NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications V(BR)DSS • CPU Power Delivery • DC−DC Converters RDS(ON) MAX 4.0 mW @ 10 V 30 V Parameter Gate−to−Source Voltage Symbol Value Unit VDSS 30 V VGS ±20 V ID 20.0 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.55 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 31.6 A Power Dissipation RqJA ≤ 10 s (Note 1) TA = 25°C PD 6.4 W TA = 25°C ID 11 A Continuous Drain Current RqJA (Note 2) TA = 80°C S (1,2,3) TA = 80°C Steady State TA = 80°C 0.77 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 69 A Power Dissipation RqJC (Note 1) TC = 25°C PD 30.5 W TA = 25°C, tp = 10 ms IDM 166 A TC =80°C TA = 25°C 52 IDmax 80 A TJ, TSTG −55 to +150 °C IS 28 A Drain to Source DV/DT dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL =37 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) EAS 68 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Source Current (Body Diode) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. Parts are 100% tested at TJ = 25°C, VGS = 10 V, IL = 27 Apk, EAS = 36 mJ. © Semiconductor Components Industries, LLC, 2013 MARKING DIAGRAM D 8.2 PD Current Limited by Package N−CHANNEL MOSFET 23.7 TA = 25°C October, 2013 − Rev. 2 D (5−8) G (4) 14.9 Power Dissipation RqJA (Note 2) Pulsed Drain Current 69 A 6.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Drain−to−Source Voltage ID MAX 1 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4C06N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceabililty ORDERING INFORMATION Device Package Shipping† NTMFS4C06NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C06NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4C06N/D NTMFS4C06N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 4.1 Junction−to−Ambient – Steady State (Note 4) RqJA 49 Junction−to−Ambient – Steady State (Note 5) RqJA 162.3 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 19.5 Unit °C/W 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 12.6 A, Tcase = 25°C, ttransient = 100 ns 34 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V V 14.4 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.1 V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 3.8 mV/°C VGS = 10 V ID = 30 A 3.2 4.0 VGS = 4.5 V ID = 25 A 4.8 6.0 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 58 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 1683 VGS = 0 V, f = 1 MHz, VDS = 15 V 841 pF 40 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 11.6 Threshold Gate Charge QG(TH) 2.6 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 4.0 Gate Plateau Voltage VGP 3.1 V 26 nC Total Gate Charge VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 30 A QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 0.023 4.7 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 10 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 32 18 5.0 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4C06N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 8.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 28 ns 24 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.63 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 17 17 22 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 ns nC NTMFS4C06N 80 4.0 V 3.8 V TJ = 25°C 70 ID, DRAIN CURRENT (A) 4.5 V to 10 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V VGS = 2.6 V 0 1 2 3 4 40 30 TJ = 25°C 20 TJ = 125°C TJ = −55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 30 A 0.016 0.014 0.012 0.010 0.008 0.006 0.004 4 5 6 7 8 9 10 4.5 0.0060 0.0055 TJ = 25°C VGS = 4.5 V 0.0050 0.0045 0.0040 VGS = 10 V 0.0035 0.0030 0.0025 0.0020 10 20 30 40 50 60 70 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.7 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE (W) 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.018 3 60 0 5 0.020 0.002 VDS = 5 V 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 1.6 1.5 2000 VGS = 10 V ID = 30 A 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 Ciss 1800 C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TYPICAL CHARACTERISTICS 1600 1400 Coss 1200 1000 800 600 400 200 −25 0 25 50 75 100 125 150 VGS = 0 V TJ = 25°C 0 Crss 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 4 30 NTMFS4C06N 1000 10 VGS = 10 V VDD = 15 V ID = 15 A QT 8 6 QGD QGS 4 0 0 2 4 6 8 1 100 RG, GATE RESISTANCE (W) Figure 8. Resistive Switching Time Variation vs. Gate Resistance 1000 0 V < VGS < 10 V VGS = 0 V ID, DRAIN CURRENT (A) 16 14 TJ = 25°C TJ = 125°C 12 10 8 6 4 0.4 0.5 0.6 0.7 0.8 0.9 100 10 ms 100 ms 10 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 1.0 0.01 0.1 dc 1 10 100 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Diode Forward Voltage vs. Current Figure 10. Maximum Rated Forward Biased Safe Operating Area 36 ID = 27 A 32 28 24 20 16 12 8 4 0 10 QG, TOTAL GATE CHARGE (nC) GFS (S) IS, SOURCE CURRENT (A) 1 Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 18 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) td(on) 10 10 12 14 16 18 20 22 24 26 20 2 0 tf tr VGS = 10 V VDD = 15 V ID = 30 A TJ = 25°C 2 td(off) 100 t, TIME (ns) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 25 50 75 100 125 150 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 40 TJ, STARTING JUNCTION TEMPERATURE (°C) ID (A) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature Figure 12. GFS vs. ID http://onsemi.com 5 45 50 55 60 NTMFS4C06N TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 10 1 1.E−08 1.E−07 1.E−06 1.E−05 1.E−04 1.E−03 PULSE WIDTH (sec) Figure 13. Avalanche Characteristics 100 Duty Cycle = 0.5 R(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 14. Thermal Response http://onsemi.com 6 1 10 100 1000 NTMFS4C06N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A 0.10 C SIDE VIEW 8X DETAIL A b 0.10 C A B 0.05 c 1 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ SOLDERING FOOTPRINT* STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 3X 4X 1.270 0.750 4X 1.000 e/2 L DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 0.965 4 1.330 K 2X 0.905 2X PIN 5 (EXPOSED PAD) G 0.495 E2 L1 4.530 3.200 M 0.475 2X D2 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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