DG271B Vishay Siliconix High-Speed Quad Monolithic SPST CMOS Analog Switch FEATURES D D D D D BENEFITS Fast Switching tON: 55 ns Low Charge Injection: 5 pC Low rDS(on): 32 W TTL/CMOS Compatible Low Leakage: 50 pA APPLICATIONS D Fast Settling Times D Reduced Switching Glitches D High Precision D D D D D D D D High-Speed Switching Sample/Hold Digital Filters Op Amp Gain Switching Flight Control Systems Automatic Test Equipment Choppers Communication Systems DESCRIPTION The DG271B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. Built on the Vishay Siliconix’ proprietary high voltage silicon gate process to achieve superior on/off performance, each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latchup. The DG271B has a redesign internal regulator which improves start-up over the DG271. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with 100% matte tin device terminations, the lead (Pb)-free “—E3” suffix is being used as a designator. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line and SOIC IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V− 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 TRUTH TABLE Logic Switch 0 ON 1 OFF Logic “0” v 0.8 08V 2.4 4V Logic “1” w 2 Top View ORDERING INFORMATION Document Number: 70966 S-42137—Rev. B, 15-Nov-04 Temp Range Package 0 to 70_C 16-Pin Plastic DIP −40 40 to 85_C 16 Pin Narrow SOIC 16-Pin Part Number DG271BCJ—E3 DG271BDY—E3 DG271BDY-T1—E3 (with Tape and Reel) www.vishay.com 1 DG271B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . (V−) −2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (DY Suffix) . . . . . . . . . . . . . . . . . . . −65 to 150_C (CJ Suffix) . . . . . . . . . . . . . . . . . . . −65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa C, D Suffix Test Conditions Unless Specified Parameter 0 to 70_C −40 to 85_C V+ = 15 V, V V V− V = −15 15 V VIN = 2.4 V, 0.8 Vf Tempb Mind VANALOG Full −15 rDS(on) IS = 1 mA, VD = "10 V Room Full Symbol Typc Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance ID(off) Channel On Leakage Current ID(on) + IS(on) V 50 75 W Room Full −1 −20 "0.05 1 20 Room Full −1 −20 "0.05 1 20 VS = VD = "14 V Room Full −1 −20 "0.05 1 20 IS(off) Switch Off Leakage Current 15 32 VD = "14 V V, VS = #14 V nA Digital Control Input Current with Voltage High IINH Input Current with Voltage Low IINL VIN = 2 V Full −1 0.010 1 VIN = 15 V Full −1 0.010 1 VIN = 0 V Full −1 0.010 1 Room Full 55 65 80 Room Full 50 65 80 Room −5 8 mA m Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Charge Injection Q VS = "10 V See Figure 3 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W See Figure 3 Source Off Capacitance CS(off) CD(off) VS = 0 V, VIN = 5 V f = 1 MHz Room Drain Off Capacitance Room 8 Channel On Capacitance CD(on) VD = VS = 0 V, VIN = 0 V Room 30 Off Isolation OIRR 85 XTALK CL = 10 pF, RL = 1 kW f = 100 kHz See Figures 4 and 5 Room Crosstalk Room 100 Room Full 5.5 ns pC pF p dB Supply Positive Supply Current I+ Negative Supply Current I− All Channels On or Off VIN = 5 V or 0 V Room Full −6 −8 −3.4 7.5 9 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com 2 Document Number: 70966 S-42137—Rev. B, 15-Nov-04 DG271B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply Voltages 60 50 "5 V 40 "10 V 30 "15 V 20 "20 V 10 −8 −4 0 4 8 12 16 V+ = 15 V V− = −15 V 40 125_C 85_C 30 25_C 20 0_C −55_C 10 0 −20 −16 −12 rDS(on) vs. VD and Temperature 50 rDS(on) − Drain-Source On-Resistance (W) rDS(on) − Drain-Source On-Resistance (W) 70 0 −15 20 −10 −5 VD − Drain Voltage (V) 0 5 10 15 VD − Drain Voltage (V) Input Switching Threshold vs. Supply Voltage Leakage Currents vs. Temperature 10 nA 2.5 ID(on) 2 Leakage V IN ( V ) 1 nA 1.5 1 IS(off), ID(off) 100 pA 0.5 0 "4 "6 "8 "10 "12 "14 "16 10 pA "18 "20 −55 −35 −15 Positive/Negative Supplies (V) 65 85 105 125 55 tON 50 Switching Time (ns) 50 Switching Time (ns) 45 Switching Time vs. Power Supply Voltage Switching Times vs. Temperature 45 tOFF 40 45 tON 40 35 35 30 −55 25 Temperature (_C) 55 V+ = 15 V V− = −15 V 5 tOFF 30 −25 0 25 50 Temperature (_C) Document Number: 70966 S-42137—Rev. B, 15-Nov-04 75 100 125 "4 "6 "8 "10 "12 "14 "16 "18 "20 Supply Voltage (V) www.vishay.com 3 DG271B Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ SX 5V Reg V− Level Shift/ Drive V+ DX INX GND V− FIGURE 1. TEST CIRCUITS +15 V Logic Input V+ 10 V S D VO IN 5V GND V− RL 1 kW CL 35 pF Switch Input 5V tr <20 ns tf <20 ns 50% 0V VS tOFF VO 90% Switch Output VO tON CL (includes fixture and stray capacitance) −15 V VO = VS RL RL + rDS(on) FIGURE 2. Switching Time Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70966. www.vishay.com 4 Document Number: 70966 S-42137—Rev. B, 15-Nov-04