CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com Synchronous Buck NexFET™ Power Stage Check for Samples: CSD97370AQ5M FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • 1 90% System Efficiency at 25A Input Voltages up to 22V High Frequency Operation (Up To 2MHz) Incorporates Power Block Technology High Density – SON 5-mm × 6-mm Footprint Low Power Loss 2.8W at 25A Ultra Low Inductance Package System Optimized PCB Footprint Universal 5V PWM Signal Compatibility 3-State PWM Input Integrated Bootstrap Diode Pre-Bias Start-Up Protection Shoot Through Protection RoHS Compliant – Lead Free Terminal Plating Halogen Free Synchronous Buck Converters Multiphase Synchronous Buck Converters POL DC-DC Converters Memory and Graphic Cards Desktop and Server VR11.x and VR12.x V-Core Synchronous Buck Converters ORDERING INFORMATION Device Package Media CSD97370AQ5M SON 5-mm × 6-mm Plastic Package 13-Inch Reel Qty Ship 2500 Tape and Reel spacer spacer spacer spacer DESCRIPTION The CSD97370AQ5M NexFET Power Stage is an optimized design for use in a high power, high density Synchronous Buck converter. This product integrates an enhanced gate driver IC and Power Block Technology to complete the power stage switching function. This combination produces a high current, high efficiency, high speed switching device and delivers an excellent thermal solution in a small 5-mm × 6-mm outline package due to its large ground based thermal pad. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design. spacer spacer 100 6 90 5 VGS = 5V VIN = 12V VOUT = 1.2V LOUT = 0.3µH fSW = 500kHz TA = 25ºC 80 70 60 4 3 2 50 40 Figure 1. Application Diagram Power Loss (W) Efficiency (%) spacer 1 0 5 10 15 Output Current (A) 20 25 0 Figure 2. Efficiency and Power Loss 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011, Texas Instruments Incorporated CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) TA = 25°C (unless otherwise noted) VALUE MIN VIN to PGND (2) VSW to PGND , VIN to VSW VSW to PGND (10ns) UNIT MAX 30 V -0.8 30 V -7 32 V VDD to PGND –0.3 6 V ENABLE to PGND (3) –0.3 VDD + 0.3 V –0.3 VDD + 0.3 V –0.3 VDD + 0.3 V 2 kV 500 V PWM to PGND (3) BOOT to BOOT_R (3) ESD Rating Human Body Model (HBM) Charged Device Model (CDM) Power Dissipation, PD 12 W Operating Temperature Range, TJ -40 150 °C Storage Temperature Range, TSTG –55 150 °C (1) (2) (3) Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability. VIN to VSW Max = 32V for 10ns Should not exceed 6V RECOMMENDED OPERATING CONDITIONS TA = 25° (unless otherwise noted) Parameter Conditions MIN MAX Gate Drive Voltage, VDD 4.5 5.5 V Input Supply Voltage, VIN 3.3 22 V 5.5 V 40 A Output Voltage, VOUT Continuous Output Current, IOUT Peak Output Current, IOUT-PK (2) Switching Frequency, fSW VIN = 12V, VDD = 5V, VOUT = 1.2V, fSW = 500kHz, LOUT = 0.3µH (1) 60 CBST = 0.1µF (min) 200 On Time Duty Cycle A 2000 kHz 85% Minimum PWM On Time 40 Operating Temperature –40 (1) (2) UNIT ns °C 125 Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins. System conditions as defined in Note 1. Peak Output Current is applied for tp = 50µs. THERMAL INFORMATION TA = 25°C (unless otherwise noted) PARAMETER RθJC RθJB (1) 2 Thermal Resistance, Junction-to-Case (Top of package) Thermal Resistance, Junction-to-Board (1) MIN TYP MAX UNIT 20 °C/W 2 °C/W RθJB value based on hottest board temperature within 1mm of the package. Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com ELECTRICAL CHARACTERISTICS TA = 25°C, VDD = POR to 5.5V (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT PLOSS Power Loss (1) VIN = 12V, VDD = 5V, VOUT = 1.2V, IOUT = 25A, fSW = 500kHz, LOUT = 0.3µH , TJ = 25°C – 2.8 3.3 W Power Loss (2) VIN = 12V, VDD = 5V, VOUT = 1.2V, IOUT = 40A, fSW = 500kHz, LOUT = 0.3µH , TJ = 125°C – 8 10 W ENABLE = 0V, VDD = 5V – – 100 µA Standby Supply Current ( IDD) ENABLE = 0V, PWM = 0V – 1 5 µA Operating Supply Current (IDD) ENABLE = 5V, PWM = 50% Duty cycle, fSW = 500kHz – 16 20 mA V VIN VIN Quiescent Current (IQ) VDD POWER-ON RESET AND UNDER VOLTAGE LOCKOUT – 3.6 3.9 UVLO (VDD Falling) 3.4 3.5 – Hysteresis 100 – 250 mV – 600 1000 ns Power on Reset (VDD Rising) Startup Delay (3) ENABLE = PWM = 5V V ENABLE 0.8 1 – V – 1.6 2.0 V – 580 – mV – 100 – kΩ Rising Propagation Delay (tPDH) – 600 – ns Falling Propagation Delay (tPDL) – 200 – ns Logic Level Low Threshold (VIL) Logic Level High Threshold (VIH) Threshold Hysteresis Weak Pull-down Impedance Schmitt Trigger Input PWM = 5V (See Figure 5) PWM IPWMH PWM = 5V – 450 580 µA IPWML PWM = 0V – –450 –580 µA PWM Logic Level High (VPWMH ) – – 4 V PWM Logic Level Low (VPWML ) 0.8 – – V – 2.4 – V – 100 – ns 3-State Shutdown Hold-off Time (t3HT) – 100 – ns 3-State Shutdown Propagation Delay (t3SD) – 650 – ns 3-State Recovery Propagation Delay (t3RD) – 75 – ns VDD – VBOOT, IF = 20mA – 180 360 mV VBOOT – VDD = 20V – 0.15 1 µA PWM 3-State open Voltage PWM to VSW propagation delay (tPDLH and tPDHL) VDD = POR to 5.5V, CPWM = 10pF (See Figure 6) BOOTSTRAP SWITCH Forward Voltage (VFBOOT) Reverse Leakage (IRBOOT) (1) (2) (3) (2) Measurement made with six 10-µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins. Specified by design POR to VSW rising Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M 3 CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com PIN CONFIGURATION SON 5mm ´ 6mm 22-Pin Package (Top View) ENABLE 1 22 PWM NC VDD 2 21 NC 3 20 NC NC 4 19 BOOT NC VSW 5 18 BOOT_R 17 VIN VSW 7 16 VIN VSW 8 15 VIN VSW 9 14 VIN VSW 10 13 VIN VSW 11 12 VIN 6 PGND 23 P0125-01 PIN DESCRIPTION PIN NO. 4 DESCRIPTION NAME 1 ENABLE Enables device operation. If ENABLE=logic HIGH, turns on the device. If ENABLE=logic LOW, the device is turned off and MOSFET gates are actively pulled low. An internal 100kΩ pull down resistor will pull the ENABLE pin LOW if left floating. 2 NC Not for electrical connection, connect to floating pad only. 3 VDD Supply Voltage to Gate Drivers and internal circuitry. 4 NC Not for electrical connection, connect to floating pad only. 5 NC Not for electrical connection, connect to floating pad only. 6 VSW Voltage Switching Node – pin connection to the output inductor. 7 VSW Voltage Switching Node – pin connection to the output inductor. 8 VSW Voltage Switching Node – pin connection to the output inductor. 9 VSW Voltage Switching Node – pin connection to the output inductor. 10 VSW Voltage Switching Node – pin connection to the output inductor. 11 VSW Voltage Switching Node – pin connection to the output inductor. 12 VIN Input Voltage Pin. Connect input capacitors close to this pin. 13 VIN Input Voltage Pin. Connect input capacitors close to this pin. 14 VIN Input Voltage Pin. Connect input capacitors close to this pin. 15 VIN Input Voltage Pin. Connect input capacitors close to this pin. 16 VIN Input Voltage Pin. Connect input capacitors close to this pin. 17 VIN Input Voltage Pin. Connect input capacitors close to this pin. 18 BOOT_R 19 BOOT Bootstrap capacitor connection. Connect a minimum 0.1µF 16V X5R, ceramic cap from BOOT to BOOT_R pins. The bootstrap capacitor provides the charge to turn on the Control FET. The bootstrap diode is integrated. 20 NC Not for electrical connection, connect to floating pad only. 21 NC Not for electrical connection, connect to floating pad only. 22 PWM Pulse Width modulated 3-state input from external controller. Logic Low sets Control FET gate low and Sync FET gate high. Logic High sets Control FET gate high and Sync FET gate Low. Open or High Z sets both MOSFET gates low if greater than the 3-State Shutdown Hold-off Time (t3HT) 23 PGND Power Ground Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com VDD Boot VIN Control FET PWM EN Boot_R UVLO and Control Logic Shoot Through Control VSW Sync FET PGND B0433-01 Figure 3. Functional Block Diagram FUNCTIONAL DESCRIPTION POWERING CSD97370AQ5M AND GATE DRIVERS An external VDD voltage is required to supply the integrated gate driver IC and provide the necessary gate drive power for the MOSFETS. The gate driver IC is capable of supplying in excess of 4 Amps peak current into the MOSFET gates to achieve fast switching. A 1uF 10V X5R or higher ceramic capacitor is recommended to bypass VDD pin to PGND. A bootstrap circuit to provide gate drive power for the Control FET is also included. The bootstrap supply to drive the Control FET is generated by connecting a 100nF 16V X5R ceramic capacitor between BOOT and BOOT_R pins. An optional RBOOT resistor which can be used to slow down the turn on speed of the Control FET and reduce voltage spikes on the Vsw node. A typical 1Ω to 4.7Ω value is a compromise between switching loss and VSW spike amplitude. UVLO (Under Voltage Lock Out) The VDD supply is monitored for UVLO conditions and both Control FET and Sync FET gates are held low until adequate supply is available. An internal comparator evaluates the VDD voltage level and if VDD is greater than the Power On Reset threshold (VPOR) the gate driver becomes active. If VDD is less than the UVLO threshold, the gate driver is disabled and the internal MOSFET gates are actively driven low. At the rising edge of the VDD voltage, both Control FET and Sync FET gates will be actively held low during VDD transitions between 1.0V to VPOR. This region is referred to the Gate Drive Latch Zone (see Figure 4). In addition, at the falling edge of the VDD voltage, both Control FET and Sync FET gates are actively held low during the UVLO to 1.0V transition. The Power Stage CSD97370AQ5M device must be powered up and Enabled before the PWM signal is applied. VDD VPOR Gate Drive Latch Zone 1.0V UVLO 1.0V T0487-01 Figure 4. POR and UVLO Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M 5 CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com ENABLE The ENABLE pin is TTL compatible. The logic level thresholds are sustained under all VDD operating conditions between VPOR to VDD. In addition, if this pin is left floating, a weak internal pull down resistor of 100kΩ will pull the ENABLE pin below the logic level low threshold. The operational functions of this pin should follow the timing diagram outlined in Figure 5. A logic level low will actively hold both Control FET and Sync FET gates low and VDD pin should typically draw less than 5µA. POWER UP SEQUENCING If the ENABLE signal is used, it is necessary to ensure proper co-ordination with the ENABLE and soft-start features of the external PWM controller in the system. If the CSD97370AQ5M was disabled through ENABLE without sequencing with the PWM IC controller, the buck converter output will have no voltage or fall below regulation set point voltage. As a result, the PWM controller IC delivers Max duty cycle on the PWM line. If the Power Stage CSD97370AQ5M is re-enabled by driving the ENABLE pin high, there will be an extremely large input inrush current when the output voltage builds back up again. The input inrush current might have undesirable consequences such as inductor saturation, driving the input power supply into current limit or even catastrophic failure of the CSD97370AQ5M device. Disabling the PWM controller is recommended when the CSD97370AQ5M is disabled. The PWM controller should always be re-enabled by going through soft-start routine to control and minimize the input inrush current and reduce current and voltage stress on all buck converter components. It is recommended that the external PWM controller be disabled when CSD97370AQ5M is disabled or nonoperational because of UVLO. PWM The input PWM pin incorporates a 3-State function. The Control FET and Sync FET gates are forced low if the PWM pin is left floating for more than the 3-State Hold off time (t3HT), typically 100ns. This requires the source impedance of the driving PWM signal to be a minimum of 250kΩ when in 3-State mode. Operation in and out of 3-State mode should follow the timing diagram outlined in Figure 6. Both VPWML and VPWMH threshold levels are set to accommodate both 3.3V and 5V logic controllers. During normal operation, the PWM signal should be driven to logic levels Low and High with a maximum of 220Ω/320Ω sink/source impedance respectively. GATE DRIVERS The CSD97370AQ5M has an internal high-performance gate driver IC that ensures minimum MOSFET dead-time while eliminating potential shoot-through currents. Propagation delays between the Control FET and Sync FET gates are kept to a minimum to minimize body diode conduction and improve efficiency. The gate driver IC incorporates an adaptive shoot through protection scheme which ensures that neither MOSFET is turned on while the other one is still conducting at the same time, preventing cross conduction. See Table 1. Table 1. Truth Table ENABLE PWM CONTROL FET GATE SYNC FET GATE VSW L X L L 3-State H <Min ON time L L 3-State H L L H PGND H 3-State L L 3-State H H H L VIN L = Logic Low; H = Logic High; X = Don't care; minimum on time = 40ns START UP IN PRE-BIASED OUTPUT VOLTAGE The CSD97370AQ5M incorporates a simple pre-bias feature to protect against the discharging of a prebiased output voltage and inducing large negative inductor currents. After the Power On Reset threshold is crossed and the ENABLE pin is set to logic level high, both internal MOSFETs are actively held low until the PWM pin receives a signal that crosses logic level high threshold and meets the minimum on time criteria (see the Electrical Characteristics Table). This allows the PWM control IC to provide a soft start routine that creates a monotonic startup of the output voltage. The pre-bias feature is enabled for a single event and subsequent PWM signals creates normal switching of the internal MOSFETs (see Table 1). To reactivate the pre-bias feature, the ENABLE pin needs to be pulled below logic level low or the VDD supply voltage needs to cross UVLO. 6 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com 90% tPDL ENABLE tPDH 10% 90% VSW 10% T0488-01 Figure 5. CSD97370AQ5M ENABLE Timing Diagram (VDD = PWM = 5V) spacer spacer spacer spacer spacer spacer PWM 3-State Window VPWMH PWM VPWML t3RD t3HT + t3SD VOUT VSW tPDLH tPDHL VOUT t3RD t3HT + t3SD T0489-01 Figure 6. CSD97370AQ5M PWM Timing Diagram Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M 7 CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com TYPICAL CHARACTERISTICS Test conditions: VIN = 12V, VDD = 5V, fSW= 500kHz, VOUT = 1.2V, LOUT = 0.3μH, DCR = 0.54mΩ, TJ = 125°C spacer 10 1.4 Max Typ 9 1.3 Power Loss, Normalized 8 Power Loss (W) 7 6 5 4 3 1.2 1.1 1 0.9 0.8 0.7 2 0.6 1 0.5 0 0 5 10 15 20 25 Output Current (A) 30 35 0.4 −50 40 −25 50 45 45 40 40 35 35 Output Current (A) Output Current (A) 50 75 100 125 150 Figure 8. Power Loss vs Temperature 50 30 25 20 15 400LFM 200LFM 100LFM Nat Conv 5 25 TC − Junction Temperature − ºC Figure 7. Power Loss vs Output Current 10 0 30 25 20 15 400LFM 200LFM 100LFM Nat Conv 10 5 0 0 0 10 20 30 40 50 60 Ambient Temperature (°C) 70 80 90 0 10 20 G003 Figure 9. Safe Operating Area – PCB Vertical Mount (1) 30 40 50 60 Ambient Temperature (°C) 70 80 90 G004 Figure 10. Safe Operating Area – PCB Horizontal Mount (1) 50 45 Output Current (A) 40 35 30 25 20 15 10 Typ SOA Min SOA 5 0 0 20 40 60 80 100 Board Temperature (ºC) 120 140 Figure 11. Typical and Min Safe Operating Area (1) 1. The Typical CSD97370AQ5M System Characteristic curves are based on measurements made on a PCB design with dimensions of 4.0" (W) x 3.5" (L) x 0.062" (T) and 6 copper layers of 1 oz. copper thickness. See the Application section for detailed explanation. 8 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com TYPICAL CHARACTERISTICS Test conditions: VIN = 12V, VDD = 5V, fSW= 500kHz, VOUT = 1.2V, LOUT = 0.3μH, DCR = 0.54mΩ, TJ = 125°C 1.6 17.0 14.2 1.5 14.2 1.4 11.4 1.4 11.3 1.3 8.5 1.3 8.5 1.2 5.7 1.2 5.7 1.1 2.8 1.1 2.8 1 0.0 1 0.0 −2.8 0.8 −5.7 0.7 −8.5 0.6 200 400 600 0.9 −2.8 0.8 −5.7 0.7 −8.5 0.6 −11.4 800 1000 1200 1400 1600 1800 2000 2200 Switching Frequency (kHz) 7 9 11 13 15 Input Voltage (V) 17 19 21 23 −11.3 22.7 1.6 17 1.7 19.9 1.5 14.2 1.6 17 1.4 11.3 1.5 14.2 1.3 8.5 1.4 11.4 1.2 5.7 1.3 8.5 1.1 2.8 1.2 5.7 1.1 2.8 1.5 2 2.5 3 3.5 Output Voltage (V) 4 4.5 5 0 −2.8 0.8 −5.7 −2.8 0.7 −8.5 −5.7 5.5 0.6 0 1 1 0.9 0.9 0.8 0.5 Power Loss, Normalized 1.8 1 Figure 14. Normalized Power Loss vs Output Voltage 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Output Inductance (µH) 0.9 1 −11.3 1.1 Figure 15. Normalized Power Loss vs Output Inductance 70 20 65 19 60 18 55 Driver Current (mA) Driver Current (mA) 5 Figure 13. Normalized Power Loss vs Input Voltage SOA Temperature Adj (ºC) Power Loss, Normalized Figure 12. Normalized Power Loss vs Frequency 3 SOA Temperature Adj (ºC) 0.9 SOA Temperature Adj (ºC) 17.1 1.5 Power Loss, Normalized 1.6 SOA Temperature Adj (ºC) Power Loss, Normalized spacer 50 45 40 35 30 17 16 15 14 13 25 12 20 15 11 10 200 10 -50 400 600 800 1000 1200 1400 1600 1800 2000 Switching Frequency (kHz) G030 Figure 16. Driver Current vs Frequency -25 0 25 50 75 100 Junction Temperature ( °C) 125 150 G031 Figure 17. Driver Current vs Temperature Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M 9 CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com APPLICATION INFORMATION The Power Stage CSD97370AQ5M is a highly optimized design for synchronous buck applications using NexFET devices with a 5V gate drive. The Control FET and Sync FET silicon are parametrically tuned to yield the lowest power loss and highest system efficiency. As a result, a rating method is used that is tailored towards a more systems centric environment. The high-performance gate driver IC integrated in the package helps minimize the parasitics and results in extremely fast switching of the power MOSFETs. System level performance curves such as Power Loss, Safe Operating Area and normalized graphs allow engineers to predict the product performance in the actual application. Power Loss Curves MOSFET centric parameters such as RDS(ON) and Qgd are primarily needed by engineers to estimate the loss generated by the devices. In an effort to simplify the design process for engineers, Texas Instruments has provided measured power loss performance curves. Figure 7 plots the power loss of the CSD97370AQ5M as a function of load current. This curve is measured by configuring and running the CSD97370AQ5M as it would be in the final application (see Figure 18). The measured power loss is the CSD97370AQ5M device power loss which consists of both input conversion loss and gate drive loss. Equation 1 is used to generate the power loss curve. Power Loss = (VIN x IIN) + (VDD x IDD) – (VSW_AVG x IOUT) (1) The power loss curve in Figure 7 is measured at the maximum recommended junction temperature of TJ = 125°C under isothermal test conditions. Safe Operating Curves (SOA) The SOA curves in the CSD97370AQ5M datasheet give engineers guidance on the temperature boundaries within an operating system by incorporating the thermal resistance and system power loss. Figure 9, Figure 10, and Figure 11 outline the temperature and airflow conditions required for a given load current. The area under the curve dictates the safe operating area. All the curves are based on measurements made on a PCB design with dimensions of 4.0" (W) x 3.5" (L) x 0.062" (T) and 6 copper layers of 1 oz. copper thickness. Normalized Curves The normalized curves in the CSD97370AQ5M data sheet give engineers guidance on the Power Loss and SOA adjustments based on their application specific needs. These curves show how the power loss and SOA boundaries will adjust for a given set of systems conditions. The primary Y-axis is the normalized change in power loss and the secondary Y-axis is the change is system temperature required in order to comply with the SOA curve. The change in power loss is a multiplier for the Power Loss curve and the change in temperature is subtracted from the SOA curve. 10 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com Figure 18. Power Loss Test Circuit Calculating Power Loss and SOA The user can estimate product loss and SOA boundaries by arithmetic means (see the Design Example). Though the Power Loss and SOA curves in this datasheet are taken for a specific set of test conditions, the following procedure will outline the steps engineers should take to predict product performance for any set of system conditions. Design Example Operating Conditions: Output Current (lOUT) = 25A, Input Voltage (VIN ) = 7V, Output Voltage (VOUT) = 1V, Switching Frequency (fSW) = 800kHz, Output Inductor (LOUT) = 0.2µH Calculating Power Loss • • • • • • Typical Power Loss at 25A = 3.5W (Figure 7) Normalized Power Loss for switching frequency ≈ 1.08 (Figure 12) Normalized Power Loss for input voltage ≈ 1.05 (Figure 13) Normalized Power Loss for output voltage ≈ 0.7 (Figure 14) Normalized Power Loss for output inductor ≈ 1.04 (Figure 15) Final calculated Power Loss = 3.5W × 1.08 × 1.05 × 0.7 × 1.04 ≈ 2.89W Calculating SOA Adjustments • • • • SOA SOA SOA SOA adjustment for switching frequency ≈ 2.6°C (Figure 12) adjustment for input voltage ≈ 1.4°C (Figure 13) adjustment for output voltage ≈ –1.0°C (Figure 14) adjustment for output inductor ≈ 1.3°C (Figure 15) Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M 11 CSD97370AQ5M SLPS352 – SEPTEMBER 2011 • www.ti.com Final calculated SOA adjustment = 2.6 + 1.4 + (–1.0) + 1.3 ≈ 4.3°C 50 45 Output Current (A) 40 35 30 1 25 20 2 15 10 5 0 3 0 20 40 60 80 100 Board Temperature (°C) 120 140 Figure 19. Power Stage CSD97370AQ5M SOA In the design example above, the estimated power loss of the CSD97370AQ5M would increase to 2.89W. In addition, the maximum allowable board and/or ambient temperature would have to decrease by 4.3°C. Figure 19 graphically shows how the SOA curve would be adjusted accordingly. 1. Start by drawing a horizontal line from the application current to the SOA curve. 2. Draw a vertical line from the SOA curve intercept down to the board/ambient temperature. 3. Adjust the SOA board/ambient temperature by subtracting the temperature adjustment value. In the design example, the SOA temperature adjustment yields a reduction in allowable board/ambient temperature of 4.3°C. In the event the adjustment value is a negative number, subtracting the negative number would yield an increase in allowable board/ambient temperature. RECOMMENDED PCB DESIGN OVERVIEW There are two key system-level parameters that can be addressed with a proper PCB design: electrical and thermal performance. Properly optimizing the PCB layout will yield maximum performance in both areas. Below is a brief description on how to address each parameter. Electrical Performance The CSD97370AQ5M has the ability to switch at voltages rates greater than 10kV/µs. Special care must be then taken with the PCB layout design and placement of the input capacitors, inductor and output capacitors. • The placement of the input capacitors relative to VIN and PGND pins of CSD97370AQ5M device should have the highest priority during the component placement routine. It is critical to minimize these node lengths. As such, ceramic input capacitors need to be placed as close as possible to the VIN and PGND pins (see Figure 20). The example in Figure 20 uses 6 x 10µF 1206 25V ceramic capacitors (TDK Part # C3216X5R1C106KT or equivalent). Notice there are ceramic capacitors on both sides of the board with an appropriate amount of vias interconnecting both layers. In terms of priority of placement next to the Power Stage C5, C8 and C7, C19 should follow in order. • The bootstrap cap CBOOT 0.1µF 0603 16V ceramic capacitor should be closely connected between BOOT and BOOT_R pins • The switching node of the output inductor should be placed relatively close to the Power Stage CSD97370AQ5M VSW pins. Minimizing the VSW node length between these two components will reduce the PCB conduction losses and actually reduce the switching noise level. (1) (1) 12 Keong W. Kam, David Pommerenke, “EMI Analysis Methods for Synchronous Buck Converter EMI Root Cause Analysis”, University of Missouri – Rolla Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com Thermal Performance The CSD97370AQ5M has the ability to use the GND planes as the primary thermal path. As such, the use of thermal vias is an effective way to pull away heat from the device and into the system board. Concerns of solder voids and manufacturability problems can be addressed by the use of three basic tactics to minimize the amount of solder attach that will wick down the via barrel: • Intentionally space out the vias from each other to avoid a cluster of holes in a given area. • Use the smallest drill size allowed in your design. The example in Figure 20 uses vias with a 10 mil drill hole and a 16 mil capture pad. • Tent the opposite side of the via with solder-mask. In the end, the number and drill size of the thermal vias should align with the end user’s PCB design rules and manufacturing capabilities. Figure 20. Recommended PCB Layout (Top Down View) Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M 13 CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com MECHANICAL DATA h q c2 c A L E2 c1 11 12 11 q 12 E1 K b E 23 D2 D1 1 1 22 q A1 Top View 22 e 0.3 x 45 Side View L Bottom View Note: Exposed tie clips may vary c E1 M0201-01 DIM MILLIMETERS Min INCHES Max Min Nom Max A 1.400 1.45 1.50 0.057 0.059 0.061 A1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.200 0.250 0.320 0.008 0.010 0.013 c 0.150 0.200 0.250 0.006 0.008 0.010 c1 0.150 0.200 0.250 0.006 0.008 0.010 c2 0.200 0.250 0.300 0.008 0.010 0.012 D1 5.900 6.000 6.100 0.232 0.236 0.240 D2 5.379 5.479 5.579 0.212 0.216 0.220 E 5.900 6.000 6.100 0.232 0.236 0.240 E1 4.900 5.000 5.100 0.193 0.197 0.201 E2 3.140 3.240 3.340 0.124 0.128 0.132 e h 0.500 TYP 1.150 K 14 Nom 1.250 0.020 TYP 1.350 0.045 0.380 TYP 0.049 0.053 0.015 TYP L 0.400 0.500 0.600 0.016 0.020 0.024 θ 0.00 — — 0.00 — — Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M CSD97370AQ5M SLPS352 – SEPTEMBER 2011 www.ti.com Land Pattern Recommendation 0.331 (0.013) 0.370 (0.015) 1.000 (0.039) 12 11 0.410 (0.016) 6.300 (0.248) 0.300 (0.012) 5.300 (0.209) 5.639 (0.222) 1 22 0.500 (0.020) 3.400 (0.134) 5.900 (0.232) M0202-01 NOTE: Dimensions are in mm (inches). spacer spacer spacer spacer spacer Stencil Recommendation 0.250 (0.010) 0.311 (0.012) 11 0.250 (0.010) 0.300 (0.012) 12 0.850 (0.033) 0.500 (0.020) 1.145 (0.045) 5.250 (0.207) 1 0.250 (0.010) 22 0.300 (0.012) 0.600 (0.024) 0.750 (0.030) 0.300 (0.012) 1.400 (0.055) 5.700 (0.224) M0204-01 NOTE: Dimensions are in mm (inches). Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s) :CSD97370AQ5M 15 PACKAGE OPTION ADDENDUM www.ti.com 17-Oct-2011 PACKAGING INFORMATION Orderable Device CSD97370AQ5M Status (1) ACTIVE Package Type Package Drawing SON DQP Pins Package Qty 22 2500 Eco Plan (2) Pb-Free (RoHS Exempt) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) CU NIPDAU Level-2-260C-1 YEAR (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 17-Oct-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD97370AQ5M Package Package Pins Type Drawing SON DQP 22 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 5.3 B0 (mm) K0 (mm) P1 (mm) 6.3 1.8 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 17-Oct-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD97370AQ5M SON DQP 22 2500 346.0 346.0 29.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. 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