SavantIC Semiconductor Product Specification BU4508DF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V IC Collector current (DC) 8 A ICM Collector current -peak 15 A IB Base Collector current (DC) 4 A IBM Base current-peak 6 A Ptot Total power dissipation 45 W Tj Tstg Max.operating junction temperature Storage temperature TC=25 150 -65~150 SavantIC Semiconductor Product Specification BU4508DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A 3 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.25A 1.03 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA hFE-1 DC current gain IC=0.5A ; VCE=5V hFE-2 DC current gain IC=5A ; VCE=5V Diode forward voltage IF=5A VF CONDITIONS MIN TYP. MAX V 13.5 V 7 4.2 7.3 2.2 2 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 BU4508DF