RB480K Diodes Shottky barrier diode RB480K zExternal dimensions (Unit : mm) 0.15±0.05 0.05 (3) 0.6 0.7 2.0±0.2 各リードとも Each lead has same dimension 同寸法 0.25± 0.1 zFeatures 1) Ultra small mold type. (UMD4) 2) Low IR. 3) High reliability. zLand size figure (Unit : mm) 0.9MIN. (2) 2.1±0.1 1.25±0.1 0.05 1.6 zApplications Low current rectification 0～0.1 (1) 0.65 1.3 0.1Min (4) 0.65 UMD4 0.7 1.3±0.1 0.9±0.1 zConstruction Silicon epitaxial planar zStructure ROHM : UMD4 JEDEC : SOT-343 JEITA : SC-82 dot (year week factory) 1Pin Mark zTaping dimensions (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature φ1.1±0.1 4.0±0.1 2.2±0.1 Limits 45 40 100 1 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg 2.4±0.1 8.0±0.2 0～0.5 5.5±0.2 2.45±0.1 2.4±0.1 3.5±0.05 1.75±0.1 4.0±0.1 1.15±0.1 Unit V V mA A ℃ ℃ (*1) Rating of per diode zElectrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 IR 1 Reverse current IR 2 Capacitance between terminals Ct1 Min. - Typ. 6 Max. 0.45 0.6 1 5 - Unit V V µA µA pF Ct2 - - 25 pF Conditions IF=10mA IF=100mA VR=10V VR=40V VR=10V , f=1MHz VR=0V Rev.B 1/3 RB480K Diodes zElectrical characteristic curves (Ta=25°C) 1000 100 100 Ta=125℃ Ta=75℃ Ta=25℃ 1 Ta=-25℃ 0.1 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=125℃ Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.01 1 0.001 0 100 200 300 400 500 600 700 800 10 0 10 20 30 0 40 10 20 30 VR(V) FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 500 490 480 470 900 800 700 600 500 400 300 AVE:88.62nA 200 AVE:480.8mV 8 6 4 0 AVE:5.81pF Ct DISPERSION MAP 8.3ms 10 5 AVE:5.5A 15 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 10 5 Ifsm 0.1 5 1 10 0.1 100 0.1 Per chip FORWARD POWER DISSIPATION:Pf(W) IF=100mA 100 Per chip 0.08 Mounted on epoxy board 10 0.003 Rth(j-a) Rth(j-c) 1 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 1000 t 10 0 0 0 DC D=1/2 0.06 Sin(θ＝180) 0.04 REVERSE POWER DISSIPATION:PR (W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 15 1ms 10 2 15 10 12 IR DISPERSION MAP 20 IM=10mA 14 0 VF DISPERSION MAP 100 16 100 460 Ta=25℃ f=1MHz VR=10V n=10pcs 18 Ta=25℃ VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 20 1000 510 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0.002 DC 0.001 D=1/2 Sin(θ＝180) 0.02 time 300us 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB480K Diodes 0.3 Per chip 0.2 0A 0V Io t DC T 0.15 VR D=t/T VR=20V Tj=125℃ Per chip 0.25 0.1 Sin(θ＝180) Io 0A 0V t DC 0.2 0.15 D=1/2 0.05 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0.25 VR D=t/T VR=20V T Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0.05 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1