RB717F SOT-323 SCHOTTKY BARRIER DIODE FEATURES: Low VF, Low VR High reliability MARKING: 3E· Maximum Ratings @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 40 V Peak forward surge current IFSM 200 mA Average forward current IO 30 mA Power dissipation PD 200 mW Junction temperature Tj 125 ℃ Storage temperature Tstg -40-125 ℃ Parameter ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Reverse voltage leakage current IR Forward voltage Capacitance between terminals Test unless conditions otherwise MIN specified) TYP MAX UNIT VR=10V 1 μA VF IF=1mA 0.37 V CT VR=1V, f=1MHz 2.0 pF １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ RB717F Typical characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５