HTSEMI PT8205A

PT8205A
20V Dual N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), [email protected] 2.5V, [email protected] 5.2A = 38mΩ
RDS(ON), [email protected] 4.5V, [email protected] 6A = 28mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current handing capability
Ideal for Li ion battery pack applications
D1
S1
S1
G1
TSSOP-8
REF.
A
. A1
A2
Millimeter
Min.
Max.
1.20 MAX.
0.05
0.15
0.80
1.05
C
0.19
0.90
0.30
0.20
D
2.90
3.00
b
E
1
8
2
7
3
6
4
5
Millimeter
REF.
E1
Min.
Max.
4.30
4.50
0.65BSC
e
L
0.45
0.75
θ
0°
10°
6.40BSC
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
± 12
ID
6
IDM
20
Continuous Drain Current
Pulsed Drain Current
1)
TA = 25oC
Maximum Power Dissipation
o
TA = 75 C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
RθJA
Unit
V
A
1.6
W
1
o
-55 to 150
78
C
o
C/W
Notes
1) Pulse width limited by maximum junction temperature.
2) Surface Mounted on FR4 Board, t v 5 sec.
1 JinYu
semiconductor
S2
S2
G2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
D2
www.htsemi.com
Date:2011/05
PT8205A
20V Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min.
Typ.
20
-
Max.
Unit
Static
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250uA
Drain-Source On-State Resistance
RDS(on) VGS = 2.5V, ID = 5.2A
30.0
38
Drain-Source On-State Resistance
RDS(on) VGS = 4.5V, ID = 6A
21.0
28
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA
0.6
-
V
mΩ
1.5
V
Zero Gate Voltage Drain Current 0
IDSS
VDS = 20V, VGS = 0V
1
uA
Gate Body Leakage
IGSS
VGS = ± 8V, V DS = 0V
±100
nA
gfs
VDS = 5V, ID =6A
Forward Transconductance
22
S
Dynamic 1)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 10V, ID = 6A
VGS = 4.5V
5
nC
1.1
2.1
10
20
VDD = 10V, RG = 6Ω
11
25
ID = 1A, VGS= 4.5V
35
70
30
VDS = 8V, VGS = 0V
f = 1.0 MHz
ns
60
600
pF
330
140
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
IS
VSD
IS = 1.7A, VGS = 0V
0.72
1.7
A
1.2
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
PT8205A
20V Dual N-Channel Enhancement Mode MOSFET
3 JinYu
semiconductor
www.htsemi.com
Date:2011/05