CED01N7/CEU01N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 700 Units V VGS ±30 V ID 0.8 A IDM 3.0 A 31 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.25 W/ C TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 4 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 2. 2011.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CED01N7/CEU01N7 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 700 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 700V, VGS = 0V 1 µA IGSSF VGS = 30V, VDS = 0V 10 uA IGSSR VGS = -30V, VDS = 0V -10 uA 4 V 18 Ω Off Characteristics V On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 0.5A 2 16 Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 135 pF 45 pF 20 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω 19 38 ns 13 26 ns ns 24 48 Turn-Off Fall Time tf 35 70 ns Total Gate Charge Qg 6 7.8 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V,ID = 0.4A, VGS = 10V 1 nC 4.4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 0.8A Notes : a.Drain current limited by maximum junction temperature. b.Repetitive Rating : Pulse width limited by maximum junction temperature. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 0.8 A 1.5 V CED01N7/CEU01N7 2.0 25 C VGS=10,8,7V 1.0 ID, Drain Current (A) ID, Drain Current (A) 1.2 0.8 0.6 0.4 VGS=4V 0.2 0 0.0 4 8 12 16 20 24 1 2 -55 C 3 4 5 6 7 Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 120 80 Coss 40 Crss 0 5 10 15 20 25 3.0 2.5 ID=0.5A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C Figure 1. Output Characteristics IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0.4 VGS, Gate-to-Source Voltage (V) 160 1.2 0.8 VDS, Drain-to-Source Voltage (V) 200 1.3 1.2 0.0 240 0 1.6 -25 0 25 50 75 100 125 150 VGS=0V 10 0 10 -1 10 -2 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=0.4A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED01N7/CEU01N7 6 4 2 0 0 1 2 3 4 5 10 1 10 0 10 -1 RDS(ON)Limit 10 6 100ms 1ms 10ms DC TC=25 C TJ=150 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 PDM 0.1 -1 t1 0.05 0.02 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -2 t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 3