SAVANTIC BU4508DF

SavantIC Semiconductor
Product Specification
BU4508DF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
IC
Collector current (DC)
8
A
ICM
Collector current -peak
15
A
IB
Base Collector current (DC)
4
A
IBM
Base current-peak
6
A
Ptot
Total power dissipation
45
W
Tj
Tstg
Max.operating junction temperature
Storage temperature
TC=25
150
-65~150
SavantIC Semiconductor
Product Specification
BU4508DF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0,L=25mH
800
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=1.25A
3
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.25A
1.03
V
ICES
Collector cut-off current
VCE=BVCES; VBE=0
TC=125
1.0
2.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Diode forward voltage
IF=5A
VF
CONDITIONS
MIN
TYP.
MAX
V
13.5
V
7
4.2
7.3
2.2
2
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
BU4508DF