ONSEMI NTMFS4C06NT1G

NTMFS4C06N
Power MOSFET
30 V, 69 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free and are RoHS Compliant
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Applications
V(BR)DSS
• CPU Power Delivery
• DC−DC Converters
RDS(ON) MAX
4.0 mW @ 10 V
30 V
Parameter
Gate−to−Source Voltage
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
20.0
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.55
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
31.6
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
PD
6.4
W
TA = 25°C
ID
11
A
Continuous Drain
Current RqJA
(Note 2)
TA = 80°C
S (1,2,3)
TA = 80°C
Steady
State
TA = 80°C
0.77
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
69
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
30.5
W
TA = 25°C, tp = 10 ms
IDM
166
A
TC =80°C
TA = 25°C
52
IDmax
80
A
TJ,
TSTG
−55 to
+150
°C
IS
28
A
Drain to Source DV/DT
dV/dt
7.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL =37 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS
68
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 27 Apk, EAS = 36 mJ.
© Semiconductor Components Industries, LLC, 2013
MARKING
DIAGRAM
D
8.2
PD
Current Limited by Package
N−CHANNEL MOSFET
23.7
TA = 25°C
October, 2013 − Rev. 2
D (5−8)
G (4)
14.9
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
69 A
6.0 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Drain−to−Source Voltage
ID MAX
1
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4C06N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4C06NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C06NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4C06N/D
NTMFS4C06N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
4.1
Junction−to−Ambient – Steady State (Note 4)
RqJA
49
Junction−to−Ambient – Steady State (Note 5)
RqJA
162.3
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
19.5
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
14.4
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.1
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
3.8
mV/°C
VGS = 10 V
ID = 30 A
3.2
4.0
VGS = 4.5 V
ID = 25 A
4.8
6.0
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
58
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1683
VGS = 0 V, f = 1 MHz, VDS = 15 V
841
pF
40
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
11.6
Threshold Gate Charge
QG(TH)
2.6
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.0
Gate Plateau Voltage
VGP
3.1
V
26
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.023
4.7
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
10
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
32
18
5.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4C06N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
28
ns
24
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.8
TJ = 125°C
0.63
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
34
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
17
17
22
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
ns
nC
NTMFS4C06N
80
4.0 V
3.8 V
TJ = 25°C
70
ID, DRAIN CURRENT (A)
4.5 V to 10 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
VGS = 2.6 V
0
1
2
3
4
40
30
TJ = 25°C
20
TJ = 125°C
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
0.016
0.014
0.012
0.010
0.008
0.006
0.004
4
5
6
7
8
9
10
4.5
0.0060
0.0055
TJ = 25°C
VGS = 4.5 V
0.0050
0.0045
0.0040
VGS = 10 V
0.0035
0.0030
0.0025
0.0020
10
20
30
40
50
60
70
VGS, GATE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.018
3
60
0
5
0.020
0.002
VDS = 5 V
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1.6
1.5
2000
VGS = 10 V
ID = 30 A
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
Ciss
1800
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1600
1400
Coss
1200
1000
800
600
400
200
−25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 25°C
0
Crss
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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4
30
NTMFS4C06N
1000
10
VGS = 10 V
VDD = 15 V
ID = 15 A
QT
8
6
QGD
QGS
4
0
0
2
4
6
8
1
100
RG, GATE RESISTANCE (W)
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
1000
0 V < VGS < 10 V
VGS = 0 V
ID, DRAIN CURRENT (A)
16
14
TJ = 25°C
TJ = 125°C
12
10
8
6
4
0.4
0.5
0.6
0.7
0.8
0.9
100
10 ms
100 ms
10
1 ms
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.01
1.0
0.01
0.1
dc
1
10
100
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
36
ID = 27 A
32
28
24
20
16
12
8
4
0
10
QG, TOTAL GATE CHARGE (nC)
GFS (S)
IS, SOURCE CURRENT (A)
1
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
18
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
td(on)
10
10 12 14 16 18 20 22 24 26
20
2
0
tf
tr
VGS = 10 V
VDD = 15 V
ID = 30 A
TJ = 25°C
2
td(off)
100
t, TIME (ns)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
25
50
75
100
125
150
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15 20
25
30
35
40
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID (A)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
Figure 12. GFS vs. ID
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5
45 50
55
60
NTMFS4C06N
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
10
1
1.E−08 1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
PULSE WIDTH (sec)
Figure 13. Avalanche Characteristics
100
Duty Cycle = 0.5
R(t) (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
PULSE TIME (sec)
Figure 14. Thermal Response
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6
1
10
100
1000
NTMFS4C06N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
DETAIL A
b
0.10
C A B
0.05
c
1
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
3X
4X
1.270
0.750
4X
1.000
e/2
L
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
0.965
4
1.330
K
2X
0.905
2X
PIN 5
(EXPOSED PAD)
G
0.495
E2
L1
4.530
3.200
M
0.475
2X
D2
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTMFS4C06N/D