DMN3052L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS(ON) < 32mΩ @ VGS = 10V RDS(ON) < 42mΩ @ VGS = 4.5V RDS(ON) < 64mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) • • • • • • SOT-23 Drain D Gate Source TOP VIEW Maximum Ratings Equivalent Circuit S G TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed ID IDM IS Value 30 ±12 5.4 4.6 19 2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Notes: Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3052L Document number: DS31406 Rev. 4 - 2 1 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN3052L Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V μA IGSS ⎯ ⎯ ⎯ 1 ±80 ±800 VGS(th) 0.62 1.2 32 42 64 100 V ⎯ 1.2 S V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF VDS = 5V, VGS = 0V f = 1.0MHz nC VGS = 4.5V, VDS = 15V, ID = 5.8A |Yfs| VSD ⎯ ⎯ 0.9 26 33 52 78 8 0.75 Ciss Coss Crss Qg Qgs Qgd ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 555 109 82 6.3 1.3 1.7 RDS (ON) Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes: Symbol ⎯ ⎯ ⎯ ⎯ nA mΩ Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±19V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 3.8A VGS = 2.0V, ID = 2.0A VDS = 5V, ID = 3.1A VGS = 0V, IS = 2.0A 4. Short duration pulse test used to minimize self-heating effect. 20 20 VDS = 5V Pulsed VGS = 10V ID, DRAIN CURRENT (A) VGS = 3.0V TA = 85°C 16 ID, DRAIN CURRENT (A) VGS = 4.0V 16 VGS = 2.5V 12 8 VGS = 2.0V 4 T A = -55°C TA = 25°C TA = 125°C TA = 150°C 12 8 4 VGS = 1.5V 0 0 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMN3052L Document number: DS31406 Rev. 4 - 2 2 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4 July 2009 © Diodes Incorporated DMN3052L 0.08 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V VGS = 4.5V 0.06 TA = 125°C TA = 85°C 0.04 TA = 25°C TA = -55°C 0.02 0.01 0 0 4 8 12 16 20 ID, DRAIN-SOURCE CURRENT (A) Fig 3 On-Resistance vs. Drain Current & Gate Voltage 4 8 12 16 20 ID, DRAIN-SOURCE CURRENT (A) Fig. 4 On-Resistance vs. Drain Current & Temperature 0 1.6 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 150°C VGS = 10V ID = 10A 1.4 VGS = 4.5V ID = 5A 1.2 1.0 0.8 0.6 -50 1.4 1.2 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Static Drain-Source On-Resistance vs. Ambient Temperature 1,000 20 T A = 25°C f = 1MHz Ciss C, CAPACITANCE (pF) IS, SOURCE CURRENT (A) 16 12 8 100 Coss Crss 4 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMN3052L Document number: DS31406 Rev. 4 - 2 3 of 6 www.diodes.com 10 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 25 July 2009 © Diodes Incorporated DMN3052L VGS, GATE-SOURCE VOLTAGE (V) 10 8 6 ID = 5.8A 4 2 0 0 2 4 6 8 10 12 QG, TOTAL GATE CHARGE (nC) Fig. 9 Total Gate Charge 14 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 169°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 Ordering Information 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (S) Fig. 10 Transient Thermal Resistance 10 100 1,000 (Note 5) Part Number DMN3052L-7 Notes: t1 Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. MN5 Date Code Key Year Code Month Code 2008 V Jan 1 DMN3052L Document number: DS31406 Rev. 4 - 2 2009 W Feb 2 Mar 3 YM Marking Information MN5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D July 2009 © Diodes Incorporated DMN3052L Package Outline Dimensions A B C H K M K1 D F J L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DMN3052L Document number: DS31406 Rev. 4 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com July 2009 © Diodes Incorporated DMN3052L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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