DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance • 30mΩ @ VGS = 10V • 40mΩ @ VGS = 4.5V • 63mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) • • • • • • SO-8 S D S D S D G D TOP VIEW Internal Schematic TOP VIEW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State Units V V IDM Value 30 ±12 7.1 5.7 28 Symbol PD RθJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±80 ±800 V μA 0.62 0.9 1.2 V RDS (ON) ⎯ 24 30 50 30 40 63 mΩ gfs VSD ⎯ ⎯ 10 0.78 ⎯ 1.16 S V Ciss Coss Crss ⎯ ⎯ ⎯ 555 109 82 ⎯ ⎯ ⎯ pF pF pF IGSS VGS(th) nA Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±19V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 7.1A VGS = 4.5V, ID = 6.4A VGS = 2.5V, ID = 5.0A VDS = 5V, ID = 5.1A VGS = 0V, IS = 2.1A VDS = 5V, VGS = 0V f = 1.0MHz Device mounted on 2 oz copper pad layout with RθJA = 50°C/W. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN3052LSS Document number: DS31583 Rev. 3 - 2 1 of 5 www.diodes.com September 2009 © Diodes Incorporated DMN3052LSS 24 24 VGS = 10V VGS = 4.5V T A = -55°C TA = 25°C T A = 85°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 3.0V 20 VDS = 5V Pulsed 16 VGS = 2.5V 12 8 VGS = 2.0V 4 TA = 125°C 16 TA = 150°C 12 8 4 0 VGS = 1.5V 0 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0.5 0.06 1 1.5 2 2.5 3 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.5 0.06 0.05 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 4.5V VGS = 2.5V 0.04 0.03 VGS = 4.5V VGS = 10V 0.02 0.01 0.05 T A = 125°C 0.04 T A = 85°C 0.03 T A = 25°C 0.02 T A = -55°C 0.01 0 0 0 4 8 12 16 20 24 ID, DRAIN-SOURCE CURRENT (A) Fig. 4 On-Resistance vs. Drain Current & Temperature 0 4 8 12 16 20 24 ID, DRAIN-SOURCE CURRENT (A) Fig 3 On-Resistance vs. Drain Current & Gate Voltage 1.2 1.5 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.7 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 150°C VGS = 10V ID = 10A 1.3 VGS = 4.5V ID = 5A 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Static Drain-Source On-Resistance vs. Ambient Temperature DMN3052LSS Document number: DS31583 Rev. 3 - 2 2 of 5 www.diodes.com 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature September 2009 © Diodes Incorporated DMN3052LSS 1,000 24 TA = 25°C 800 C, CAPACITANCE (pF) IS, SOURCE CURRENT (A) f = 1MHz 900 20 16 12 8 700 600 500 Ciss 400 300 200 4 Coss 100 Crss 0 0 0 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 24 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 96°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 Ordering Information (Note 6) Part Number DMN3052LSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo N3052LS Part no. YY WW 1 DMN3052LSS Document number: DS31583 Rev. 3 - 2 4 3 of 5 www.diodes.com Xth week: 01~52 Year: "07" =2007 "08" =2008 September 2009 © Diodes Incorporated DMN3052LSS 0.254 Package Outline Dimensions E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN3052LSS Document number: DS31583 Rev. 3 - 2 4 of 5 www.diodes.com September 2009 © Diodes Incorporated DMN3052LSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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