ONSEMI NTTFS4932N

NTTFS4932N
Power MOSFET
30 V, 79 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
Applications
•
•
•
•
4.0 mW @ 10 V
30 V
Low−Side DC−DC Converters
Power Load Switch
Notebook Battery Management
Motor Control
N−Channel MOSFET
Parameter
D (5−8)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
18
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.2
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
25.5
A
Continuous Drain
Current RqJA (Note 2)
79 A
5.5 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Power Dissipation
RqJA ≤ 10 s (Note 1)
ID MAX
TA = 85°C
G (4)
S (1,2,3)
13
MARKING DIAGRAM
TA = 85°C
Steady
State
18.5
TA = 25°C
PD
TA = 25°C
ID
TA = 85°C
4.5
W
11
A
8.0
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4932
A
Y
WW
G
4932
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.85
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
79
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
43
W
TA = 25°C, tp = 10 ms
IDM
235
A
TA = 25°C
IDmaxPkg
75
A
Device
TJ,
Tstg
−55 to
+150
°C
NTTFS4932NTAG
WDFN8 1500/Tape & Reel
(Pb−Free)
IS
39
A
NTTFS4932NTWG
dV/dt
6.0
V/ns
WDFN8 5000/Tape & Reel
(Pb−Free)
EAS
92.4
mJ
TL
260
°C
Pulsed Drain Current
TC = 85°C
Current Limited by Pkg.
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 43 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
57
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
Publication Order Number:
NTTFS4932N/D
NTTFS4932N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
2.9
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
56.5
Junction−to−Ambient – Steady State (Note 4)
RqJA
147.6
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
27.5
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
14
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
gFS
1.6
4.5
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
ID = 20 A
2.5
ID = 10 A
2.5
ID = 20 A
3.6
ID = 10 A
3.6
VDS = 1.5 V, ID = 15 A
mV/°C
4.0
mW
5.5
46
S
3111
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
42
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
1064
nC
4.9
8.9
3.3
VGS = 10 V, VDS = 15 V, ID = 20 A
46.5
nC
15.5
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
22.6
29
4.8
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4932N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
11
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
21.5
35.6
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.8
TJ = 125°C
0.7
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.1
ns
40
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
V
21
19
QRR
37.5
nC
Source Inductance
LS
0.38
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.054
1.3
1.1
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.0
W
NTTFS4932N
TYPICAL CHARACTERISTICS
140
VGS = 4.2 V to 7 V TJ = 25°C
4.0 V
3.8 V
120
3.6 V
100
3.4 V
80
3.2 V
60
3.0 V
40
2.8 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
2.6 V
20
0
120
ID, DRAIN CURRENT (A)
10 V
2.4 V
0
1
2
3
4
100
80
60
TJ = 25°C
40
20
TJ = 125°C
TJ = −55°C
0
1.0
5
1.5
2.0
2.5
3.0
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.007
ID = 20 A
TJ = 25°C
0.006
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
160
0.006
TJ = 25°C
0.0055
0.005
0.0045
0.005
0.004
4.0
VGS = 4.5 V
0.004
0.0035
0.003
0.003
VGS = 10 V
0.0025
0.002
2
3
4
5
6
7
8
9
VGS (V)
10
0.002
20
40 50
60
70
80 90 100 110 120 130 140
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
1.7 ID = 20 A
1.6 VGS = 10 V
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50
−25
0
30
VGS = 0 V
IDSS, LEAKAGE (nA)
TJ = 150°C
1000
25
50
75
100
125
150
TJ = 125°C
100
10
TJ = 85°C
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4932N
3800
3600
3400
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL CHARACTERISTICS
Ciss
VGS = 0 V
TJ = 25°C
Coss
Crss
0
5
10
15
20
25
30
7
6
5
4
Qgd
Qgs
3
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 20 A
2
1
0
0
4
8
12 16
20
24
28
32 36
40
44 48
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
td(off)
IS, SOURCE CURRENT (A)
t, TIME (ns)
8
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
tf
100
tr
td(on)
10
1
10
100
10
5
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1 ms
10 ms
VGS = 20 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100 ms
10
0.01
0.1
TJ = 125°C
15
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10 ms
0.1
20
RG, GATE RESISTANCE (W)
100
1
25
0
0.4
1000
ID, DRAIN CURRENT (A)
QT
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
100
100
ID = 43 A
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTTFS4932N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 13. Thermal Response
90
80
70
60
GFS (S)
R(t) (°C/W)
10
50
40
30
20
10
0
0
10
20
30
40
ID (A)
50
60
Figure 14. GFS vs. ID
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6
70
80
100
1000
NTTFS4932N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB−01
ISSUE B
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
0.20 C
8 7 6 5
4X
E1 E
1 2 3 4
q
c
TOP VIEW
A1
0.10 C
A
0.10 C
e
SIDE VIEW
0.10
8X b
C A B
0.05
c
L
C
6X
DETAIL A
SEATING
PLANE
DETAIL A
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.026 BSC
0.012
0.016
0.025
−−−
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
−−−
0.022
0.008
0.063
12 _
SOLDERING FOOTPRINT*
8X
0.42
e/2
1
4
E2
0.65
PITCH
PACKAGE
OUTLINE
K
4X
0.66
M
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.65 BSC
0.30
0.41
0.51
0.64
−−−
−−−
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
5
D2
L1
3.60
BOTTOM VIEW
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NTTFS4932N/D