9 Frequency [GHz] Data Sheet 0.87 0.88 0.89 0.9 Frequency [GHz] 18 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Low Band Mid Gain Mode vs. Temperature 2.15 Measured Performance Low Band Mid Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) 5 7 4.5 6.5 3.5 6 3 ICC [mA] Power Gain [dB] 4 2.5 2 5.5 5 1.5 1 4.5 0.5 0 −40 −20 0 20 40 60 80 4 −40 100 −20 0 TA [°C] 20 40 60 80 100 60 80 100 TA [°C] Noise Figure NF = f(TA) Input Compression P1dB = f(TA) 3.5 −5 3.3 −7 3.1 −9 P1dB [dBm] NF [dB] 2.9 2.7 2.5 2.3 −11 −13 2.1 1.9 −15 1.7 1.5 −40 −20 0 20 40 60 80 −17 −40 100 T [°C] Data Sheet −20 0 20 40 T [°C] A A 19 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Low Band Low Gain Mode vs. Frequency 2.16 Measured Performance Low Band Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) −7 0 −7.5 −10 −20 Power Gain [dB] Power Gain [dB] −8 −8.5 −30°C, 25°C −9 85°C −9.5 −40 −50 −10 −60 −10.5 −11 0.86 −30 0.87 0.88 0.89 −70 0.9 0 2 Frequency [GHz] 4 6 8 10 8 10 Frequency [GHz] Matching |S11| = f( f ), |S22| = f( f ) Reverse Isolation |S12| = f( f ) 0 0 −5 −10 S 11 −20 |S12| [dB] |S11|, |S22| [dB] −10 −15 −30 S22 −20 −40 −25 −50 −30 −35 0.86 0.87 0.88 0.89 −60 0.9 Frequency [GHz] Data Sheet 0 2 4 6 Frequency [GHz] 20 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Low Band Low Gain Mode vs. Temperature Input Compression P1dB = f( f ) 11 −5 10.5 −6 10 −7 9.5 −8 P1dB [dBm] NF [dB] Noise Figure NF = f( f ) 9 8.5 −9 −10 8 −11 7.5 −12 7 0.86 0.87 0.88 0.89 −13 0.86 0.9 0.87 Frequency [GHz] 2.17 0.88 0.89 0.9 Frequency [GHz] Measured Performance Low Band Low Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −7 1 −7.5 0.95 0.9 −8.5 ICC [mA] Power Gain [dB] −8 −9 0.85 −9.5 0.8 −10 0.75 −10.5 −11 −40 −20 0 20 40 60 80 0.7 −40 100 T [°C] 0 20 40 60 80 100 T [°C] A Data Sheet −20 A 21 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band High Gain Mode vs. Frequency Input Compression P1dB = f(TA) 11 −2 10.5 −4 10 −6 9.5 −8 P1dB [dBm] NF [dB] Noise Figure NF = f(TA) 9 8.5 −10 −12 8 −14 7.5 −16 7 −40 −20 0 20 40 60 80 −18 −40 100 −20 0 TA [°C] 2.18 20 40 60 80 100 TA [°C] Measured Performance Mid Band High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) 17 20 10 16.5 0 Power Gain [dB] Power Gain [dB] −30°C 16 25°C 15.5 85°C 15 −10 −20 −30 −40 14.5 14 1.93 −50 1.94 1.95 1.96 1.97 1.98 −60 1.99 Frequency [GHz] Data Sheet 0 2 4 6 8 10 Frequency [GHz] 22 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band High Gain Mode vs. Frequency Matching |S11| = f( f ), |S22| = f( f ) Reverse Isolation |S12| = f( f ) 0 0 −5 −10 −20 S11 −15 |S12| [dB] |S11|, |S22| [dB] −10 −30 S22 −20 −40 −25 −50 −30 −35 1.93 1.94 1.95 1.96 1.97 1.98 −60 1.99 0 2 Frequency [GHz] 4 6 8 10 Frequency [GHz] Noise Figure NF = f( f ) Input Compression P1dB = f( f ) 1.7 −10 1.6 1.5 −11 1.4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 1 −12 −13 0.9 −14 0.8 0.7 0.6 1.93 1.94 1.95 1.96 1.97 1.98 −15 1.93 1.99 Frequency [GHz] Data Sheet 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] 23 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band High Gain Mode vs. Temperature 2.19 Measured Performance Mid Band High Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) 18 7 17.5 6.5 6 16.5 ICC [mA] Power Gain [dB] 17 16 5.5 15.5 5 15 4.5 14.5 14 −40 −20 0 20 40 60 80 4 −40 100 −20 0 TA [°C] 20 40 60 80 100 60 80 100 TA [°C] Noise Figure NF = f(TA) Input Compression P1dB = f(TA) 1.7 −5 1.6 1.5 −7 1.4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 1 −9 −11 0.9 −13 0.8 0.7 0.6 −40 −20 0 20 40 60 80 −15 −40 100 T [°C] Data Sheet −20 0 20 40 T [°C] A A 24 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band Mid Gain Mode vs. Frequency 2.20 Measured Performance Mid Band Mid Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) 4 10 0 3.5 −10 Power Gain [dB] Power Gain [dB] −30°C 3 25°C 2.5 2 85°C −30 −40 1.5 1 1.93 −20 −50 1.94 1.95 1.96 1.97 1.98 −60 1.99 0 2 Frequency [GHz] Matching |S11| = f( f ), |S22| = f( f ) 6 8 10 8 10 Reverse Isolation |S12| = f( f ) 0 0 −5 −10 −10 S11 −20 |S12| [dB] |S11|, |S22| [dB] 4 Frequency [GHz] −15 S22 −30 −20 −40 −25 −50 −30 −35 1.93 1.94 1.95 1.96 1.97 1.98 −60 1.99 Frequency [GHz] Data Sheet 0 2 4 6 Frequency [GHz] 25 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band Mid Gain Mode vs. Temperature Noise Figure NF = f( f ) Input Compression P1dB = f( f ) 3.5 −8 3.3 −9 3.1 −10 P1dB [dBm] NF [dB] 2.9 2.7 2.5 2.3 2.1 −11 −12 −13 1.9 −14 1.7 1.5 1.93 1.94 1.95 1.96 1.97 1.98 −15 1.93 1.99 1.94 Frequency [GHz] 2.21 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Measured Performance Mid Band Mid Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) 5 7 4.5 6.5 3.5 6 3 ICC [mA] Power Gain [dB] 4 2.5 2 5.5 5 1.5 1 4.5 0.5 0 −40 −20 0 20 40 60 80 4 −40 100 T [°C] 0 20 40 60 80 100 T [°C] A Data Sheet −20 A 26 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band Low Gain Mode vs. Frequency Noise Figure NF = f(TA) Input Compression P1dB = f(TA) 3.5 −5 3.3 −7 3.1 −9 P1dB [dBm] NF [dB] 2.9 2.7 2.5 2.3 −11 −13 2.1 1.9 −15 1.7 1.5 −40 −20 0 20 40 60 80 −17 −40 100 −20 0 TA [°C] 2.22 20 40 60 80 100 TA [°C] Measured Performance Mid Band Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) −6 0 −6.5 −10 −20 −7.5 Power Gain [dB] Power Gain [dB] −7 −30°C 25°C −8 85°C −8.5 −60 −9.5 1.94 1.95 1.96 1.97 1.98 −70 1.99 Frequency [GHz] Data Sheet −40 −50 −9 −10 1.93 −30 0 2 4 6 8 10 Frequency [GHz] 27 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band Low Gain Mode vs. Frequency Matching |S11| = f( f ), |S22| = f( f ) Reverse Isolation |S12| = f( f ) 0 0 −5 −10 S11 −20 |S12| [dB] |S11|, |S22| [dB] −10 −15 −30 S 22 −20 −40 −25 −50 −30 −35 1.93 1.94 1.95 1.96 1.97 1.98 −60 1.99 0 2 Frequency [GHz] 10 −5 9.5 −6 9 −7 8.5 −8 8 7.5 6.5 −12 1.96 1.97 1.98 −13 1.93 1.99 Frequency [GHz] Data Sheet 10 −10 −11 1.95 8 −9 7 1.94 6 Input Compression P1dB = f( f ) P1dB [dBm] NF [dB] Noise Figure NF = f( f ) 6 1.93 4 Frequency [GHz] 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] 28 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance Mid Band Low Gain Mode vs. Temperature 2.23 Measured Performance Mid Band Low Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) −6 1 −6.5 0.95 0.9 −7.5 ICC [mA] Power Gain [dB] −7 −8 0.85 −8.5 0.8 −9 0.75 −9.5 −10 −40 −20 0 20 40 60 80 0.7 −40 100 −20 0 TA [°C] 9.5 −4 9 −6 8.5 −8 P1dB [dBm] NF [dB] −2 8 7.5 100 60 80 100 −12 −14 6.5 −16 20 40 60 80 −18 −40 100 T [°C] −20 0 20 40 T [°C] A Data Sheet 80 −10 7 0 60 Input Compression P1dB = f(TA) 10 −20 40 TA [°C] Noise Figure NF = f(TA) 6 −40 20 A 29 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band High Gain Mode vs. Frequency 2.24 Measured Performance High Band High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) 17 20 10 16.5 −30°C 0 Power Gain [dB] Power Gain [dB] 25°C 16 85°C 15.5 15 −10 −20 −30 −40 14.5 14 2.11 −50 2.12 2.13 2.14 2.15 2.16 −60 2.17 0 2 Frequency [GHz] Matching |S11| = f( f ), |S22| = f( f ) 6 8 10 8 10 Reverse Isolation |S12| = f( f ) 0 0 −5 −10 −10 S −20 11 |S12| [dB] |S11|, |S22| [dB] 4 Frequency [GHz] −15 −30 S22 −20 −40 −25 −50 −30 −35 2.11 2.12 2.13 2.14 2.15 2.16 −60 2.17 Frequency [GHz] Data Sheet 0 2 4 6 Frequency [GHz] 30 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band High Gain Mode vs. Temperature Noise Figure NF = f( f ) Input Compression P1dB = f( f ) 1.7 −10 1.6 1.5 −11 1.4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 1 −12 −13 0.9 −14 0.8 0.7 0.6 2.11 2.12 2.13 2.14 2.15 2.16 −15 2.11 2.17 2.12 Frequency [GHz] 2.25 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Measured Performance High Band High Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) 18 7 17.5 6.5 6 16.5 ICC [mA] Power Gain [dB] 17 16 5.5 15.5 5 15 4.5 14.5 14 −40 −20 0 20 40 60 80 4 −40 100 T [°C] 0 20 40 60 80 100 T [°C] A Data Sheet −20 A 31 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band Mid Gain Mode vs. Frequency Noise Figure NF = f(TA) Input Compression P1dB = f(TA) 1.7 −5 1.6 1.5 −7 1.4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 1 −9 −11 0.9 −13 0.8 0.7 0.6 −40 −20 0 20 40 60 80 −15 −40 100 −20 0 TA [°C] 2.26 20 40 60 80 100 TA [°C] Measured Performance High Band Mid Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) 4 10 0 3.5 Power Gain [dB] Power Gain [dB] −10 3 −30°C 2.5 25°C 2 1.5 −50 2.12 2.13 2.14 2.15 2.16 −60 2.17 Frequency [GHz] Data Sheet −30 −40 85°C 1 2.11 −20 0 2 4 6 8 10 Frequency [GHz] 32 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band Mid Gain Mode vs. Frequency Matching |S11| = f( f ), |S22| = f( f ) Reverse Isolation |S12| = f( f ) 0 0 −5 −10 −20 S11 −15 |S12| [dB] |S11|, |S22| [dB] −10 −30 S 22 −20 −40 −25 −50 −30 −35 2.11 2.12 2.13 2.14 2.15 2.16 −60 2.17 0 2 Frequency [GHz] 4 6 8 10 Frequency [GHz] Noise Figure NF = f( f ) Input Compression P1dB = f( f ) 3.5 −8 3.3 −9 3.1 −10 P1dB [dBm] NF [dB] 2.9 2.7 2.5 2.3 2.1 −11 −12 −13 1.9 −14 1.7 1.5 2.11 2.12 2.13 2.14 2.15 2.16 −15 2.11 2.17 Frequency [GHz] Data Sheet 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] 33 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band Mid Gain Mode vs. Temperature 2.27 Measured Performance High Band Mid Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 2.8 V, VGS2 = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) 5 7 4.5 6.5 3.5 6 3 ICC [mA] Power Gain [dB] 4 2.5 2 5.5 5 1.5 1 4.5 0.5 0 −40 −20 0 20 40 60 80 4 −40 100 −20 0 TA [°C] 20 40 60 80 100 60 80 100 TA [°C] Noise Figure NF = f(TA) Input Compression P1dB = f(TA) 3.5 −5 3.3 −7 3.1 −9 P1dB [dBm] NF [dB] 2.9 2.7 2.5 2.3 −11 −13 2.1 1.9 −15 1.7 1.5 −40 −20 0 20 40 60 80 −17 −40 100 T [°C] Data Sheet −20 0 20 40 T [°C] A A 34 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band Low Gain Mode vs. Frequency 2.28 Measured Performance High Band Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f( f ) Power Gain Wideband |S21| = f( f ) −6 0 −6.5 −10 −20 Power Gain [dB] Power Gain [dB] −7 −7.5 −30°C 25°C −8 85°C −8.5 −40 −50 −9 −60 −9.5 −10 2.11 −30 2.12 2.13 2.14 2.15 2.16 −70 2.17 0 2 Frequency [GHz] 4 6 8 10 8 10 Frequency [GHz] Matching |S11| = f( f ), |S22| = f( f ) Reverse Isolation |S12| = f( f ) 0 0 −5 −10 S 11 −20 S 22 |S12| [dB] |S11|, |S22| [dB] −10 −15 −30 −20 −40 −25 −50 −30 −35 2.11 2.12 2.13 2.14 2.15 2.16 −60 2.17 Frequency [GHz] Data Sheet 0 2 4 6 Frequency [GHz] 35 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band Low Gain Mode vs. Temperature Input Compression P1dB = f( f ) 10 −5 9.5 −6 9 −7 8.5 −8 P1dB [dBm] NF [dB] Noise Figure NF = f( f ) 8 7.5 −9 −10 7 −11 6.5 −12 6 2.11 2.12 2.13 2.14 2.15 2.16 −13 2.11 2.17 2.12 2.13 Frequency [GHz] 2.29 2.14 2.15 2.16 2.17 Frequency [GHz] Measured Performance High Band Low Gain Mode vs. Temperature VCC = 2.8 V, VGS1 = 0 V, VGS2 = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V, RREF = 8.2 kΩ Power Gain |S21| = f(TA) Supply Current ICC = f(TA) −6 1 −6.5 0.95 0.9 −7.5 ICC [mA] Power Gain [dB] −7 −8 0.85 −8.5 0.8 −9 0.75 −9.5 −10 −40 −20 0 20 40 60 80 0.7 −40 100 T [°C] 0 20 40 60 80 100 T [°C] A Data Sheet −20 A 36 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Electrical Characteristics Measured Performance High Band Low Gain Mode vs. Temperature Input Compression P1dB = f(TA) 10 −2 9.5 −4 9 −6 8.5 −8 P1dB [dBm] NF [dB] Noise Figure NF = f(TA) 8 7.5 −10 −12 7 −14 6.5 −16 6 −40 −20 0 20 40 60 80 −18 −40 100 TA [°C] Data Sheet −20 0 20 40 60 80 100 TA [°C] 37 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Application Circuit and Block Diagram UMTS bands I, II and V Application Circuit Schematic 3 Application Circuit and Block Diagram 3.1 UMTS bands I, II and V Application Circuit Schematic C7 100nF VCC = 2.8 V VGS = 0 / 2.8 V VGS = 0 / 2.8 V 0 GND 5 n/c RFIN 1900 MHz RFIN 2100 MHz C1 39 pF 4 RFGNDH 3 VCC 2 VGS 1 VGS 2 1 C2 8.2pF 6 L1 L1 RFINM 4.7 nH 3.9 C3 18 pF 16 RFOUTM C4 22 pF L2 3.9 nH 7 RFINH 15 RFOUTH 8 RFGNDM 9 n/c RFIN 800 MHz C5 3.0pF 14 RFOUTL Biasing & Logic Circuitry 10 RFINL 11 VEN 2 12 VEN1 RREF 13 C6 39pF L3 8.2nH VEN = 0 / 2.8 V RFOUT 1900 MHz RFOUT 2100 MHz RFOUT 800 MHz RREF 8 .2 kΩ VEN = 0 / 2.8 V BGA736 L16 _Appl_ T_071210 .vsd Figure 2 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 13 Parts List Part Number Part Type Manufacturer Size Comment L1...L3 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1...C7 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 38 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Application Circuit and Block Diagram UMTS bands I, IV and VIII Application Circuit Schematic 3.2 UMTS bands I, IV and VIII Application Circuit Schematic C7 100nF 0 GND 5 n/c RFIN 2100 MHz RFIN 2100 MHz C1 18pF C3 18 pF VCC = 2.8 V 4 RFGNDH VGS = 0 / 2.8 V VGS = 0 / 2.8 V 3 VCC 2 VGS1 VGS 2 1 L4 2.9nH C2 6.8 pF 6 L1 L1 RFINM 3.4nH 3. nH C4 22 pF 7 L2 RFINH 3.9 nH RFOUT 2100 MHz 16 RFOUTM RFOUT 2100 MHz 15 RFOUTH L5 3.9nH 8 RFGNDM 9 n/c RFIN 900 MHz C5 3 .0pF RFOUT 900 MHz 14 Biasing & Logic Circuitry 10 RFINL 11 VEN2 RFOUTL 12 VEN1 RREF 13 R REF 8.2 kΩ C6 39 pF VEN = 0 / 2.8 V L3 7 .3nH VEN = 0 / 2.8 V BGA736 L16_ Appl_Bands _IV_VIII.vsd Figure 3 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 14 Parts List Part Number Part Type Manufacturer Size Comment L1...L5 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1...C7 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 39 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Application Circuit and Block Diagram Pin Definition 3.3 Pin Definition Table 15 Pin Definition and Function Pin Number Symbol Function 0 GND Ground connection for low band (800/900 MHz) LNA and control circuity (package paddle) 1 VGS2 Gain step control 2 VGS1 Gain step control 3 VCC Supply voltage 4 RFGNDH High band (2100 MHz) LNA RF ground 5 n/c Not connected 6 RFINM Mid band (1900/2100 MHz) LNA input 7 RFINH High band (2100 MHz) LNA input 8 RFGNDM Mid band (1900/2100 MHz) LNA RF ground 9 n/c Not connected 10 RFINL Low band (800/900 MHz) LNA input 11 VEN2 Band select control 12 VEN1 Band select control 13 RREF Bias current reference resistor (high / mid gain mode) 14 RFOUTL Low band (800/900 MHz) LNA output 15 RFOUTH High band (2100 MHz) LNA output 16 RFOUTM Mid band (1900/2100 MHz) LNA output Data Sheet 40 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Application Circuit and Block Diagram Application Board 3.4 Application Board 7RS/D\HUWRSYLHZ 0LGGOH/D\HUWRSYLHZ %RWWRP/D\HUWRSYLHZ %*$/B$SSB%RDUGYVG Figure 4 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 35 µm Cu metallization, gold plated. Board size: 20 x 50 mm PP&RSSHU PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU PP)5 PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU %*$/B&URVVB6HFWLRQB9LHZYVG Figure 5 Data Sheet Cross-section view of application board 41 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Application Circuit and Block Diagram 5),1+ *1' 5)2870 5)287+ 5)287/ (1 (1 5),1/ 5)*1'0 *6 *6 9&& 55() 5),10 5)*1'+ Application Board %*$/B$SSB%RDUGBH[DFWYVG Figure 6 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 42 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Physical Characteristics Package Footprint 4 Physical Characteristics 4.1 Package Footprint NSMD 0.55 1.25 0.3 0.2 0.3 0.2 0.3 0.2 0.3 Stencil apertures Solder mask SMD - V1 SMD - V2 (e.g. BGA734L16) 0.55 0.35 0.225 0.55 0.2 0.3 0.3 0.3 Copper 0.15 2.3 0.15 2.3 1.25 0.35 0.225 0.2 0.3 0.3 0.2 0.3 Copper 0.2 0.3 0.2 1.25 0.3 2.3 2.3 0.2 0.3 0.075 0.275 0.225 1.25 0.225 0.2 0.3 0.2 0.3 0.2 Solder mask 0.2 0.3 0.3 0.3 0.2 0.3 0.2 0.3 0.2 Vias top to first inner layer TSLP-16-1-FP V01 Figure 7 Data Sheet Recommended footprint and stencil layout for the TSLP-16-1 package. SMD - V2 footprint is used on IFX application board 43 V2.1, 2008-07-03 BGA736L16 - Tri-Band HSDPA LNA Physical Characteristics Package Dimensions 4.2 Package Dimensions Top view Bottom view 2.3 ±0.05 0.39 +0.01 -0.03 2 ±0.05 0.05 MAX. 1±0.05 9 10 11 12 15 6 16 4 3 2 1 1 6 x 0.2 ±0.035 1) Dimension applies to plated terminals Data Sheet 14 1.4 ±0.035 1) 7 5 Pin 1 marking Figure 8 8 0 . 0 5 x 45˚ 1 6 x 0.2 ±0.035 2.3 ±0.05 2 ±0.05 1.4 ±0.035 1±0.05 13 TSLP-16-1-PO V02 Package outline (top, side and bottom view) 44 V2.1, 2008-07-03 www.infineon.com Published by Infineon Technologies AG