DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 5) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Gate ESD PROTECTED TO 3kV Gate Protection Diode TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Thermal Characteristics Symbol VDSS VGSS ID IDM Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Value 30 ±8 2.2 9 Units V V A A Value 650 192 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: S G Source Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±5 V μA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.45 ⎯ 1.0 V RDS (ON) ⎯ 62 70 150 90 110 200 mΩ |Yfs| VSD ⎯ ⎯ 5 ⎯ ⎯ 0.9 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 2.2A VGS = 2.5V, ID = 2A VGS = 1.5V, ID = 0.67A VDS =5V, ID = 2.2A VGS = 0V, IS = 1A Ciss Coss Crss ⎯ ⎯ ⎯ 290 66 35 ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads. 2. No purposefully added lead. Halogen and Antimony Free. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. 5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. DMN3200U Document number: DS31188 Rev. 4 - 2 1 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN3200U 10 9 9 8 8 ID, DRAIN CURRENT (A) 10 7 NEW PRODUCT 6 5 4 3 6 5 4 3 2 1 1 TA = 150°C TA = 85°C 0 0.5 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 7 2 0 VDS = 5V Pulsed TA = 25°C TA = -55°C 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 1.8 1.6 1.4 VGS = 1.5V 0.1 VGS = 2.5V 1.2 VGS = 4.5V 1.0 0.8 0.6 0.01 0.01 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 0.8 ID = 250µA C, CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 0.6 0.4 Ciss Coss 0.2 Crss 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMN3200U Document number: DS31188 Rev. 4 - 2 2 of 4 www.diodes.com 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 30 June 2008 © Diodes Incorporated DMN3200U IS, SOURCE CURRENT (A) 1 TA = 150°C 0.1 TA = 125°C TA = 85°C 0.01 TA = 25°C 0.001 TA = -55°C 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 6) Part Number DMN3200U-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM NEW PRODUCT 10 32N Date Code Key Year Code 32N = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2007 2008 2009 2010 2011 2012 U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A B C TOP VIEW G H K J DMN3200U Document number: DS31188 Rev. 4 - 2 M D F L 3 of 4 www.diodes.com SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm June 2008 © Diodes Incorporated DMN3200U Suggested Pad Layout Y NEW PRODUCT Z G C X Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3200U Document number: DS31188 Rev. 4 - 2 4 of 4 www.diodes.com June 2008 © Diodes Incorporated