NTMFS4931N Power MOSFET 30 V, 246 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control • Refer to Application Note AND8195/D for Mounting Information V(BR)DSS RDS(ON) MAX ID MAX 1.1 mW @ 10 V 30 V 246 A 1.5 mW @ 4.5 V End Products • Motor Control, UPS, Fault−Tolerant Power Systems, Hot Swap D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 40 A Parameter TA = 25°C Continuous Drain Current RqJA (Note 1) TA = 100°C TA = 25°C PD 2.74 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 77 A Continuous Drain Current RqJA (Note 2) TA = 100°C TA = 25°C Steady State PD W 1 TA = 25°C ID 23 A 15 TA = 25°C PD 0.95 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 246 A TC =100°C 156 TC = 25°C PD 104 W TA = 25°C, tp = 10 ms IDM 490 A TJ, TSTG −55 to +150 °C IS 100 A Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT dV/dt 4.4 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 41 Apk, L = 0.3 mH, RG = 25 W) EAS 252 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 0 MARKING DIAGRAM D 10.2 Power Dissipation RqJA (Note 2) Pulsed Drain Current N−CHANNEL MOSFET 48 TA = 100°C Power Dissipation RqJC (Note 1) S (1,2,3) 25 Power Dissipation RqJA (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) G (4) 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 S S S G 4931N AYWWG G D D D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NTMFS4931NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4931NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4931N/D NTMFS4931N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.2 Junction−to−Ambient – Steady State (Note 3) RqJA 45.7 Junction−to−Ambient – Steady State (Note 4) RqJA 132 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 12.3 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 18 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 15 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.6 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 0.85 ID = 15 A 0.82 ID = 30 A 1.2 ID = 15 A 1.2 VDS = 1.5 V, ID = 15 A 86 mV/°C 1.1 1.5 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 9821 VGS = 0 V, f = 1 MHz, VDS = 15 V 2720 CRSS 234 Total Gate Charge QG(TOT) 61.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge VGS = 4.5 V, VDS = 15 V; ID = 30 A 14.2 25.2 pF nC 15.9 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 128 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 27 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 29 36 24 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4931N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 15 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 17 ns 80 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.62 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.0 V 64 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 33 ns 31 QRR 100 nC Source Inductance LS 0.50 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.7 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 1.8 W NTMFS4931N TYPICAL CHARACTERISTICS 220 220 VGS = 3.4 V ID, DRAIN CURRENT (A) 180 160 VGS = 3 V 140 VGS = 3.8 V to 10 V 120 100 VGS = 2.8 V 80 60 40 20 0 VGS = 2.6 V VGS = 2.2 V 0 VDS = 10 V 200 VGS = 3.2 V 180 ID, DRAIN CURRENT (A) 200 160 140 120 80 TJ = 25°C 60 40 20 VGS = 2.4 V 1 2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 125°C 100 0 4 TJ = −55°C 1 1.5 2 2.5 3 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 12 11 10 9 8 7 6 5 4 3 2 1 0 2.0 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.0018 0.0017 TJ = 25°C VGS = 4.5 V 0.0016 0.0015 0.0014 0.0013 0.0012 0.0011 0.001 VGS = 10 V 0.0009 0.0008 0.0007 0.0006 0.0005 30 40 50 60 70 80 90 100 110 120 130 140 150 160 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.4 100000 VGS = 0 V ID = 30 A VGS = 10 V TJ = 150°C 10000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.5 4 1.3 1.2 1.1 1 0.9 0.8 TJ = 125°C 1000 TJ = 85°C 100 0.7 0.6 −50 −25 0 25 50 75 100 125 150 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4931N 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V Ciss Coss Crss 0 5 10 15 20 25 30 10 8 7 6 5 4 QGD QGS 3 2 VDD = 15 V VGS = 10 V ID = 30 A 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 10000 30 VDD = 15 V ID = 15 A VGS = 10 V VGS = 0 V ID, DRAIN CURRENT (A) t, TIME (ns) 1000 td(off) tf tr 100 td(on) 10 1 1 10 100 25 20 TJ = 125°C 15 TJ = 25°C 10 5 0 0.3 0.1 0.01 0.01 100 ms 1 ms 0 V < VGS < 10 V SINGLE PULSE TC = 25°C 10 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 10 ms 100 1 0.5 0.6 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage vs. Current 1000 10 0.4 VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation vs. Gate Resistance ID, DRAIN CURRENT (A) QT TJ = 25°C 9 100 260 240 220 200 180 160 140 120 100 80 60 40 20 0 ID = 41 A 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4931N TYPICAL CHARACTERISTICS 100 D = 0.5 0.2 10 0.1 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response GFS (S) r(t) (°C/W) 0.05 0.02 260.00 240.00 220.00 200.00 180.00 160.00 140.00 120.00 100.00 80.00 60.00 40.00 20.00 0.00 0 10 20 30 40 50 ID (A) 60 70 Figure 14. GFS vs. ID http://onsemi.com 6 80 90 100 100 1000 NTMFS4931N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO8 FL) CASE 488AA ISSUE E 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A 0.10 C DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q SOLDERING FOOTPRINT* SIDE VIEW DETAIL A 3X 4X 1.270 8X MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 0.51 −−− −−− 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 0.750 b 0.10 C A B 0.05 c e/2 L 1 4 K 4X 1.000 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 0.965 1.330 2X 0.905 2X PIN 5 (EXPOSED PAD) G 0.495 E2 L1 M 4.530 3.200 0.475 2X D2 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4931N/D