Data Sheet, V3.2, May 2009 BGA711L7 S i ng l e - B an d U M T S L N A (2100, 1900 MHz) RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA711L7 - Low Power Single-Band UMTS LNA BGA711L7 Revision History: 2009-05-27, V3.2 Previous Version: 2008-11-05, V3.1 Page Subjects (major changes since last revision) 7 Updated DC Characteristics (added limits) 9, 10, 11 Updated footnotes 18 Updated value of C4 at Application Circuit Schematic for band II Data Sheet 3 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Gain Mode Select Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Supply current and Power gain characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor) . . . . . . . . . . . . . . . . . . 9 Measured RF Characteristics UMTS Bands I / IV / X (without reference resistor) . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Band II (with reference resistor) . . . . . . . . . . . . . . . . . . . . . . . . 11 Measured Performance High Band (Band I) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 12 Measured Performance High Band (Band I) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 13 Measured Performance High Band (Band I) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 14 Measured Performance High Band (Band I) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 16 3 3.1 3.2 3.3 3.4 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands I, IV and X Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS band II Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4.1 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Data Sheet 4 17 17 17 18 19 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Description 1 Description The BGA711L7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. Because the matching is off chip, the 2100 MHz path can be easily converted into a 1900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip. Features • Gain: 17 / -8 dB in high / low gain mode • Noise figure: 1.1 dB in high gain mode • Supply current: 3.6 / 0.5 mA in high / low gain mode • Standby mode (< 2 µA typ.) • Output internally matched to 50 Ω • Inputs pre-matched to 50 Ω • 2 kV HBM ESD protection • Low external component count • Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm) • Pb-free (RoHS compliant) package 5),1 9(1 TSLP-7-1 package 5)287 %LDVLQJ/RJLF &LUFXLWU\ 55() 9*6 9&& *1' %*$/B&KLSB%O'YVG Figure 1 Block diagram of single-band LNA Type Package Marking Chip BGA711L7 TSLP-7-1 B1 T1531 Data Sheet 5 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Absolute Maximum Ratings 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol VCC Supply current ICC Pin voltage VPIN Pin voltage RF Input Pin VRFIN RF input power PRFIN Junction temperature Tj Ambient temperature range TA Storage temperature range Tstg Supply voltage 2.2 Thermal Resistance Table 2 Thermal Resistance Parameter Symbol Max. -0.3 3.6 V 10 mA -0.3 VCC+0.3 V -0.3 0.9 V 4 dBm 150 °C -30 85 °C -65 150 °C All pins except RF input pin 240 K/W Symbol Value (typ.) Unit Note / Test Conditions VESD-HBM 2000 V All pins ESD Integrity Table 3 ESD Integrity ESD hardness HBM Min. Note / Test Condition Unit 2.3 1) Unit Value Thermal resistance junction RthJS to soldering point Parameter Values Note / Test Conditions 1) According to JESD22-A114 Data Sheet 6 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics DC Characteristics 2.4 DC Characteristics Table 4 DC Characteristics, TA = 25 °C Parameter Symbol Supply voltage VCC ICCHG Supply current high gain mode Values Min. Typ. Max. 2.6 2.8 3.0 mA µA ICCLG 500 Supply current standby mode ICCOFF 0.1 Logic level high VHI VLO IENL IENH IGSL IGSH Logic currents VEN Logic currents VGS 1.5 2.8 -0.2 0.0 V 5.0 2.5 Gain Mode Select Truth Table Table 5 Truth Table Control Voltage µA 2.0 5.0 Note / Test Condition V 3.6 Supply current low gain mode Logic level low Unit 0.5 V 0.1 µA 6.0 µA 0.1 µA 6.0 µA VEN and VGS VEN VGS State Bands I, II, IV and X VEN VGS HG LG H L OFF ON H H ON L L L H STANDBY OFF 1) 1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode although this is not mandatory. Details see section 2.4. 2.6 Switching Times Table 6 Typical switching times; TA = -30 ... 85 °C Parameter Symbol Values Min. Settling time gainstep Data Sheet tGS Typ. 1 7 Unit Note / Test Condition µs Switching LG ↔ HG Max. V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Supply current and Power gain characteristics; TA = 25 °C Supply current and Power gain characteristics; TA = 25 °C 2.7 Supply current and Power gain high gain mode versus reference resistor RREF (see Figure 2 on page 17 for reference resistor; low gain mode supply current is independent of reference resistor). Supply Current ICC = f (RREF) VCC = 2.8 V Power Gain |S21| = f (RREF) VCC = 2.8 V 7 19 6.5 18.5 6 Power Gain [dB] Icc [mA] 5.5 5 4.5 4 18 17.5 17 3.5 3 16.5 2.5 2 1 10 16 100 10 100 RREF [kΩ] 1000 RREF [kΩ] Logic Signal Characteristics; TA = 25 °C 2.8 Current consumption of logic inputs VEN, VGS Logic currents IEN = f (VEN) VCC = 2.8 V Logic currents IGS = f (VGS) VCC = 2.8 V 6 4 4 IGS [µA] IEN [µA] 6 2 0 2 0 0.5 1 1.5 2 2.5 0 3 VEN [V] Data Sheet 0 0.5 1 1.5 V GS 8 2 2.5 3 [V] V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor) 2.9 Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor) Table 7 Typical Characteristics 2100 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = 27 kΩ Parameter Symbol Values Min. Typ. Unit Max. Pass band range band I / X 2110 2170 MHz Pass band range band IV 2110 2155 MHz Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) 1) Output return loss 2) Stability factor Input compression point1) 1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Note / Test Condition ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.6 mA High gain mode 0.5 mA Low gain mode 17.0 dB High gain mode -7.6 dB Low gain mode -36 dB High gain mode -8 dB Low gain mode 1.1 dB High gain mode 7.8 dB Low gain mode -20 dB 50 Ω, high gain mode -15 dB 50 Ω, low gain mode -19 dB 50 Ω, high gain mode -17 dB 50 Ω, low gain mode IP1dBHG IP1dBLG IIP3HG IIP3LG -8 dBm High gain mode -2 dBm Low gain mode -2 7 dBm High gain mode Low gain mode >2.3 DC to 10 GHz; all gain modes 1) Verification based on AQL; not 100% tested in production 2) Guaranteed by device design; not tested in production Data Sheet 9 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Bands I / IV / X (without ref. resistor) 2.10 Measured RF Characteristics UMTS Bands I / IV / X (without ref. resistor) Table 8 Typical Characteristics 2100 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = n/c Parameter Symbol Values Min. Typ. Unit Max. Pass band range band I / X 2110 2170 MHz Pass band range band IV 2110 2155 MHz Current consumption Gain Reverse Isolation 1) Noise figure Input return loss 1) 1) Output return loss 2) Stability factor Input compression point1) 1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Note / Test Condition ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.3 mA High gain mode 0.5 mA Low gain mode 16.7 dB High gain mode -7.7 dB Low gain mode -36 dB High gain mode -8 dB Low gain mode 1.1 dB High gain mode 8.1 dB Low gain mode -21 dB 50 Ω, high gain mode -14 dB 50 Ω, low gain mode -19 dB 50 Ω, high gain mode -18 dB 50 Ω, low gain mode IP1dBHG IP1dBLG IIP3HG IIP3LG -8 dBm High gain mode -2 dBm Low gain mode -2 7 dBm High gain mode Low gain mode >2.3 DC to 10 GHz; all gain modes 1) Verification based on AQL; not 100% tested in production 2) Guaranteed by device design; not tested in production Data Sheet 10 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Band II (with reference resistor) 2.11 Measured RF Characteristics UMTS Band II (with reference resistor) Table 9 Typical Characteristics 1900 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = 27 kΩ Parameter Symbol Values Min. Pass band range band II Current consumption Gain Reverse Isolation 1) Noise figure Input return loss1) 1) Output return loss 2) Stability factor Input compression point1) 1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm Typ. 1930 Unit Note / Test Condition Max. 1990 MHz ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k 3.6 mA High gain mode 0.5 mA Low gain mode 17.2 dB High gain mode -9.2 dB Low gain mode -38.6 dB High gain mode -9.2 dB Low gain mode IP1dBHG IP1dBLG IIP3HG IIP3LG -7 dBm High gain mode -3 dBm Low gain mode -3 2 dBm High gain mode Low gain mode 1.1 dB High gain mode 9.4 dB Low gain mode -14 dB 50 Ω, high gain mode -15 dB 50 Ω, low gain mode -15 dB 50 Ω, high gain mode -18 dB 50 Ω, low gain mode >2.2 DC to 10 GHz; all gain modes 1) Verification based on AQL; not 100% tested in production 2) Guaranteed by device design; not tested in production Data Sheet 11 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) High Gain Mode vs. Frequency 2.12 Measured Performance High Band (Band I) High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, RREF = 27 kΩ Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 20 20 10 19 Power Gain [dB] Power Gain [dB] 0 18 −30°C 25°C 17 −10 −20 −30 85°C −40 16 −50 15 2.11 2.12 2.13 2.14 2.15 2.16 −60 2.17 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Gainstep HG-LG |∆S21| = f ( f ) Matching |S11| = f ( f ), |S22| = f ( f ) 0 26 −5 Delta Gain [dB] |S11|, |S22| [dB] 25.5 −10 −15 S 22 −20 25 25°C S11 24.5 85°C −25 −30 2.11 −30°C 2.12 2.13 2.14 2.15 2.16 24 2.11 2.17 Frequency [GHz] Data Sheet 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] 12 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 0 1.5 −2 1.4 −4 P1dB [dBm] NF [dB] 1.3 1.2 1.1 −6 −8 −10 1 −12 0.9 0.8 2.11 2.12 2.13 2.14 2.15 2.16 −14 2.11 2.17 2.12 Frequency [GHz] 2.13 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Measured Performance High Band (Band I) High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 2140 MHz, RREF = 27 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 20 5 4.5 4 18 ICC [mA] Power Gain [dB] 19 17 3.5 3 16 15 −40 2.5 −20 0 20 40 60 80 2 −40 100 T [°C] Data Sheet −20 0 20 40 60 80 100 TA [°C] A 13 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 0 −2 1.6 −4 P1dB [dBm] NF [dB] 1.4 1.2 −6 −8 1 −10 0.8 −12 0.6 −40 −20 0 20 40 60 80 −14 −40 100 −20 0 TA [°C] 2.14 20 40 60 80 100 TA [°C] Measured Performance High Band (Band I) Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, RREF = 27 kΩ Power Gain wideband |S21| = f ( f ) −5 0 −6 −10 −30°C −7 Power Gain [dB] Power Gain [dB] Power Gain |S21| = f ( f ) 25°C 85°C −8 −9 −10 −11 2.11 −30 −40 −50 2.12 2.13 2.14 2.15 2.16 −60 2.17 Frequency [GHz] Data Sheet −20 0 2 4 6 8 Frequency [GHz] 14 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) 0 |S11|, |S22| [dB] −5 −10 S 11 −15 S 22 −20 −25 −30 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 4 10 2 0 P1dB [dBm] NF [dB] 9 8 −2 −4 7 −6 6 5 2.11 −8 2.12 2.13 2.14 2.15 2.16 −10 2.11 2.17 Frequency [GHz] Data Sheet 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] 15 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) Low Gain Mode vs. Temperature 2.15 Measured Performance High Band (Band I) Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 2140 MHz, RREF = 27 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 0.7 0.65 −6 −7 0.55 ICC [mA] Power Gain [dB] 0.6 −8 0.5 0.45 −9 0.4 −10 −11 −40 0.35 −20 0 20 40 60 80 0.3 −40 100 −20 0 20 TA [°C] 40 60 80 100 TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 4 11 2 10 0 P1dB [dBm] NF [dB] 9 8 7 −8 −20 0 20 40 60 80 −10 −40 100 −20 0 20 40 60 80 100 T [°C] TA [°C] Data Sheet −4 −6 6 5 −40 −2 A 16 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram UMTS bands I, IV and X Application Circuit Schematic 3 Application Circuit and Block Diagram 3.1 UMTS bands I, IV and X Application Circuit Schematic RFIN 2100 MHz C1 10pF C2 100 pF L1 2nH VEN = 0 / 2.8 V 1 RFIN 2 VEN VGS = 0 / 2.8 V 6 RFOUT Biasing & Logic Circuitry RFOUT 2100 MHz 5 RREF 4 3 VGS VCC RREF 27 kΩ VCC = 2.8 V C3 10nF 7 GND BGA 711L7 _Appl _BlD_RREF.vsd Figure 2 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 10 Parts List Part Number Part Type Manufacturer Size Comment L1 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C3 Chip capacitor Various 0402 RREF Chip resistor Various 0402 Data Sheet 17 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram UMTS band II Application Circuit Schematic 3.2 UMTS band II Application Circuit Schematic RFIN 1900 MHz C1 10pF L2 2.7nH C2 100pF L1 2.7nH VEN = 0 / 2.8 V 2 VEN VGS = 0 / 2.8 V 6 RFOUT 1 RFIN Biasing & Logic Circuitry 5 RREF 4 3 VGS VCC C4 1.2pF RFOUT 1900 MHz RREF 27kΩ VCC = 2.8 V C3 10nF 7 GND BGA711L7_Appl _BlD_RREF_BandII.vsd Figure 3 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 11 Parts List Part Number Part Type Manufacturer Size Comment L1, L2 Chip inductor Various 0402 Wirewound, Q ≈ 50 C1 ... C4 Chip capacitor Various 0402 RREF Chip resistor Various 0402 3.3 Pin Definition Table 12 Pin Definition and Function Pin Number Symbol Function 1 RFIN LNA input (2100/1900 MHz) 2 VEN Band select control 3 VGS Gain step control 4 VCC Supply voltage 5 RREF Bias current reference resistor (high gain mode) 6 RFOUT LNA output (2100/1900 MHz) 7 GND Package paddle; ground connection for LNA and control circuitry Data Sheet 18 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram Application Board 3.4 Application Board 7RSOD\HUWRSYLHZ 0LGGOHOD\HUWRSYLHZ %RWWRPOD\HUWRSYLHZ %*$/B$SSB%RDUGYVG Figure 4 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board size: 21 x 19 mm PP&RSSHU PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU PP)5 PP3UHSUHJ)5 PP3UHSUHJ)5 PP&RSSHU %*$/B&URVVB6HFWLRQB9LHZYVG Figure 5 Data Sheet Cross-section view of application board 19 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram Application Board 5),1 55() *1' 9*6 5)287 9&& 9(1 %*$/B$SSB%RDUGBH[DFWYVG Figure 6 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 20 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Physical Characteristics Package Dimensions 4 Physical Characteristics 4.1 Package Dimensions NSMD SMD Copper 1.9 0.2 Copper 0.25 0.2 0.25 0.25 0.3 Stencil apertures Solder mask 0.3 0.2 0.2 0.3 R0.1 0.25 0.3 0.2 0.25 1.9 1.9 0.25 0.2 0.3 0.25 0.2 0.2 0.25 0.2 0.2 0.2 1.9 0.3 1.4 0.2 1.4 0.2 1.4 0.2 1.4 R0.1 Stencil apertures Solder mask TSLP-7-1-FP V01 Recommended footprint and stencil layout for the TSLP-7-1 package Top view Bottom view 0.4 +0.1 1.3 ±0.05 0.05 MAX. 1 ±0.05 6 1.7 ±0.05 1.2 ±0.035 1) 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.035 1) 1) Dimension applies to plated terminal Figure 8 2 ±0.05 5 6 x 0.2 ±0.035 1) 4 1.1 ±0.035 1) Figure 7 TSLP-7-1-PO V04 Package outline (top, side and bottom view) 0.5 8 2.18 4 Pin 1 marking Figure 9 Data Sheet 1.45 TSLP-7-1-TP V03 Tape & Reel Dimensions 21 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Physical Characteristics Package Dimensions %*$/ 7\SHFRGH $ &: 'DWHFRGH<<:: 3LQPDUNLQJ /DVHUPDUNLQJ %*$/B0DUNLQJB/D\RXWYVG Figure 10 Data Sheet Marking Layout 22 V3.2, 2009-05-27 www.infineon.com Published by Infineon Technologies AG