HTSEMI RB480K

RB480K
SOT-353
SCHOTTLKY BARRIER DIODE
FEATURES
Low current rectification
z
z
High reliability
MARKING: 3T
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
45
V
DC reverse
VR
40
V
Peak forward current
IFM
1
A
Mean rectifying current
IO
0.1
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40~+125
℃
Electrical Ratings @TA=25℃
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
CT
Min.
Typ.
Max.
450
600
1
5
25
6
Unit
mV
µA
pF
Conditions
IF=10mA
IF=100mA
VR=10V
VR=40V
VR=0V
VR=10V,f=1MHz
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
RB480K
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05