BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • • Drain SOT-323 D Gate G TOP VIEW S Source TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current (Note 1) Thermal Characteristics Symbol VDSS VDGR VGSS ID Continuous Continuous Value -50 -50 ±20 -130 Units V V V mA Value 200 625 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Symbol Pd RθJA Tj, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS -50 -75 ⎯ ⎯ ⎯ ⎯ ⎯ -15 -60 -100 V µA µA nA ±10 nA VGS = 0V, ID = -250μA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time IGSS ⎯ ⎯ ⎯ ⎯ VGS(th) RDS (ON) gFS -0.8 ⎯ .05 -1.6 6 ⎯ -2.0 10 ⎯ V Ω S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 10 18 ⎯ ⎯ ns ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Notes: 1. 2. 3. 4. 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Short duration pulse test used to minimize self-heating effect. BSS84W Document number: DS30205 Rev. 11 - 2 1 of 3 www.diodes.com October 2007 © Diodes Incorporated BSS84W -600 250 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) -500 200 -400 150 -300 100 -200 50 0 0 -100 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature -1 -2 -3 -5 -4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs.Drain-Source Voltage -1.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (Ω) 10 ID , DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 -0.0 0 9 8 7 6 5 4 3 2 TA = 125°C 1 0 -1 -2 -3 -5 -4 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage 15 TA = 25°C 0 -2 -4 -5 -3 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage -1 25.0 VGS = -10V ID = -0.13A 12 RDS(ON), ON-RESISTANCE (Ω) RDS(ON), ON-RESISTANCE (Ω) NEW PRODUCT TA = 25°C 9 6 3 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V VGS = -6V 10.0 5.0 VGS = -8V VGS = -10V 0 -50 0 -25 75 100 125 150 50 25 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature BSS84W Document number: DS30205 Rev. 11 - 2 2 of 3 www.diodes.com 0.0 -0.0 -0.6 -0.8 -0.4 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -0.2 1.0 October 2007 © Diodes Incorporated BSS84W Ordering Information (Notes 4 and 6) Part Number BSS84W-7-F Notes: Case SOT-323 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM NEW PRODUCT Marking Information K84 Date Code Key Year K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SOT-323 Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 0° 8° α All Dimensions in mm B C TOP VIEW G H K M J D L F Suggested Pad Layout Y Z G C X Dimensions Value (in mm) Z 2.8 G 1.0 X 0.7 Y 0.9 C 1.9 E 0.65 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. BSS84W Document number: DS30205 Rev. 11 - 2 3 of 3 www.diodes.com October 2007 © Diodes Incorporated