TEMD7100X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23 • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm emitters • Fast response times • Angle of half sensitivity: ϕ = ± 60° 20043-1 • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION • AEC-Q101 qualified TEMD7100X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 0.23 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength of 830 nm to 950 nm. • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • • • • • High speed photo detector Infrared remote control Infrared data transmission Photo interrupters Shaft encoders PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.5 (nm) TEMD7100X01 3 ± 60 750 to 1050 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD7100X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Tamb ≤ 25 °C Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Document Number: 81960 Rev. 1.2, 28-Sep-10 SYMBOL VALUE VR 60 UNIT V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 Acc. reflow solder profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 270 K/W For technical questions, contact: [email protected] www.vishay.com 1 TEMD7100X01 Silicon PIN Photodiode Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro VR = 0 V, f = 1 MHz, E = 0 CD 4 pF VR = 5 V, f = 1 MHz, E = 0 CD 1.3 pF Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV mV/K Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage mW/cm2, λ = 950 nm MIN. TYP. MAX. UNIT 1 V 60 V 1 3 nA Temperature coefficient of Vo Ee = 1 TKVo - 2.6 Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 3 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 2.4 3 3.6 μA Angle of half sensitivity ϕ ± 60 deg Wavelength of peak sensitivity λp 950 nm λ0.5 750 to 1050 nm Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns Range of spectral bandwidth BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Ira, rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8427 40 60 80 Tamb - Ambient Temperature (°C) VR = 5 V λ = 950 nm 1.2 1.0 0.8 0.6 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature www.vishay.com 2 1.4 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature For technical questions, contact: [email protected] Document Number: 81960 Rev. 1.2, 28-Sep-10 TEMD7100X01 Silicon PIN Photodiode 1.2 S (λ)rel - Relative Spectral Sensitivity 1 0.1 VR = 5 V λ = 950 nm 0.01 0.001 0.01 0.1 1 0.8 0.6 0.4 0.2 0 600 10 Ee - Irradiance (mW/cm2 ) 21535 1.0 700 Fig. 3 - Reverse Light Current vs. Irradiance 800 0° 1100 10° 20° 30° Ie, rel - Relative Radiant Intensity Ira - Reverse Light Current (µA) 1000 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 λ = 950 nm 10 1 mW/cm2 1 0.1 17026 900 λ - Wavelength (nm) 21554 1 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 100 ϕ - Angular Displacement Ira - Reverse Light Current (µA) 10 Vishay Semiconductors 80° 0.6 0.4 0.2 0 94 8013 VR - Reverse Voltage Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Intensity vs. Angular Displacement CD - Diode Capacitance (pF) 8 6 E=0 f = 1 MHz 4 2 0 1 0.1 94 8430 10 100 VR- Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Document Number: 81960 Rev. 1.2, 28-Sep-10 For technical questions, contact: [email protected] www.vishay.com 3 TEMD7100X01 Silicon PIN Photodiode Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 3, acc. to J-STD-020. 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 50 100 19841 150 200 250 FLOOR LIFE 300 Time (s) DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS in millimeters 20018 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81960 Rev. 1.2, 28-Sep-10 TEMD7100X01 Silicon PIN Photodiode Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters 21501 Document Number: 81960 Rev. 1.2, 28-Sep-10 For technical questions, contact: [email protected] www.vishay.com 5 TEMD7100X01 Silicon PIN Photodiode Vishay Semiconductors REEL DIMENSIONS in millimeters 8.4 +2.5 Ø 177.8 max. Ø 55 min. 8.4 +0.15 Z Form of the leave open of the wheel is supplier specific. 14.4 max. Ø 20.2 min. 1.5 min. Ø 13 - 0.2 + 0.5 Z 2:1 Drawing-No.: 9.800-5096.01-4 technical drawings according to DIN specifications Issue: 2; 26.04.10 20875 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 81960 Rev. 1.2, 28-Sep-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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