2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) Case: SOT-23 Case Material: UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) • • • • SOT-23 D S G TOP VIEW Pin Out Configuration TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS ≤ 1.0MΩ Gate-Source Voltage Symbol VDSS VDGR Continuous Pulsed Continuous Drain Current Thermal Characteristics VGSS ID Electrical Characteristics Symbol PD RθJA TJ, TSTG @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: Value 300 417 -55 to +150 Units mW °C/W °C V mA @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Units V V @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Zero Gate Voltage Drain Current Value 60 60 ±20 ±40 240 @ TJ = 25°C Symbol Min Typ Max Unit Test Condition BVDSS IDSS 60 ⎯ 70 ⎯ ⎯ 1.0 500 V µA VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V IGSS ⎯ ⎯ ±10 nA VGS = ±15V, VDS = 0V VGS(th) RDS (ON) ⎯ 1.6 2.0 2.5 3 4 V Ω ID(ON) gFS 1.0 ⎯ ⎯ 0.8 80 1.0 ⎯ ⎯ ⎯ A mS VDS = VGS, ID = 250μA VGS = 10V, ID = 250mA VGS = 4.5V, ID = 200mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A Ciss Coss Crss ⎯ ⎯ ⎯ 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) ⎯ ⎯ 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 2N7002E Document number: DS30376 Rev. 8 - 2 1 of 4 www.diodes.com June 2010 © Diodes Incorporated 2N7002E 1.0 2.0 0.8 1.6 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (A) T A = -55°C 0.4 0.4 0 0 1 2 4 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 5 4 3 2 0 5 ID = 250mA ID = 75mA 1 0 3 4 5 6 7 1 2 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 2 Drain Current vs. Gate-Source Voltage 5 4 3 VGS = 4.5V 2 VGS = 10V 1 0 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 3 On Resistance vs. Gate-Source Voltage 0.2 0.6 0.8 0.4 ID, DRAIN CURRENT (A) Fig. 4 On Resistance vs. Drain Current 1.0 5 PD, POWER DISSIPATION (mW) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 125°C 0.8 0.2 0 TA = 25°C 1.2 0.6 4 3 VGS= 4.5V @ 200mA 2 VGS = 10V @ 250mA 1 350 300 250 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance vs. Junction Temperature 2N7002E Document number: DS30376 Rev. 8 - 2 2 of 4 www.diodes.com 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Max Power Dissipation vs. Ambient Temperature 0 25 June 2010 © Diodes Incorporated 2N7002E Ordering Information (Note 5) Part Number 2N7002E-7-F Notes: Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2003 P Jan 1 2004 R 2005 S Feb 2 Mar 3 K7B = Product Type Marking Code YM = Date Code Marking Y = Year (ex: P = 2003) M = Month (ex: 9 = September) YW K7B 2006 T Apr 4 2007 U May 5 2008 V Jun 6 Jul 7 2009 W Aug 8 2010 X Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Package Outline Dimensions SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm A B C H K M K1 D F J L G Suggested Pad Layout Y Z C X 2N7002E Document number: DS30376 Rev. 8 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 3 of 4 www.diodes.com June 2010 © Diodes Incorporated 2N7002E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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