INFINEON BGA711L7

Data Sheet, V3.2, May 2009
BGA711L7
S i ng l e - B an d U M T S L N A
(2100, 1900 MHz)
RF & Protection Devices
Edition 2009-05-27
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA711L7 - Low Power Single-Band UMTS LNA
BGA711L7
Revision History: 2009-05-27, V3.2
Previous Version: 2008-11-05, V3.1
Page
Subjects (major changes since last revision)
7
Updated DC Characteristics (added limits)
9, 10, 11
Updated footnotes
18
Updated value of C4 at Application Circuit Schematic for band II
Data Sheet
3
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.10
2.11
2.12
2.13
2.14
2.15
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Gain Mode Select Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Supply current and Power gain characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor) . . . . . . . . . . . . . . . . . . 9
Measured RF Characteristics UMTS Bands I / IV / X (without reference resistor) . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Band II (with reference resistor) . . . . . . . . . . . . . . . . . . . . . . . . 11
Measured Performance High Band (Band I) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 12
Measured Performance High Band (Band I) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 13
Measured Performance High Band (Band I) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 14
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 16
3
3.1
3.2
3.3
3.4
Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, IV and X Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS band II Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4.1
Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Data Sheet
4
17
17
17
18
19
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Description
1
Description
The BGA711L7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is
based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1
leadless green package. Because the matching is off chip, the 2100 MHz path can be easily converted into a
1900 MHz path by optimizing the input and output matching network. This document specifies the electrical
parameters, pinout, application circuit and packaging of the chip.
Features
• Gain: 17 / -8 dB in high / low gain mode
• Noise figure: 1.1 dB in high gain mode
• Supply current: 3.6 / 0.5 mA in high / low gain mode
• Standby mode (< 2 µA typ.)
• Output internally matched to 50 Ω
• Inputs pre-matched to 50 Ω
• 2 kV HBM ESD protection
• Low external component count
• Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm)
• Pb-free (RoHS compliant) package
5),1
9(1
TSLP-7-1 package
5)287
%LDVLQJ/RJLF
&LUFXLWU\
55()
9*6
9&&
*1'
%*$/B&KLSB%O'YVG
Figure 1
Block diagram of single-band LNA
Type
Package
Marking
Chip
BGA711L7
TSLP-7-1
B1
T1531
Data Sheet
5
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Absolute Maximum Ratings
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Table 1
Absolute Maximum Ratings
Parameter
Symbol
VCC
Supply current
ICC
Pin voltage
VPIN
Pin voltage RF Input Pin
VRFIN
RF input power
PRFIN
Junction temperature
Tj
Ambient temperature range TA
Storage temperature range Tstg
Supply voltage
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
Max.
-0.3
3.6
V
10
mA
-0.3
VCC+0.3
V
-0.3
0.9
V
4
dBm
150
°C
-30
85
°C
-65
150
°C
All pins except RF input pin
240
K/W
Symbol
Value (typ.)
Unit
Note / Test Conditions
VESD-HBM
2000
V
All pins
ESD Integrity
Table 3
ESD Integrity
ESD hardness HBM
Min.
Note / Test Condition
Unit
2.3
1)
Unit
Value
Thermal resistance junction RthJS
to soldering point
Parameter
Values
Note / Test Conditions
1) According to JESD22-A114
Data Sheet
6
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
DC Characteristics
2.4
DC Characteristics
Table 4
DC Characteristics, TA = 25 °C
Parameter
Symbol
Supply voltage
VCC
ICCHG
Supply current high gain
mode
Values
Min.
Typ.
Max.
2.6
2.8
3.0
mA
µA
ICCLG
500
Supply current standby
mode
ICCOFF
0.1
Logic level high
VHI
VLO
IENL
IENH
IGSL
IGSH
Logic currents VEN
Logic currents VGS
1.5
2.8
-0.2
0.0
V
5.0
2.5
Gain Mode Select Truth Table
Table 5
Truth Table
Control Voltage
µA
2.0
5.0
Note / Test Condition
V
3.6
Supply current low gain
mode
Logic level low
Unit
0.5
V
0.1
µA
6.0
µA
0.1
µA
6.0
µA
VEN and VGS
VEN
VGS
State
Bands I, II, IV and X
VEN
VGS
HG
LG
H
L
OFF
ON
H
H
ON
L
L
L
H
STANDBY
OFF
1)
1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode
although this is not mandatory. Details see section 2.4.
2.6
Switching Times
Table 6
Typical switching times; TA = -30 ... 85 °C
Parameter
Symbol
Values
Min.
Settling time gainstep
Data Sheet
tGS
Typ.
1
7
Unit
Note / Test Condition
µs
Switching LG ↔ HG
Max.
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Supply current and Power gain characteristics; TA = 25 °C
Supply current and Power gain characteristics; TA = 25 °C
2.7
Supply current and Power gain high gain mode versus reference resistor RREF (see Figure 2 on page 17 for
reference resistor; low gain mode supply current is independent of reference resistor).
Supply Current ICC = f (RREF)
VCC = 2.8 V
Power Gain |S21| = f (RREF)
VCC = 2.8 V
7
19
6.5
18.5
6
Power Gain [dB]
Icc [mA]
5.5
5
4.5
4
18
17.5
17
3.5
3
16.5
2.5
2
1
10
16
100
10
100
RREF [kΩ]
1000
RREF [kΩ]
Logic Signal Characteristics; TA = 25 °C
2.8
Current consumption of logic inputs VEN, VGS
Logic currents IEN = f (VEN)
VCC = 2.8 V
Logic currents IGS = f (VGS)
VCC = 2.8 V
6
4
4
IGS [µA]
IEN [µA]
6
2
0
2
0
0.5
1
1.5
2
2.5
0
3
VEN [V]
Data Sheet
0
0.5
1
1.5
V
GS
8
2
2.5
3
[V]
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor)
2.9
Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor)
Table 7
Typical Characteristics 2100 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = 27 kΩ
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Pass band range band I / X
2110
2170
MHz
Pass band range band IV
2110
2155
MHz
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -37 dBm
Note / Test Condition
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
S11LG
S22HG
S22LG
k
3.6
mA
High gain mode
0.5
mA
Low gain mode
17.0
dB
High gain mode
-7.6
dB
Low gain mode
-36
dB
High gain mode
-8
dB
Low gain mode
1.1
dB
High gain mode
7.8
dB
Low gain mode
-20
dB
50 Ω, high gain mode
-15
dB
50 Ω, low gain mode
-19
dB
50 Ω, high gain mode
-17
dB
50 Ω, low gain mode
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-8
dBm
High gain mode
-2
dBm
Low gain mode
-2
7
dBm
High gain mode
Low gain mode
>2.3
DC to 10 GHz; all gain
modes
1) Verification based on AQL; not 100% tested in production
2) Guaranteed by device design; not tested in production
Data Sheet
9
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics UMTS Bands I / IV / X (without ref. resistor)
2.10
Measured RF Characteristics UMTS Bands I / IV / X (without ref. resistor)
Table 8
Typical Characteristics 2100 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = n/c
Parameter
Symbol
Values
Min.
Typ.
Unit
Max.
Pass band range band I / X
2110
2170
MHz
Pass band range band IV
2110
2155
MHz
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss
1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -37 dBm
Note / Test Condition
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
S11LG
S22HG
S22LG
k
3.3
mA
High gain mode
0.5
mA
Low gain mode
16.7
dB
High gain mode
-7.7
dB
Low gain mode
-36
dB
High gain mode
-8
dB
Low gain mode
1.1
dB
High gain mode
8.1
dB
Low gain mode
-21
dB
50 Ω, high gain mode
-14
dB
50 Ω, low gain mode
-19
dB
50 Ω, high gain mode
-18
dB
50 Ω, low gain mode
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-8
dBm
High gain mode
-2
dBm
Low gain mode
-2
7
dBm
High gain mode
Low gain mode
>2.3
DC to 10 GHz; all gain
modes
1) Verification based on AQL; not 100% tested in production
2) Guaranteed by device design; not tested in production
Data Sheet
10
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured RF Characteristics UMTS Band II (with reference resistor)
2.11
Measured RF Characteristics UMTS Band II (with reference resistor)
Table 9
Typical Characteristics 1900 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = 27 kΩ
Parameter
Symbol
Values
Min.
Pass band range band II
Current consumption
Gain
Reverse Isolation
1)
Noise figure
Input return loss1)
1)
Output return loss
2)
Stability factor
Input compression point1)
1)
Inband IIP3
f1 - f2 = 1 MHz
Pf1 = Pf2 = -37 dBm
Typ.
1930
Unit
Note / Test Condition
Max.
1990
MHz
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
S11LG
S22HG
S22LG
k
3.6
mA
High gain mode
0.5
mA
Low gain mode
17.2
dB
High gain mode
-9.2
dB
Low gain mode
-38.6
dB
High gain mode
-9.2
dB
Low gain mode
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-7
dBm
High gain mode
-3
dBm
Low gain mode
-3
2
dBm
High gain mode
Low gain mode
1.1
dB
High gain mode
9.4
dB
Low gain mode
-14
dB
50 Ω, high gain mode
-15
dB
50 Ω, low gain mode
-15
dB
50 Ω, high gain mode
-18
dB
50 Ω, low gain mode
>2.2
DC to 10 GHz; all gain
modes
1) Verification based on AQL; not 100% tested in production
2) Guaranteed by device design; not tested in production
Data Sheet
11
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band (Band I) High Gain Mode vs. Frequency
2.12
Measured Performance High Band (Band I) High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, RREF = 27 kΩ
Power Gain |S21| = f ( f )
Power Gain wideband |S21| = f ( f )
20
20
10
19
Power Gain [dB]
Power Gain [dB]
0
18
−30°C
25°C
17
−10
−20
−30
85°C
−40
16
−50
15
2.11
2.12
2.13
2.14
2.15
2.16
−60
2.17
0
2
4
6
8
Frequency [GHz]
Frequency [GHz]
Gainstep HG-LG |∆S21| = f ( f )
Matching |S11| = f ( f ), |S22| = f ( f )
0
26
−5
Delta Gain [dB]
|S11|, |S22| [dB]
25.5
−10
−15
S
22
−20
25
25°C
S11
24.5
85°C
−25
−30
2.11
−30°C
2.12
2.13
2.14
2.15
2.16
24
2.11
2.17
Frequency [GHz]
Data Sheet
2.12
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
12
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band (Band I) High Gain Mode vs. Temperature
Noise Figure NF = f ( f )
Input Compression P1dB = f ( f )
1.6
0
1.5
−2
1.4
−4
P1dB [dBm]
NF [dB]
1.3
1.2
1.1
−6
−8
−10
1
−12
0.9
0.8
2.11
2.12
2.13
2.14
2.15
2.16
−14
2.11
2.17
2.12
Frequency [GHz]
2.13
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
Measured Performance High Band (Band I) High Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 2140 MHz, RREF = 27 kΩ
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
20
5
4.5
4
18
ICC [mA]
Power Gain [dB]
19
17
3.5
3
16
15
−40
2.5
−20
0
20
40
60
80
2
−40
100
T [°C]
Data Sheet
−20
0
20
40
60
80
100
TA [°C]
A
13
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band (Band I) Low Gain Mode vs. Frequency
Noise Figure NF = f (TA)
Input Compression P1dB = f (TA)
1.8
0
−2
1.6
−4
P1dB [dBm]
NF [dB]
1.4
1.2
−6
−8
1
−10
0.8
−12
0.6
−40
−20
0
20
40
60
80
−14
−40
100
−20
0
TA [°C]
2.14
20
40
60
80
100
TA [°C]
Measured Performance High Band (Band I) Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, RREF = 27 kΩ
Power Gain wideband |S21| = f ( f )
−5
0
−6
−10
−30°C
−7
Power Gain [dB]
Power Gain [dB]
Power Gain |S21| = f ( f )
25°C
85°C
−8
−9
−10
−11
2.11
−30
−40
−50
2.12
2.13
2.14
2.15
2.16
−60
2.17
Frequency [GHz]
Data Sheet
−20
0
2
4
6
8
Frequency [GHz]
14
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band (Band I) Low Gain Mode vs. Frequency
Matching |S11| = f ( f ), |S22| = f ( f )
0
|S11|, |S22| [dB]
−5
−10
S
11
−15
S
22
−20
−25
−30
2.11
2.12
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
Noise Figure NF = f ( f )
Input Compression P1dB = f ( f )
11
4
10
2
0
P1dB [dBm]
NF [dB]
9
8
−2
−4
7
−6
6
5
2.11
−8
2.12
2.13
2.14
2.15
2.16
−10
2.11
2.17
Frequency [GHz]
Data Sheet
2.12
2.13
2.14
2.15
2.16
2.17
Frequency [GHz]
15
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Electrical Characteristics
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature
2.15
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature
VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 2140 MHz, RREF = 27 kΩ
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
−5
0.7
0.65
−6
−7
0.55
ICC [mA]
Power Gain [dB]
0.6
−8
0.5
0.45
−9
0.4
−10
−11
−40
0.35
−20
0
20
40
60
80
0.3
−40
100
−20
0
20
TA [°C]
40
60
80
100
TA [°C]
Noise Figure NF = f (TA)
Input Compression P1dB = f (TA)
4
11
2
10
0
P1dB [dBm]
NF [dB]
9
8
7
−8
−20
0
20
40
60
80
−10
−40
100
−20
0
20
40
60
80
100
T [°C]
TA [°C]
Data Sheet
−4
−6
6
5
−40
−2
A
16
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
UMTS bands I, IV and X Application Circuit Schematic
3
Application Circuit and Block Diagram
3.1
UMTS bands I, IV and X Application Circuit Schematic
RFIN
2100 MHz
C1
10pF
C2
100 pF
L1
2nH
VEN = 0 / 2.8 V
1
RFIN
2
VEN
VGS = 0 / 2.8 V
6
RFOUT
Biasing & Logic
Circuitry
RFOUT
2100 MHz
5
RREF
4
3
VGS
VCC
RREF
27 kΩ
VCC = 2.8 V
C3
10nF
7 GND
BGA 711L7 _Appl _BlD_RREF.vsd
Figure 2
Application circuit with chip outline (top view)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 10
Parts List
Part Number
Part Type
Manufacturer
Size
Comment
L1
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1 ... C3
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
Data Sheet
17
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
UMTS band II Application Circuit Schematic
3.2
UMTS band II Application Circuit Schematic
RFIN
1900 MHz
C1
10pF
L2
2.7nH
C2
100pF
L1
2.7nH
VEN = 0 / 2.8 V
2
VEN
VGS = 0 / 2.8 V
6
RFOUT
1
RFIN
Biasing & Logic
Circuitry
5
RREF
4
3
VGS
VCC
C4
1.2pF
RFOUT
1900 MHz
RREF
27kΩ
VCC = 2.8 V
C3
10nF
7 GND
BGA711L7_Appl _BlD_RREF_BandII.vsd
Figure 3
Application circuit with chip outline (top view)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 11
Parts List
Part Number
Part Type
Manufacturer
Size
Comment
L1, L2
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1 ... C4
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
3.3
Pin Definition
Table 12
Pin Definition and Function
Pin Number
Symbol
Function
1
RFIN
LNA input (2100/1900 MHz)
2
VEN
Band select control
3
VGS
Gain step control
4
VCC
Supply voltage
5
RREF
Bias current reference resistor (high gain mode)
6
RFOUT
LNA output (2100/1900 MHz)
7
GND
Package paddle; ground connection for LNA and control circuitry
Data Sheet
18
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
Application Board
3.4
Application Board
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Figure 4
Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness:
0.8 mm, 17 µm Cu metallization, gold plated. Board size: 21 x 19 mm
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Figure 5
Data Sheet
Cross-section view of application board
19
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Application Circuit and Block Diagram
Application Board
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Figure 6
Detail of application board layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout
as closely as possible. The position of the GND vias is critical for RF performance.
Data Sheet
20
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Physical Characteristics
Package Dimensions
4
Physical Characteristics
4.1
Package Dimensions
NSMD
SMD
Copper
1.9
0.2
Copper
0.25
0.2
0.25
0.25
0.3
Stencil apertures
Solder mask
0.3
0.2
0.2
0.3
R0.1
0.25
0.3
0.2
0.25
1.9
1.9
0.25
0.2
0.3
0.25
0.2
0.2
0.25
0.2
0.2
0.2
1.9
0.3
1.4
0.2
1.4
0.2
1.4
0.2
1.4
R0.1
Stencil apertures
Solder mask
TSLP-7-1-FP V01
Recommended footprint and stencil layout for the TSLP-7-1 package
Top view
Bottom view
0.4
+0.1
1.3 ±0.05
0.05 MAX.
1 ±0.05
6
1.7 ±0.05
1.2 ±0.035 1)
7
3
Pin 1 marking
2
1
6 x 0.2 ±0.035 1)
1) Dimension applies to plated terminal
Figure 8
2 ±0.05
5
6 x 0.2 ±0.035 1)
4
1.1 ±0.035 1)
Figure 7
TSLP-7-1-PO V04
Package outline (top, side and bottom view)
0.5
8
2.18
4
Pin 1
marking
Figure 9
Data Sheet
1.45
TSLP-7-1-TP V03
Tape & Reel Dimensions
21
V3.2, 2009-05-27
BGA711L7 - Low Power Single-Band UMTS LNA
Physical Characteristics
Package Dimensions
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Figure 10
Data Sheet
Marking Layout
22
V3.2, 2009-05-27
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