CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220F full-pak for through hole. G G D S ABSOLUTE MAXIMUM RATINGS Parameter CEF SERIES TO-220F Tc = 25 C unless otherwise noted Symbol Limit 200 Units V VGS ±20 V ID 7.2 A IDM 24 A 35 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C S PD 0.28 W/ C TJ,Tstg -55 to 150 C Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 3.6 C/W Thermal Resistance, Junction-to-Ambient RθJA 65 C/W Operating and Store Temperature Range Thermal Characteristics Parameter 2003.April http://www.cetsemi.com 4 - 206 CEFF630 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 200 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 200V, VGS = 0V 25 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 300 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 3.5A gFS VDS = 10V, ID = 3.5A 2 270 3 S c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 680 pF 105 pF 40 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 100V, ID = 5A, VGS = 10V, RGEN = 50Ω 25 60 ns 75 120 ns 70 80 ns Turn-Off Fall Time tf 35 50 ns Total Gate Charge Qg 27 33 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 160V, ID = 5.9A, VGS = 10V 4 nC 14 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 5.9A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 4 - 207 5.9 A 1.5 V 4 CEFF630 20 12 ID, Drain Current (A) ID, Drain Current (A) 25 C 10 8 VGS=10,8,6,5V 6 VGS=4V 4 15 10 -55 C TJ=125 C 5 2 0 0 0 1 2 3 4 5 0 6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 5 Figure 2. Transfer Characteristics 600 450 300 Coss 150 Crss 0 0 5 10 15 20 25 3.0 2.5 ID=3.5A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics Ciss ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 VGS, Gate-to-Source Voltage (V) 750 1.2 2 VDS, Drain-to-Source Voltage (V) 900 1.3 1 VGS=0V 10 10 10 -25 0 25 50 75 100 125 1 0 -1 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 208 10 10 VDS=160V ID=5.9A 2 4 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEFF630 6 4 2 10µs RDS(ON)Limit 100µs 10 1 1ms 10ms DC 10 TC=25 C TJ=150 C Single Pulse 0 0 0 4 8 12 16 20 24 28 10 0 10 1 10 2 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 t1 0.02 0.01 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 209 10 0 10 1