HTSEMI RB461F

RB461F
SCHOTTKY DIODE
SOT-323
1. ANODE
2. N,C
FEATURES
z
Low-power rectification
z
For switching power supply
z
Ultra low VF.(VF=0.45V Typ. at 0.7A)
z
IF=0.7A guaranteed despite the size.
3. CATHODE
-
+
MARKING: 3B·
Maximum Ratings @TA=25℃
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
25
V
DC Blocking Voltage
VR
20
V
Average Rectified Output Current
IO
700
mA
Power Dissipation
PD
150
mW
Junction temperature
TJ
125
℃
TSTG
-40 to+125
℃
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
voltage
leakage current
Symbol
Test
conditions
MIN
MAX
UNIT
V(BR)
IR= 200μA
IR
VR=20V
200
μA
IF=700mA
0.49
V
VF
20
V
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
RB461F
Typical characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05