DMN2230U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • Mechanical Data • • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 5) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) SOT-23 D G Maximum Ratings S TOP VIEW Internal Schematic TOP VIEW @TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 2.0 A IDM 7 A Symbol Value Units Drain Current (Note 1) Pulsed Drain Current (Note 4) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: PD 600 mW RθJA 208 °C/W TJ, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, or minimum recommended pad layout 2. No purposefully added lead. Halogen and Antimony Free. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Repetitive rating, pulse width limited by junction temperature. 5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. DMN2230U Document number: DS31180 Rev. 4 - 2 1 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN2230U Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±12V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V VDS = VCS, ID = 250μA ⎯ 81 113 170 110 145 230 mΩ NEW PRODUCT OFF CHARACTERISTICS (Note 6) VGS = 0V, ID = 10μA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) VGS = 4.5V, ID = 2.5A VGS = 2.5V, ID = 1.5A VGS = 1.8V, ID = 1.0A Forward Transfer Admittance |Yfs| ⎯ 5 ⎯ S VDS =5V, ID = 2.4A Diode Forward Voltage (Note 6) VSD ⎯ 0.8 1.1 V VGS = 0V, IS = 1.05A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 188 ⎯ pF Output Capacitance Coss ⎯ 44 ⎯ pF pF Reverse Transfer Capacitance Crss ⎯ 30 ⎯ Turn-On Delay Time td(on) ⎯ 8 ⎯ tr ⎯ 3.8 ⎯ td(off) ⎯ 19.6 ⎯ tf ⎯ 8.3 ⎯ Rise Time Turn-Off Delay Time Fall Time Notes: ns VDS = 10V, VGS = 0V f = 1.0MHz VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V, RG = 6Ω 6. Short duration pulse test used to minimize self-heating effect. 10 8 7 8 6 5 6 4 4 3 2 2 1 0 0 0 DMN2230U Document number: DS31180 Rev. 4 - 2 2 of 4 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 4 June 2008 © Diodes Incorporated DMN2230U 1.8 1.6 R DS(ON) NORMALIZED RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.5V ID = 1.5A VGS = 1.8V 0.1 VGS = 2.5V VGS = 4.5V VGS = 4.5V ID = 2.5A 1.4 1.2 VGS = 1.8V ID = 1.0A 1 0.8 0.01 0.01 0.1 1 ID, DRAIN-SOURCE CURRENT Fig. 3 On-Resistance vs. Drain-Source Current & Gate Voltage -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 1,000 f = 1MHz 0.8 ID = 250µA C, TOTAL CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.6 -50 10 1 0.6 0.4 0.2 Ciss 100 Coss Crss 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation with Temperature 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 20 10 IS, SOURCE CURRENT (A) NEW PRODUCT 1 1 0.1 0.01 0.001 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMN2230U Document number: DS31180 Rev. 4 - 2 3 of 4 www.diodes.com June 2008 © Diodes Incorporated DMN2230U Ordering Information (Note 7) Part Number DMN2230U-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM NEW PRODUCT Marking Information 22N Date Code Key (If Applicable) Year 2007 Code U Month Code 22N = Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September 2008 V Jan 1 Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D Package Outline Dimensions A SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 0° 8° α All Dimensions in mm D B C G TOP VIEW S E D G H K J M L Suggested Pad Layout Z Value (in mm) 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 Dimensions Y Z G C X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2230U Document number: DS31180 Rev. 4 - 2 4 of 4 www.diodes.com June 2008 © Diodes Incorporated