HTSEMI RB717F

RB717F
SOT-323
SCHOTTKY BARRIER DIODE
FEATURES:
Low VF, Low VR
High reliability
MARKING:
3E·
Maximum Ratings @TA=25 ℃
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
40
V
Peak forward surge current
IFSM
200
mA
Average forward current
IO
30
mA
Power dissipation
PD
200
mW
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40-125
℃
Parameter
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Reverse voltage leakage current
IR
Forward voltage
Capacitance between terminals
Test
unless
conditions
otherwise
MIN
specified)
TYP
MAX
UNIT
VR=10V
1
μA
VF
IF=1mA
0.37
V
CT
VR=1V, f=1MHz
2.0
pF
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
RB717F
Typical characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05