Si4916DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V 9.3 6.6 8.9 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT® Plus Integrated Schottky • 100 % Rg Tested APPLICATIONS • DC/DC Converters - Notebook SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 D1 SO-8 G1 D1 1 8 G1 D1 2 7 S1/D2 G2 3 6 S1/D2 S2 4 5 S1/D2 N-Channel 1 MOSFET S1/D2 Schottky Diode G2 Top View N-Channel 2 MOSFET Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C)a, b TC = 25 °C 10 10.5 8 8.3 TA = 25 °C IDM Pulsed Drain Current (10 µs Pulse Width) TC = 25 °C TA = 25 °C IS PulseD Source-Drain Current ISM Single-Pulse Avalanche Current IAS Single-Pulse Avalanche Energy L = 0.1 mH TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range 7.8a, b, c 6.3a, b, c 40 40 3 3.2 1.7a, b, c 1.8a, b, c 40 TJ, Tstg A 40 15 EAS TC = 25 °C Maximum Power Dissipationa, b 7.5 a, b, c 6a ,b, c TA = 70 °C Continuous Source-Drain Diode Current V TC = 70 °C ID Unit 11.2 mJ 3.3 3.5 2.1 2.2 a, b, c 2.0a, b, c 1.2a, b, c 1.3a, b, c 1.9 - 55 to 150 W °C Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 1 Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Channel-1 Typ. Max. Typ. Max. t ≤ 10 s RthJA 54 65 47 60 Steady State RthJF 32 38 30 35 Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Channel-2 Symbol Parameter Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2. MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 µA ΔVDS/TJ ID = 250 µA VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage ΔVGS(th)/TJ VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = 0 V, VGS = 20 V IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb Drain-Source On-State Resistanceb ID(on) RDS(on) Forward Transconductanceb gfs Diode Forward Voltageb VSD 30 Ch-2 30 VDS = 5 V, VGS = 10 V V Ch-1 24 Ch-2 25 Ch-1 -6 Ch-2 VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Ch-1 mV/°C -6 Ch-1 1.5 Ch-2 1.5 3.0 V 2.7 Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 100 Ch-1 15 Ch-2 nA µA 2000 Ch-1 20 Ch-2 20 A VGS = 10 V, ID = 10 A Ch-1 0.0145 0.018 VGS = 10 V, ID = 10.5 A Ch-2 0.015 0.018 VGS = 4.5 V, ID = 8.5 A Ch-1 0.019 0.023 VGS = 4.5 V, ID = 9.3 A Ch-2 0.018 0.022 VDS = 15 V, ID = 10 A Ch-1 30 VDS = 15 V, ID = 10.5 A Ch-2 35 IS = 1.7 A, VGS = 0 V Ch-1 0.75 1.1 IS = 1 A, VGS = 0 V Ch-2 0.47 0.5 Ch-1 6.6 10 Ch-2 8.9 14 Ch-1 2.9 Ch-2 3.4 Ch-1 2.3 Ω S V Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance www.vishay.com 2 Qg Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Qgs Qgd Rg Channel-2 VDS = 15 V, VGS = 4.5 V, ID = - 10.5 A Ch-2 nC 2.4 Ch-1 0.5 1.9 2.9 Ch-2 0.5 2.3 3.5 Ω Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 Si4916DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Typ.a Max. Ch-1 8 15 Ch-2 9 15 Ch-1 11 18 Ch-2 13 20 Ch-1 21 32 Ch-2 27 40 Ch-1 6 10 Ch-2 9 15 Ch-1 28 40 35 Test Conditions Min. Unit Dynamica Turn-On Delay Time td(on) tr Rise Time Turn-Off Delay Time td(off) tf Fall Time trr Source-Drain Reverse Recovery Time Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Channel-1 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω Channel-2 VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.3 A, dI/dt = 100 A/µs IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 24 IF = 1.3 A, dI/dt = 100 A/µs Ch-1 17 IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 12 IF = 1.3 A, dI/dt = 100 A/µs Ch-1 12 IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 11 IF = 1.3 A, dI/dt = 100 A/µs Ch-1 16 IF = 2.2 A, dI/dt = 100 µA/µs Ch-2 13 ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions Typ. Max. IF = 1.0 A Min. 0.47 0.50 IF = 1.0 A, TJ = 125 °C 0.36 0.42 VR = 30 V 0.004 0.100 VR = 30 V, TJ = 100 °C 0.7 10 VR = - 30 V, TJ = 125 °C 3.0 20 VR = 10 V 50 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 3 Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 thru 5 V 35 35 30 30 I D – Drain Current (A) I D – Drain Current (A) 4V 25 20 15 10 5 20 15 TC = 125 °C 10 25 °C 5 3V 0 0.00 25 - 55 °C 0 0.30 0.60 0.90 1.20 1.50 0 1 VDS – Drain-to-Source Voltage (V) Output Characteristics 4 5 1050 900 C – Capacitance (pF) 0.022 VGS = 4.5 V 0.019 0.016 VGS = 10 V Ciss 750 600 450 300 Coss 0.013 Crss 150 0 0.010 0 5 10 15 20 25 30 35 0 40 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Drain Current Capacitance 6 1.6 ID = 7.5 A VGS = 10 V and 4.5 V ID = 7.5 A 5 4 VDS = 15 V 3 2 (Normalized) 1.4 VDS = 10 V R DS(on) – On-Resistance V GS – Gate-to-Source Voltage (V) 3 Transfer Characteristics 0.025 RDS(on) – On-Resistance (Ω) 2 VGS – Gate-to-Source Voltage (V) 1.2 1.0 0.8 1 0 0 www.vishay.com 4 1 2 3 4 5 6 7 8 9 0.6 - 50 - 25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 40 RDS(on) – On-Resistance (Ω) I S – Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.1 0.0 0.04 0.03 ID = 7.5 A 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) VSD – Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 120 0.2 100 0.0 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.2 80 60 - 0.4 40 - 0.6 20 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ – Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 IDM Limited Limited by RDS(on)* I D – Drain Current (A) 10 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 1s 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 5 Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot www.vishay.com 6 Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 35 35 VGS = 10 thru 4 V 30 I D – Drain Current (A) I D – Drain Current (A) 30 25 20 15 10 3V 5 25 20 15 TC = 125 °C 10 25 °C 5 - 55 °C 0 0.0 0.3 0.6 0.9 1.2 0 0.0 1.5 0.5 1.0 1.5 2.0 2.5 3.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.025 1400 0.022 1120 3.5 4.0 C – Capacitance (pF) R DS(on) – On-Resistance (Ω) Ciss VGS = 4.5 V 0.019 VGS = 10 V 0.016 840 560 Coss 280 0.013 Crss 0 0.010 0 5 10 15 20 25 30 35 0 40 5 10 ID – Drain Current (A) On-Resistance vs. Drain Current 25 30 1.6 ID = 7.8 A 5 VDS = 10 V 4 VDS = 15 V 3 2 (Normalized) 1.4 R DS(on) – On-Resistance V GS – Gate-to-Source Voltage (V) 20 Capacitance 6 VGS = 10 V and 4.5 V ID = 7.8 A 1.2 1.0 0.8 1 0 0.0 15 VDS – Drain-to-Source Voltage (V) 2.2 4.4 6.6 8.8 11.0 0.6 - 50 - 25 0 25 50 75 100 125 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 150 www.vishay.com 7 Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 TJ = 150 °C 10 R DS(on) – On-Resistance (Ω) I S – Source Current (A) 40 TJ = 25 °C 1 0.1 0.0 0.04 0.03 ID = 7.8 A 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 VSD – Source-to-Drain Voltage (V) 6 8 10 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 10 100 1 80 10- 1 10- 2 Power (W) I R – Reverse Current (mA) 4 30 V 40 24 V 10- 3 60 20 10- 4 10- 5 0 0 25 50 75 100 125 150 0.001 0.01 TJ – Temperature (°C) 0.1 1 10 Time (s) Reverse Current vs. Junction Temperature Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM Limited I D – Drain Current (A) 10 1 ms 1 10 ms ID(on) Limited 100 ms 0.1 1s TC = 25 °C Single Pulse 10 s DC BVDSS Limited 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area www.vishay.com 8 Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 2 10- 3 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74331. Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 9 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 VISHAY SILICONIX TrenchFET® Power MOSFETs Application Note 808 Mounting LITTLE FOOT®, SO-8 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. 0.288 7.3 0.050 1.27 0.196 5.0 0.027 0.69 0.078 1.98 0.2 5.07 Figure 1. Single MOSFET SO-8 Pad Pattern With Copper Spreading Document Number: 70740 Revision: 18-Jun-07 0.050 1.27 0.088 2.25 0.088 2.25 0.027 0.69 0.078 1.98 0.2 5.07 Figure 2. Dual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. www.vishay.com 1 APPLICATION NOTE In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board. 0.288 7.3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1